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Integrated Ferroelectrics
An International Journal
Volume 140, 2012 - Issue 1
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Original Articles

Study of the Resistive Switching Characteristics and Mechanisms of Pt/CeOx/TiN Structure for RRAM Applications

Qigang Zhou Functional Materials Research Laboratory, Tongji University, Shanghai, 200092, China
&
Jiwei Zhai Functional Materials Research Laboratory, Tongji University, Shanghai, 200092, China
Pages 16-22 | Received 30 Jun 2012, Accepted 02 Oct 2012, Published online: 18 Dec 2012

Citations (7)

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Read on this site (1)

Peiyuan Guan, Yuandong Sun, Tao Wan, Xi Lin, Zhemi Xu & Dewei Chu. (2017) Development of ferroelectric oxides based resistive switching materials. Materials Science and Technology 33:17, pages 2010-2023.
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Articles from other publishers (6)

Hoesung Ha, Juyeong Pyo, Yunseok Lee & Sungjun Kim. (2022) Non-Volatile Memory and Synaptic Characteristics of TiN/CeOx/Pt RRAM Devices. Materials 15:24, pages 9087.
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Ruomeng Huang, Xingzhao Yan, Sheng Ye, Reza Kashtiban, Richard Beanland, Katrina A. Morgan, Martin D. B. Charlton & C. H. de Groot. (2017) Compliance-Free ZrO2/ZrO2???x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour. Nanoscale Research Letters 12:1.
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Rafael Schmitt, Jonathan Spring, Roman Korobko & Jennifer L.M. Rupp. (2017) Design of Oxygen Vacancy Configuration for Memristive Systems. ACS Nano 11:9, pages 8881-8891.
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Muhammad Ismail, Chun-Yang Huang, Debashis Panda, Chung-Jung Hung, Tsung-Ling Tsai, Jheng-Hong Jieng, Chun-An Lin, Umesh Chand, Anwar Manzoor Rana, Ejaz Ahmed, Ijaz Talib, Muhammad Younus Nadeem & Tseung-Yuen Tseng. (2014) Forming-free bipolar resistive switching in nonstoichiometric ceria films. Nanoscale Research Letters 9:1.
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F. Pan, S. Gao, C. Chen, C. Song & F. Zeng. (2014) Recent progress in resistive random access memories: Materials, switching mechanisms, and performance. Materials Science and Engineering: R: Reports 83, pages 1-59.
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Muhammad Ismail, Ijaz Talib, Chun-Yang Huang, Chung-Jung Hung, Tsung-Ling Tsai, Jheng-Hong Jieng, Umesh Chand, Chun-An Lin, Ejaz Ahmed, Anwar Manzoor Rana, Muhammad Younus Nadeem & Tseung-Yuen Tseng. (2014) Resistive switching characteristics of Pt/CeO x /TiN memory device . Japanese Journal of Applied Physics 53:6, pages 060303.
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