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Integrated Ferroelectrics
An International Journal
Volume 13, 1996 - Issue 1-3
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Session IX: Thin films

Interface potential barrier height and leakage current behavior of Pt/(Ba, Sr)TiO3/Pt capacitors fabricated by sputtering process

Cheol Seong Hwang Samsung Electronics, Co., Semiconductors R & D Center, Memory Process Development Team 2, San # 24, Nosgseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do, 449-900, Korea
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Byoung Taek Lee Samsung Electronics, Co., Semiconductors R & D Center, Memory Process Development Team 2, San # 24, Nosgseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do, 449-900, Korea
,
Soon Oh Park Samsung Electronics, Co., Semiconductors R & D Center, Memory Process Development Team 2, San # 24, Nosgseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do, 449-900, Korea
,
Jin Won Kim Samsung Electronics, Co., Semiconductors R & D Center, Memory Process Development Team 2, San # 24, Nosgseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do, 449-900, Korea
,
Hag-Ju Cho Samsung Electronics, Co., Semiconductors R & D Center, Memory Process Development Team 2, San # 24, Nosgseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do, 449-900, Korea
,
Chang Seok Kang Samsung Electronics, Co., Semiconductors R & D Center, Memory Process Development Team 2, San # 24, Nosgseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do, 449-900, Korea
,
Hideki Horii Samsung Electronics, Co., Semiconductors R & D Center, Memory Process Development Team 2, San # 24, Nosgseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do, 449-900, Korea
,
Sang In Lee Samsung Electronics, Co., Semiconductors R & D Center, Memory Process Development Team 2, San # 24, Nosgseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do, 449-900, Korea
&
Moon Yong Lee Samsung Electronics, Co., Semiconductors R & D Center, Memory Process Development Team 2, San # 24, Nosgseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do, 449-900, Korea
 show all
Pages 157-177 | Received 27 May 1996, Published online: 19 Aug 2006

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J.F. Scott. (1999) Depletion width in SrTiO3 and BaxSr1−xTiO3 films. Ferroelectrics 232:1, pages 25-34.
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Articles from other publishers (20)

