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Integrated Ferroelectrics
An International Journal
Volume 10, 1995 - Issue 1-4
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Materials processing—CVD

Structure and properties of heteroepitaxial Pb(Zr0.35Ti0.65)O3/SrRuO3 multilayer thin films on SrTiO3 (100) prepared by MOCVD and RF sputtering

C. M. Foster Materials Science Division, Argonne National Laboratory, IL, Argonne, USA
,
R. Csencsits Materials Science Division, Argonne National Laboratory, IL, Argonne, USA
,
G. R. Bai Materials Science Division, Argonne National Laboratory, IL, Argonne, USA
,
Z. Li Materials Science Division, Argonne National Laboratory, IL, Argonne, USA
,
L. A. Wills Hewlett Packard Laboratories, Hewlett-Packard Company, Palo Alto, CA, USA
,
R. Hiskes Hewlett Packard Laboratories, Hewlett-Packard Company, Palo Alto, CA, USA
,
H. N. Al-Shareef Sandia National Laboratory, Albuquerque, NM, USA
&
D. Dimos Sandia National Laboratory, Albuquerque, NM, USA
 show all
Pages 31-38 | Received 20 Mar 1995, Published online: 19 Aug 2006

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M. Deschler, E. Woelk, D. Schmitz, G. Strauch & H. Jürgensen. (1997) Multiwafer MOCVD systems for ferroelectrics. Integrated Ferroelectrics 18:1-4, pages 119-125.
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J.F. Roeder, S.M. Bilodeau, R.J. Carl$suffix/text()$suffix/text(), R.A. Gardiner & P.C. Van Buskirk. (1997) MOCVD of advanced dielectric and ferroelectric films by liquid delivery. Integrated Ferroelectrics 18:1-4, pages 109-118.
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T. Hidaka, T. Maruyama, I. Sakai, M. Saitoh, L.A. Wills, R. Hiskes, S.A. Dicarolis, Jun Amano & C.M. Foster. (1997) Characteristics of PZT thin films as ultra-high density recording media. Integrated Ferroelectrics 17:1-4, pages 319-327.
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Articles from other publishers (13)

Xi Shi, Nitish Kumar & Mark Hoffman. (2020) Electrical fatigue in 0.94Na0.5Bi0.5TiO3–0.06BaTiO3: Influence of the surface layer. Applied Physics Letters 117:2.
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Isaku Kanno. 2019. Nanostructures in Ferroelectric Films for Energy Applications. Nanostructures in Ferroelectric Films for Energy Applications 237 255 .
Isaku Kanno. (2018) Piezoelectric MEMS: Ferroelectric thin films for MEMS applications. Japanese Journal of Applied Physics 57:4, pages 040101.
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Feng Chen, Wen-Bin Wu, Shun-Yi Li & Andreas Klein. (2014) Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy. Chinese Physics B 23:1, pages 017702.
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Feng Chen, Robert Schafranek, André Wachau, Sergey Zhukov, Julia Glaum, Torsten Granzow, Heinz von Seggern & Andreas Klein. (2010) Barrier heights, polarization switching, and electrical fatigue in Pb(Zr,Ti)O3 ceramics with different electrodes. Journal of Applied Physics 108:10.
Crossref
F Chen, R Schafranek, S Li, W B Wu & A Klein. (2010) Energy band alignment between Pb(Zr,Ti)O 3 and high and low work function conducting oxides—from hole to electron injection . Journal of Physics D: Applied Physics 43:29, pages 295301.
Crossref
S.K. Dey, W. Cao, S. Bhaskar & J. Li. (2006) Highly textured Pb(Zr 0.3 Ti 0.7 )O 3 thin films on GaN/sapphire by metalorganic chemical vapor deposition . Journal of Materials Research 21:6, pages 1526-1531.
Crossref
S. Y. Yang, B. T. Liu, J. Ouyang, V. Nagarajan, V. N. Kulkarni, R. Ramesh, J. Kidder, R. Droopad & K. Eisenbeiser. (2005) Epitaxial Pb(Zr,Ti)O3 Capacitors on Si by Liquid Delivery Metalorganic Chemical Vapor Deposition. Journal of Electroceramics 14:1, pages 37-44.
Crossref
R. E. Koritala, M. T. Lanagan, N. Chen, G. R. Bai, Y. Huang & S. K. Streiffer. (2011) Microstructure and properties of PbZr 0.6 Ti 0.4 O 3 and PbZrO 3 thin films deposited on template layers . Journal of Materials Research 15:9, pages 1962-1971.
Crossref
J. F. Roeder, S. M. Bilodeau, R. J. CarlJrJr, T. H. Baum, P. C. Van Buskirk, R. R. WoolcottJrJr & A. I. Kingon. (2011) Mocvd of Polycrystalline and Epitaxial Complex Oxides by Liquid Delivery. MRS Proceedings 474.
Crossref
Christopher M. Foster. 1997. Thin Film Ferroelectric Materials and Devices. Thin Film Ferroelectric Materials and Devices 167 197 .
Rainer M Waser. (1996) Microstructure of ceramic thin films. Current Opinion in Solid State and Materials Science 1:5, pages 706-714.
Crossref
P.Y. Chu, D.J. Taylor, P. Zurcher, B.E. White, S. Zafar, B. Jiang, B. Melnick, R.E. Jones, S.J. Gillespie, Wei Chen & N. Cave. (1996) Effects of film thickness and process parameters on the properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ ferroelectric capacitors for non-volatile memory applications. Effects of film thickness and process parameters on the properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ ferroelectric capacitors for non-volatile memory applications.

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