Citations (7)
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Articles from other publishers (5)
Rohit Medwal, Surbhi Gupta, Shojan P. Pavunny, Rajesh K. Katiyar, Reji Thomas & Ram S. Katiyar. (2017) Low-voltage-driven Pt/BiFeO3/DyScO3/p-Si-based metal–ferroelectric–insulator–semiconductor device for non-volatile memory. Journal of Materials Science 53:6, pages 4274-4282.
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Koji Aizawa, Byung-Eun Park, Yoshihito Kawashima, Kazuhiro Takahashi & Hiroshi Ishiwara. (2004) Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors. Applied Physics Letters 85:15, pages 3199-3201.
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B.K. Moon, H. Ishiwara, E. Tokumitsu & M. Yoshimoto. (2001) Characteristics of ferroelectric Pb(Zr,Ti)O3 films epitaxially grown on CeO2(111)/Si(111) substrates. Thin Solid Films 385:1-2, pages 307-310.
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