Citations (16)
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I. Stolichnov, A. Tagantsev, M. Doebeli & P. Schmuki. (1999) Pt-ion-implantation-induced suppression of leakage conduction in Pt/Pb)(ZrxTi1−x)O3/Pt capacitors. Integrated Ferroelectrics 23:1-4, pages 191-198.
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J.F. Scott, K. Watanabe, A.J. Hartmann & R.N. Lamb. (1999) Device models for PZT/PT, BST/PT, SBT/PT, and SBT/BI ferroelectric memories. Ferroelectrics 225:1, pages 83-90.
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RobertW. Schwartz, TammyL. Reichert, PaulG. Clem, Duane Dimos & David Liu. (1997) A comparison of diol and methanol-based chemical solution deposition routes for PZT thin film fabrication. Integrated Ferroelectrics 18:1-4, pages 275-286.
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Articles from other publishers (13)
Ni Zhong & Tadashi Shoisaki. (2007) Dielectric characteristic of fatigued Bi<inf>4-x</inf>La<inf>x</inf>Ti<inf>3</inf>O<inf>12</inf> ferroelectric films. Dielectric characteristic of fatigued Bi<inf>4-x</inf>La<inf>x</inf>Ti<inf>3</inf>O<inf>12</inf> ferroelectric films.
Dong Hua Li, Eun Sun Lee, Hyun Woo Chung & Sang Yeol Lee. (2006) Comparison of the effect of PLT and PZT buffer layers on PZT thin films for ferroelectric materials applications. Applied Surface Science 252:13, pages 4541-4544.
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Li Dong Hua, Eun Sun Lee, Hyun Woo Chung, Byung Du Ahn & Sang Yeol Lee. (2011) Effect of PLT Buffer Layers on the PZT Thin Films for Scaling-Down Ferroelectric Materials. MRS Proceedings 902.
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T.S. Moise, S.R. Summerfelt, H. McAdams, S. Aggarwal, K.R. Udayakumar, F.G. Celii, J.S. Martin, G. Xing, L. Hall, K.J. Taylor, T. Hurd, J. Rodriguez, K. Remack, M.D. Khan, K. Boku, G. Stacey, M. Yao, M.G. Albrecht, E. Zielinski, M. Thakre, S. Kuchimanchi, A. Thomas, B. McKee, J. Rickes, A. Wang, J. Grace, J. Fong, D. Lee, C. Pietrzyk, R. Lanham, S.R. Gilbert, D. Taylor, J. Amano, R. Bailey, F. Chu, G. Fox, S. Sun & T. Davenport. (2002) Demonstration of a 4 Mb, high density ferroelectric memory embedded within a 130 nm, 5 LM Cu/FSG logic process. Demonstration of a 4 Mb, high density ferroelectric memory embedded within a 130 nm, 5 LM Cu/FSG logic process.
S. R. Summerfelt, T. S. Moise, G. Xing, L. Colombo, T. Sakoda, S. R. Gilbert, A. L. S. Loke, S. Ma, L. A. Wills, R. Kavari, T. Hsu, J. Amano, S. T. Johnson, D. J. Vestcyk, M. W. Russell, S. M. Bilodeau & P. van Buskirk. (2001) Demonstration of scaled (⩾0.12 μm2) Pb(Zr,Ti)O3 capacitors on W plugs with Al interconnect. Applied Physics Letters 79:24, pages 4004-4006.
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G Kilian, M Rommel, W Pamler, E Unger, A Höpfner & B.O Kolbesen. (2001) Some aspects of the high-temperature behavior of bismuth, strontium and barium on silicon surfaces studied by total reflection X-ray fluorescence spectrometry. Spectrochimica Acta Part B: Atomic Spectroscopy 56:11, pages 2313-2319.
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A. K. Tagantsev, I. Stolichnov, E. L. Colla & N. Setter. (2001) Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features. Journal of Applied Physics 90:3, pages 1387-1402.
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Bang-Hung Tsao, S. Heidger & J.A. Weimer. (2001) Sputtered barium titanate and barium strontium titanate films for capacitor applications. Sputtered barium titanate and barium strontium titanate films for capacitor applications.
Jun-Kyu Yang, Woo Sik Kim & Hyung-Ho Park. (2001) Effect of grain size of Pb(Zr0.4Ti0.6)O3 sol–gel derived thin films on the ferroelectric properties. Applied Surface Science 169-170, pages 544-548.
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Bang-Hung Tsao, Sandra Fries Carr, Susan Heidger & Joseph A. Weimer. Sputtered Barium Titanate, Lead Zirconate Titanate, Barium Strontium Titanate Films for Capacitor Applications. Sputtered Barium Titanate, Lead Zirconate Titanate, Barium Strontium Titanate Films for Capacitor Applications.
M.H. Tsai & S.K. Dey. (2000) Electronic structure and total energy of SrBi/sub 2/Ta/sub 2/O/sub 9/ by first-principles calculations. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 47:4, pages 929-939.
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T.S. Moise, S.R. Summerfelt, G. Xing, L. Colombo, T. Sakoda, S.R. Gilbert, A. Loke, S. Ma, R. Kavari, L.A. Wills, T. Hsu, J. Amano, S.T. Johnston, D.J. Vestyck, M.W. Russell & S.M. Bilodeau. (1999) Electrical properties of submicron (≥0.13 μm/sup 2/) Ir/PZT/Ir capacitors formed on W plugs. Electrical properties of submicron (≥0.13 μm/sup 2/) Ir/PZT/Ir capacitors formed on W plugs.
I. Stolichnov & A. Tagantsev. (1998) Space-charge influenced-injection model for conduction in Pb(ZrxTi1−x)O3 thin films. Journal of Applied Physics 84:6, pages 3216-3225.
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