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Integrated Ferroelectrics
An International Journal
Volume 21, 1998 - Issue 1-4
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Session 4. Materials Processing-CVD

Properties of SrBi2Ta2O9 thin films grown by MOCVD for high density FeRAM applications

Frank Hintermaier Siemens AG, Semiconductor Division, Otto-Hahn-Ring 6, D-81739, Munich, Germany
,
Bryan Hendrix Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT, 06810, USA
,
Debra Desrochers Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT, 06810, USA
,
Jeffrey Roeder Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT, 06810, USA
,
Thomas Baum Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT, 06810, USA
,
Peter Van Buskirk Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT, 06810, USA
,
Dirk Bolten Institut für Werkstoffe der Elektrotechnik, RWTH Aachen University of Technology, D-52056, Aachen, Germany
,
Michael Grossmann Institut für Werkstoffe der Elektrotechnik, RWTH Aachen University of Technology, D-52056, Aachen, Germany
,
Oliver Lohse Institut für Werkstoffe der Elektrotechnik, RWTH Aachen University of Technology, D-52056, Aachen, Germany
,
Marcus Schumacher Institut für Werkstoffe der Elektrotechnik, RWTH Aachen University of Technology, D-52056, Aachen, Germany
,
Rainer Waser Institut für Werkstoffe der Elektrotechnik, RWTH Aachen University of Technology, D-52056, Aachen, Germany
,
Hans Cerva Siemens AG, Semiconductor Division, Otto-Hahn-Ring 6, D-81739, Munich, Germany
,
Christine Dehm Siemens AG, Semiconductor Division, Otto-Hahn-Ring 6, D-81739, Munich, Germany
,
Elke Fritsch Siemens AG, Semiconductor Division, Otto-Hahn-Ring 6, D-81739, Munich, Germany
,
Wolfgang Hönlein Siemens AG, Semiconductor Division, Otto-Hahn-Ring 6, D-81739, Munich, Germany
,
Carlos Mazuré Siemens AG, Semiconductor Division, Otto-Hahn-Ring 6, D-81739, Munich, Germany
,
Nicolas Nagel Siemens AG, Semiconductor Division, Otto-Hahn-Ring 6, D-81739, Munich, Germany
,
Peter Thwaite Siemens AG, Semiconductor Division, Otto-Hahn-Ring 6, D-81739, Munich, Germany
&
Hermann Wendt Siemens AG, Semiconductor Division, Otto-Hahn-Ring 6, D-81739, Munich, Germany
 show all
Pages 367-379 | Received 17 Apr 1998, Published online: 19 Aug 2006

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Harald Bachhofer, Hans Reisinger, Gernot Steinlesberger, Herbert Schroeder, Nicolas Nagel, Thomas Mdcolajick, Hans Cerva, Henning Von Philipsborn & Rainer Waser. (2001) Interfacial layers and their effect on leakage current in mocvd-deposited SBT thin films. Integrated Ferroelectrics 39:1-4, pages 189-198.
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Articles from other publishers (13)

Lynette Keeney & Ian M. Povey. 2022. Tailored Functional Oxide Nanomaterials. Tailored Functional Oxide Nanomaterials 1 42 .
Yingxin Chen, Minhui Xu, Xin Hu, Yifeng Yue, Xuefeng Zhang & Qundong Shen. (2020) High-resolution structural mapping and single-domain switching kinetics in 2D-confined ferroelectric nanodots for low-power FeRAM. Nanoscale 12:22, pages 11997-12006.
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N. Menou, Ch. Turquat, V. Madigou, Ch. Muller, L. Goux, J. Lisoni, M. Schwitters & D. J. Wouters. (2005) Sidewalls contribution in integrated three-dimensional Sr0.8Bi2.2Ta2O9-based ferroelectric capacitors. Applied Physics Letters 87:7.
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L. Goux, G. Russo, N. Menou, J.G. Lisoni, M. Schwitters, V. Paraschiv, D. Maes, C. Artoni, G. Corallo, L. Haspeslagh, D.J. Wouters, R. Zambrano & C. Muller. (2005) A Highly Reliable 3-D Integrated SBT Ferroelectric Capacitor Enabling FeRAM Scaling. IEEE Transactions on Electron Devices 52:4, pages 447-453.
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Sang-Woo Kang, Kee-Jeong Yang, Ki-Jung Yong & Shi-Woo Rhee. (2002) Precursors for Deposition of Strontium Bismuth Tantalate Films by Direct Liquid Injection-Metallorganic Chemical Vapor Deposition. Journal of The Electrochemical Society 149:1, pages C44.
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H. Bachhofer, H. von Philipsborn, W. Hartner, C. Dehm, B. Jobst, A. Kiendl, H. Schroeder & R. Waser. (2011) Phase formation and crystal growth of Sr–Bi–Ta–O thin films grown by metalorganic chemical vapor deposition. Journal of Materials Research 16:10, pages 2966-2973.
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B. K. Moon, K. Hironaka, C. Isobe & S. Hishikawa. (2001) Fabrication of ferroelectric SrBi2Ta2O9 capacitor films using plasma-assisted metalorganic chemical vapor deposition and their electrical properties. Journal of Applied Physics 89:11, pages 6370-6377.
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Stephen R. Gilbert, Debbie Ritchey, Malahat Tavassoli, Jun Amano, Luigi Colombo & Scott R. Summerfelt. (2001) Cross-Contamination during Ferroelectric Nonvolatile Memory Fabrication. Journal of The Electrochemical Society 148:4, pages G195.
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Yi Li, Xinju Yang, Yongxin Tang & Qizong Qin. (2016) Emission Spectroscopic and Mass Spectrometric Characterization of Laser-Ablated Species from a Ferroelectric SrBi 2 Ta 2 O 9 Target . Applied Spectroscopy 54:5, pages 645-650.
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J.F Roeder, B.C Hendrix, F Hintermaier, D.A Desrochers, T.H Baum, G Bhandari, M Chappuis, P.C Van Buskirk, C Dehm, E Fritsch, N Nagel, H Wendt, H Cerva, W Hönlein & C Mazuré. (1999) Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD). Journal of the European Ceramic Society 19:6-7, pages 1463-1466.
Crossref
Angus I Kingon & Stephen K Streiffer. (1999) Ferroelectric films and devices. Current Opinion in Solid State and Materials Science 4:1, pages 39-44.
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Harald Bachhofer, Frank Hintermaier, Manfred Hauf, Oswald Spindler, Thomas Haneder, Christine Dehm, Henning von Philipsborn & Rainer Waser. (2011) Effect of Film Composition on Low Temperature Processing of SBT Deposited by MOCVD. MRS Proceedings 596.
Crossref
B. C. Hendrix, T. E. Glassman & J. F. Roeder. (2011) MOCVD of Nb Substituted SrBi2Ta2O9 for Integrated Ferroelectric Capacitors. MRS Proceedings 596.
Crossref

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