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Integrated Ferroelectrics
An International Journal
Volume 11, 1995 - Issue 1-4
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Original Articles

Characterization of an N-channel 1T-1C nonvolatile memory cell using ferroelectric SrBi2Ta2O9 as the capacitor dielectric

B. M. Melnick Symetrix Corporation, Colorado Springs, CO, 80918; Presently at Motorola, Phoenix Corporate Research Laboratories, Tempe, AZ, 85284
,
J. Gregory Symetrix Corporation, Colorado Springs, CO, 80918; Presently at Symbios (formerly NCR), Colorado Springs, CO, 80916
&
C. A. Paz De Araujo Symetrix Corporation, Colorado Springs, CO, 80918
Pages 145-160 | Received 22 Mar 1995, Published online: 19 Aug 2006

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Taekjib Choi, Youngsung Kim & Jaichan Lee. (2001) The growth and electrical properties of ferroelectric (Bi3.25 La0.75) Ti3O12 thin films for metal-ferroelectric-insulator-semiconductor. Ferroelectrics 261:1, pages 131-137.
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A.R. Krauss, O. Auciello, J. Im, V. Smentkowski, D.M. Gruen, E.A. Irene & R.P. H. Chang. (1997) Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis. Integrated Ferroelectrics 18:1-4, pages 351-368.
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Chee Won Chung, June K. Lee, Chang Jung Kim & Ilsub Chung. (1997) Fabrication and comparison of ferroelectric capacitor structures for memory applications. Integrated Ferroelectrics 16:1-4, pages 139-147.
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B.M. Melnick, J. Abrokwah, J. Hallmark & B. Ooms. (1997) Bismuth based layered perovskite thin films as a charge storage material for low power nonvolatile gaas memory applications. Integrated Ferroelectrics 15:1-4, pages 221-233.
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Articles from other publishers (20)

Firman Mangasa Simanjuntak, Tahta Amrillah, A. Syed Jalaluddeen, V. Bipin & Suresh Kumar Garlapati. 2023. Perovskite Ceramics. Perovskite Ceramics 401 484 .
S. Yin, G. Le Rhun, E. Defay, B. Vilquin, G. Niu, Y. Robach, C. Dragoi, L. Trupina & L. Pintilie. (2012) Pizeoelectric epitaxial sol-gel Pb(Zr<inf>0.52</inf>Ti<inf>0.48</inf>)O<inf>3</inf> film on Si(001). Pizeoelectric epitaxial sol-gel Pb(Zr<inf>0.52</inf>Ti<inf>0.48</inf>)O<inf>3</inf> film on Si(001).
S. Yin, G. Niu, B. Vilquin, B. Gautier, G. Le Rhun, E. Defay & Y. Robach. (2012) Epitaxial growth and electrical measurement of single crystalline Pb(Zr0.52Ti0.48)O3 thin film on Si(001) for micro-electromechanical systems. Thin Solid Films 520:14, pages 4572-4575.
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A.S. Borowiak, G. Niu, V. Pillard, G. Agnus, Ph. Lecoeur, D. Albertini, N. Baboux, B. Gautier & B. Vilquin. (2012) Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O3 films on silicon substrates. Thin Solid Films 520:14, pages 4604-4607.
Crossref
A. Roy, S. Maity, A. Dhar, D. Bhattacharya & S. K. Ray. (2009) Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films. Journal of Applied Physics 105:4.
Crossref
A. Roy, A. Dhar & S. K. Ray. (2008) Interfacial and electrical properties of SrBi2Ta2O9/ZrO2/Si heterostructures for ferroelectric memory devices. Journal of Applied Physics 104:6.
Crossref
A Roy, A Dhar, D Bhattacharya & S K Ray. (2008) Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi 2 Ta 2 O 9 /HfO 2 /Si using HfO 2 as buffer layer . Journal of Physics D: Applied Physics 41:9, pages 095408.
Crossref
A. C. Palanduz & D. M. Smyth. (2005) The Similar Defect Chemistry of Highly-Doped SrBi2Ta2O9 and SrBi2Nb2O9. Journal of Electroceramics 14:2, pages 123-132.
Crossref
L. Eric CrossS. Trolier-Mckinstry. 2003. digital Encyclopedia of Applied Physics. digital Encyclopedia of Applied Physics.
Y.P. Wang, L. Zhou, X.B. Lu & Z.G. Liu. (2003) C–V characteristics of Pt/PbZr0.53Ti0.47O3/LaAlO3/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si structures for ferroelectric gate FET memory. Applied Surface Science 205:1-4, pages 176-181.
Crossref
Joseph Ya-min Lee & Benjamin Chihming Lai. 2002. Handbook of Thin Films. Handbook of Thin Films 1 98 .
Joon Hyeong Kim, Jin Young Kim & Hyeong Joon Kim. (2011) Ferroelectric Properties of La-doped Bi 4 Ti 3 O 12 Thin Films deposited directly on Si by pulse-injection MOCVD . MRS Proceedings 655.
Crossref
Wen-yi Lin, Hai Huang, D. Kacy Cullen, Shara S. Shoup, Donald Cousins, Jerome J. Schmitt, Andrew T. Hunt, Robert R. Romanofsky, Fred W. VanKeuls, Félix A. Miranda & Carl H. Mueller. (2011) Thin Film Dielectrics for Electronics Using Combustion Chemical Vapor Deposition. MRS Proceedings 574.
Crossref
A.R. Krauss, J. Im, V. Smentkowski, J.A. Schultz, O. Auciello, D.M. Gruen, J. Holocek & R.P.H. Chang. (1998) Ion beam deposition and surface characterization of thin multi-component oxide films during growth. Materials Science and Engineering: A 253:1-2, pages 221-233.
Crossref
Orlando AucielloAlan R. KraussJaemo ImJ. Albert Schultz. (1998) STUDIES OF MULTICOMPONENT OXIDE FILMS AND LAYERED HETEROSTRUCTURE GROWTH PROCESSES VIA IN SITU, TIME-OF-FLIGHT ION SCATTERING AND DIRECT RECOIL SPECTROSCOPY. Annual Review of Materials Science 28:1, pages 375-396.
Crossref
M.T Montero, P Millán, P Durán-Martı́n, B Jiménez & A Castro. (1998) Solid solutions of lead-doped bismuth layer of Aurivillius n = 2 and n = 3 oxides: structural and dielectric characterization. Materials Research Bulletin 33:7, pages 1103-1115.
Crossref
Yong Tae Kim & Dong Suk Shin. (1997) Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor. Applied Physics Letters 71:24, pages 3507-3509.
Crossref
Christopher M. Foster. 1997. Thin Film Ferroelectric Materials and Devices. Thin Film Ferroelectric Materials and Devices 167 197 .
B. A. Tuttle. 1997. Thin Film Ferroelectric Materials and Devices. Thin Film Ferroelectric Materials and Devices 145 165 .
Orlando Auciello, Alan R. Krauss & Jaemo Im. 1997. Thin Film Ferroelectric Materials and Devices. Thin Film Ferroelectric Materials and Devices 91 113 .

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