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Integrated Ferroelectrics
An International Journal
Volume 16, 1997 - Issue 1-4
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Memory devices and charecterization

The use of voltage to accelerate the endurance degradation of PZT capacitors

T. D. Hadnagy Ramtron International Corporation, 1850 Ramtron Drive, Colorado Springs, CO, 80921
,
S. D. Traynor Ramtron International Corporation, 1850 Ramtron Drive, Colorado Springs, CO, 80921
&
D. I. Dalton Ramtron International Corporation, 1850 Ramtron Drive, Colorado Springs, CO, 80921
Pages 219-227 | Received 18 Mar 1996, Published online: 19 Aug 2006

Citations (6)

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Read on this site (3)

T. Domokos Hadnagy, Dave Dalton, Becky Thomas, Shan Sun & Rick Bailey. (2001) Retention after fatigue of ferroelectric memories. Integrated Ferroelectrics 37:1-4, pages 215-223.
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Fan Chu, Glen Fox & Tom Davenport. (2001) High endurance scaled plzt thin films for fram applications. Integrated Ferroelectrics 36:1-4, pages 43-52.
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Hiroyuki Kanaya, Tsuyoshi Iwamoto, Yukio Takahagi, Iwao Kunishima & Shinichi Tanaka. (1999) Hydrogen induced imprint mechanism of Pt/PZT/Pt capacitor by low temperature hydrogen treatment. Integrated Ferroelectrics 25:1-4, pages 235-244.
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Articles from other publishers (3)

M. Tsukada, H. Yamawaki, M. Kondo, J. S. Cross & K. Kurihara. (2004) Polarization Switching in (100)/(001) Oriented Epitaxial Pb(Zr, Ti)O3 Thin Films. Journal of Electroceramics 13:1-3, pages 29-33.
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Mineharu TSUKADAMitsuteru MUSHIGAJeffrey S. CROSS. (2004) Polarization Reversal of (111)- and (100)/(001)-Oriented Pb(Zr,Ti)O<sub>3</sub> Thin Film Capacitors with SrRuO<sub>3</sub> and IrO<sub>2</sub> Thin Film Top Electrodes. Journal of the Ceramic Society of Japan 112:1306, pages 311-315.
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Fan Chu, Glen Fox & Tom Davenport. (2011) Scaled PLZT Thin Film Capacitors with Excellent Endurance and Retention Performance. MRS Proceedings 655.
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