Y. H. Gao, H. Shen, J. H. Ma, J. Q. Xue, J. L. Sun, X. J. Meng, J. H. Chu & P. N. Wang. (2007) Surface chemical composition and optical properties of nitrogen-doped Ba0.6Sr0.4TiO3 thin films. Journal of Applied Physics 102:6.
Crossref
T. Hara. (2004) Leakage Behavior of DC Electrically Degraded<tex>$(hboxBa,hboxSr)hboxTiO_3$</tex>Thin Films. IEEE Transactions on Device and Materials Reliability 4:2, pages 268-272.
Crossref
Joseph Ya-min Lee & Benjamin Chihming Lai. 2002. Handbook of Thin Films. Handbook of Thin Films 1 98 .
J. S. Fang, C. T. Chang & T. S. Chin. (2011) Electric properties of barium–strontium titanate thin films deposited by two-step radio-frequency sputtering. Journal of Materials Research 16:9, pages 2680-2686.
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B. Nagaraj, S. Aggarwal & R. Ramesh. (2001) Influence of contact electrodes on leakage characteristics in ferroelectric thin films. Journal of Applied Physics 90:1, pages 375-382.
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M. C. Werner, I. Banerjee, R. Zhang, P. C. McIntyre, N. Tani & M. Tanimura. (2001) Dielectric relaxation and steady-state leakage in low-temperature sputtered (Ba, Sr)TiO3 thin films. Journal of Applied Physics 89:4, pages 2309-2313.
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T. M. ShawS. Trolier-McKinstryP. C. McIntyre. (2000) The Properties of Ferroelectric Films at Small Dimensions. Annual Review of Materials Science 30:1, pages 263-298.
Crossref
Se Hoon Oh, Kyung Woong Park, Jeong Hee Park, Boum Seock Kim & Duck Kyun Choi. (2000) Effects of (Ba, Sr)TiO3 film thickness on electrical properties of (Ba, Sr)TiO3/(Ba, Sr)RuO3 capacitor. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 18:4, pages 1923-1928.
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Jun Lin, Katsuaki Natori, Yoshiaki Fukuzumi, Mitsuaki Izuha, Kohji Tsunoda, Kazuhiro Eguchi, Katsuhiko Hieda & Daisuke Matsunaga. (2000) SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor annealed in the forming gas with and without oxygen addition. Applied Physics Letters 76:17, pages 2430-2432.
Crossref
Yung-Bin Lin & Joseph Ya-min Lee. (2000) The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications. Journal of Applied Physics 87:4, pages 1841-1843.
Crossref
Ki Hyun Yoon, Ji Hoon Park & Jae Hyuk Jang. (2011) Solution deposition processing and electrical properties of Ba(Ti 1− x Sn x )O 3 thin films . Journal of Materials Research 14:7, pages 2933-2939.
Crossref
Ju Cheol Shin, Jaehoo Park, Cheol Seong Hwang & Hyeong Joon Kim. (1999) Dielectric and electrical properties of sputter grown (Ba,Sr)TiO3 thin films. Journal of Applied Physics 86:1, pages 506-513.
Crossref
B. Nagaraj, T. Sawhney, S. Perusse, S. Aggarwal, R. Ramesh, V. S. Kaushik, S. Zafar, R. E. Jones, J.-H. Lee, V. Balu & J. Lee. (1999) (Ba,Sr)TiO 3 thin films with conducting perovskite electrodes for dynamic random access memory applications. Applied Physics Letters 74:21, pages 3194-3196.
Crossref
Cheol Seong Hwang & Suk Ho Joo. (1999) Variations of the leakage current density and the dielectric constant of Pt/(Ba,Sr)TiO3/Pt capacitors by annealing under a N2 atmosphere. Journal of Applied Physics 85:4, pages 2431-2436.
Crossref
Duck-Kyun Choi, Kyung-Woong Park, Jeong-Hee Park, Se-Hoon Oh, Boum-Seock Kim & Jae-Bok Lee. (2011) Enhancement in Electrical Properties of (Ba,Sr)TiO 3 Films Using Tailored Oxide Electrodes . MRS Proceedings 574.
Crossref
Cheol Seong Hwang, Byoung Taek Lee, Chang Seok Kang, Ki Hoon Lee, Hag-Ju Cho, Horii Hideki, Wan Don Kim, Sang In Lee & Moon Yong Lee. (1999) Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films. Journal of Applied Physics 85:1, pages 287-295.
Crossref
Cheol Seong Hwang. (1998) (Ba,Sr)TiO3 thin films for ultra large scale dynamic random access memory.. Materials Science and Engineering: B 56:2-3, pages 178-190.
Crossref
Su-Hyon Paek, Kong-Soo Lee, Jin-Yong Seong, Duck-Kyun Choi, Boum-Seock Kim & Chi-Sun Park. (1998) Control of structural, electrical properties of (Ba,Sr)TiO3/RuO2 thin films by the application of amorphous (Ba,Sr)TiO3 layer. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16:4, pages 2448-2453.
Crossref
Cheol Seong Hwang, Byoung Taek Lee, Chang Seok Kang, Jin Won Kim, Ki Hoon Lee, Hag-Ju Cho, Hideki Horii, Wan Don Kim, Sang In Lee, Young Bum Roh & Moon Yong Lee. (1998) A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes. Journal of Applied Physics 83:7, pages 3703-3713.
Crossref
Cheol Seong Hwang, Byoung Taek Lee, Hag-Ju Cho, Ki Hoon Lee, Chang Seok Kang, Horii Hideki, Sang In Lee & Moon Yong Lee. (1997) A positive temperature coefficient of resistivity effect from a paraelectric Pt/(Ba0.5,Sr0.5)TiO3/IrO2 thin-film capacitor. Applied Physics Letters 71:3, pages 371-373.
Crossref

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