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Integrated Ferroelectrics
An International Journal
Volume 17, 1997 - Issue 1-4
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Non-volatile memories and materials

Temperature dependence of ferroelectric properties of SrBi2Ta2O9 thin films

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Pages 57-65 | Published online: 19 Aug 2006

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Minoru Noda, Yoshinorimatsumuro, Hideki Sugiyama & Masanori Okuyama. (1999) A low temperature preparation of Sr0.7Bi2+ .Ta2O9 thin films on SiO2/Si by pulsed laser deposition for application of metal-ferroelectric-insulator-semiconductor structure. Ferroelectrics Letters Section 26:1-2, pages 17-28.
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CharlesD. E. Lakeman, TimothyJ. Boyle, A. Judith & MarkA. Rodriguez. (1998) Chemical solution deposition of SrBi2Ta2O9 (SBT) films for non-volatile memory applications. Integrated Ferroelectrics 22:1-4, pages 45-53.
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Articles from other publishers (6)

M. Takahashi, M. Noda & M. Okuyama. (2003) Photoelectron spectroscopic studies of bismuth-excess strontium bismuth tantalate thin films and their high-pressure-O2-annealing effects. Journal of Applied Physics 94:10, pages 6729-6734.
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. (2003) Electrical Properties of SBT Capacitors with various Annealing Atmosphere. Journal of the Korean Institute of Electrical and Electronic Material Engineers 16:3, pages 207-213.
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Masanori Okuyama, Minoru Noda & Kaoru Yamashita. (1999) A low-temperature preparation of ferroelectric SrxBi2+yTa2O9 thin film and its application to metal-ferroelectric-insulator-semiconductor structure. Materials Science in Semiconductor Processing 2:3, pages 239-245.
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Koichi Takemura, Takehiro Noguchi, Takashi Hase & Yoichi Miyasaka. (1998) Dielectric anomaly in strontium bismuth tantalate thin films. Applied Physics Letters 73:12, pages 1649-1651.
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C.D.E. Lakeman & T. J. Boyle. (2011) Chemical Solution Processing of Strontium Bismuth Tantalate Films. MRS Proceedings 541.
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Koichi Takemura, Takehiro Noguchi, Takashi Hase, Hidekazu Kimura & Yoichi Miyasaka. (2011) Composition Dependence of Dielectric Anomaly in Strontium Bismuth Tantalate Thin Films. MRS Proceedings 541.
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