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Integrated Ferroelectrics
An International Journal
Volume 21, 1998 - Issue 1-4
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Session 5. Materials Processing-PVD

Recent progress in sputtering PZT thin films for ferroelectric memories

Tomoyuki Sakoda Texas Instruments Tsukuba Research & Development Center Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki, 305-0841, Japan
,
Katsuhiro Aoki Texas Instruments Tsukuba Research & Development Center Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki, 305-0841, Japan
,
Satoshi Hashimoto Texas Instruments Tsukuba Research & Development Center Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki, 305-0841, Japan
&
Yukio Fukuda Texas Instruments Tsukuba Research & Development Center Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki, 305-0841, Japan
Pages 385-396 | Received 28 Apr 1998, Published online: 19 Aug 2006

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Read on this site (1)

I.Y. (Steve) Shen, G.Z. Cao, Chia-Che Wu & Cheng-Chun Lee. (2006) PZT Thin-Film Meso- and Micro Devices. Ferroelectrics 342:1, pages 15-34.
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Articles from other publishers (2)

Yi-Chu Hsu, Chia-Che Wu, Cheng-Chun Lee, G.Z. Cao & I.Y. Shen. (2004) Demonstration and characterization of PZT thin-film sensors and actuators for meso- and micro-structures. Sensors and Actuators A: Physical 116:3, pages 369-377.
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T. Sakoda, K. Aoki & Y. Fukuda. (2011) Sputtered Pb(Zr, Ti)O3 Thin Films for Ferroelectric Capacitors. MRS Proceedings 596.
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