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Integrated Ferroelectrics
An International Journal
Volume 26, 1999 - Issue 1-4
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Section G: Materials processing – PVD

Ferroelectric properties of PLZT thin films prepared using ULVAC ZX-1000 sputtering system

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Pages 47-55 | Received 07 Mar 1999, Published online: 19 Aug 2006

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Read on this site (4)

Fan Chu, Glen Fox & Tom Davenport. (2001) High endurance scaled plzt thin films for fram applications. Integrated Ferroelectrics 36:1-4, pages 43-52.
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R. Romanofsky, F. Van Keuls, C. Mueller, F. Miranda, G. Fox, F. Chu, F. Gladden & A. Hunt. (2001) Progress in economically viable phase shifters based on thin ferroelectric films. Integrated Ferroelectrics 39:1-4, pages 299-311.
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Shan Sun, GlenR. Fox & Fan Chu. (2001) Comparison of sputtered SBTN and PLZT thin film capacitors for FRAM applications. Integrated Ferroelectrics 39:1-4, pages 109-118.
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Articles from other publishers (5)

Yingying Wang, Hongbo Cheng, Jing Yan, Ning Chen, Peng Yan, Feng Yang & Jun Ouyang. (2019) Large piezoelectricity on Si from highly (001)-oriented PZT thick films via a CMOS-compatible sputtering/RTP process. Materialia 5, pages 100228.
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Kinam Kim & Yoon J. Song. (2003) Integration technology for ferroelectric memory devices. Microelectronics Reliability 43:3, pages 385-398.
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G.R. FOX & S. Summerfelt. (2011) Model Relating Thin Film Pzt Crystallographic Texture to Ferroelectric Switching Performance. MRS Proceedings 721.
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Mark D. Vaudin, Glen R. Fox & Glen R. Kowach. (2011) Accuracy and Reproducibility of X-ray Texture Measurements on Thin Films. MRS Proceedings 721.
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Fan Chu, Glen Fox & Tom Davenport. (2011) Scaled PLZT Thin Film Capacitors with Excellent Endurance and Retention Performance. MRS Proceedings 655.
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