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Integrated Ferroelectrics
An International Journal
Volume 17, 1997 - Issue 1-4
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Device integration

Development of a new annealing process to allow new top electrode materials for SrBi2Ta2O9 capacitors

Koji Watanabe Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
,
Masahiro Tanaka Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
,
Nicolas Nagel Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
,
Kenji Katori Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
,
Masataka Sugiyama Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
,
Hisayoshi Yamoto Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
&
Hajime Yagi Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
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Pages 451-460 | Published online: 19 Aug 2006

Citations (10)

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Walter Hartner, Günther Schindler, Volker Weinrich, Mattias Ahlstedt, Herbert Schroeder, Rainer Waser, Christine Dehm & Carlos Mazuré. (1999) Influence of dry etching using argon on structural and electrical properties of crystalline and non-crystalline SrBi2Ta2O9 thin films. Integrated Ferroelectrics 27:1-4, pages 213-225.
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J.F. Scott, K. Watanabe, A.J. Hartmann & R.N. Lamb. (1999) Device models for PZT/PT, BST/PT, SBT/PT, and SBT/BI ferroelectric memories. Ferroelectrics 225:1, pages 83-90.
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Koji Watanabe, AndreasJ. Hartmann, RobertN. Lamb & JamesF. Scott. (1998) A comparison of Schottky-limited and space-charge-limited currents in SrBi2Ta2O9 thin films. Integrated Ferroelectrics 21:1-4, pages 241-249.
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Walter Hartner, Günther Schindler, Volker Weinrich, Nicolas Nagel, Manfred Engelhardt, Vikram Joshi, Narayan Solayappan, Gary Derbenwick, Christine Dehm & Carlos Mazure. (1998) Role of recovery anneals for chemical solution deposition (CSD) based SrBi2Ta2O9 (SBT) thin films. Integrated Ferroelectrics 22:1-4, pages 23-33.
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Articles from other publishers (6)

. (2003) A Study on Electrical Properties of Sol-gel Derived Bi 3.25 La 0.75 Ti 3 O 12 Thin Films by Rapid Thermal Annealing . Journal of the Korean Ceramic Society 40:12, pages 1189-1196.
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. (2003) Low Temperature Sintering Process of Sol-gel Derived Ferroelectric Sr 0.9 Bi 2.1 Ta 1.8 Nb 0.2 O 9 Thin films . Journal of the Korean Ceramic Society 40:3, pages 279-285.
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Deborah J. Taylor. 2001. Frontiers of Thin Film Technology. Frontiers of Thin Film Technology 435 463 .
K. Watanabe, A. J. Hartmann, R. N. Lamb & J. F. Scott. (1998) Electronic characteristics of the SrBi2Ta2O9–Pt junction. Journal of Applied Physics 84:4, pages 2170-2175.
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Koji Watanabe, Masahiro Tanaka, Eiko Sumitomo, Kenji Katori, Hajime Yagi & J. F. Scott. (1998) Spin-coated ferroelectric SrBi2Nb2O9 thin films. Applied Physics Letters 73:1, pages 126-128.
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C.D.E. Lakeman & T. J. Boyle. (2011) Chemical Solution Processing of Strontium Bismuth Tantalate Films. MRS Proceedings 541.
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