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Philosophical Magazine B Volume 47, 1983 - Issue 5
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Original Articles

The interpretation of drift mobility experiments on amorphous silicon

W. E. SpearCarnegie Laboratory of Physics, The University, DundeeDD1 4HN, Scotland
&
H. SteemersCarnegie Laboratory of Physics, The University, DundeeDD1 4HN, Scotland
Pages L77-L82 | Received 31 Jan 1983, Accepted 08 Mar 1983, Published online: 30 Oct 2015

Citations (21)

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Read on this site (4)

M. Abkowitz & R.C. Enck. (1984) Xerographic determination of electron drift mobility in a-Si: H. Philosophical Magazine B 49:3, pages L37-L41.
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W.E. Spear, H.L. Steemers & H. Mannsperger. (1983) Carrier lifetimes in amorphous silicon junctions from delayed and interrupted field experiments. Philosophical Magazine B 48:5, pages L49-L54.
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Rolf Könenkamp, AllenM. Hermann & ArunM. Madan. (1983) Photocurrent reversal and time-of-flight in amorphous silicon-hydrogen films. Philosophical Magazine B 48:4, pages L33-L37.
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W.E. Spear & H.L. Steemers. (1983) The reversal of drifting excess carriers in an amorphous silicon junction. Philosophical Magazine B 47:6, pages L107-L112.
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Articles from other publishers (17)

N. Mirchin & A. Peled. (2005) Time of flight transients analysis in photo-excited molecular doped polymers. Applied Surface Science 248:1-4, pages 79-85.
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D. Bloom & S. W. S. McKeever. (1997) Temperature dependence of electron mobility in Bi12GeO20 and Bi12SiO20 using the time-of-flight technique. Journal of Applied Physics 82:1, pages 249-258.
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D. S. Shen, J. P. Conde, V. Chu & S. Wagner. (1994) Carrier lifetime in amorphous semiconductors. Journal of Applied Physics 75:11, pages 7349-7355.
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N.R. Mirchina & A. Peled. (1994) Displacement currents by propagating charge packets in capacitor structures I: Basic formalism applied to the case of a thin charge packet. Journal of Electrostatics 32:2, pages 123-132.
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S.S. He, D.J. Stephens & G. Lucovsky. (2011) Back-Channel Surface Modifications for a-Si:H Thin Film Transistors, TFTs, by Exposure to Plasma Excited N 2 O . MRS Proceedings 318.
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C. I. Ukah, J. M. Perz & S. Zukotynski. (1989) Surface photovoltage spectroscopy in hydrogenated amorphous silicon. Journal of Applied Physics 65:9, pages 3617-3630.
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Harald Overhof & Peter ThomasHarald Overhof & Peter Thomas. 1989. Electronic Transport in Hydrogenated Amorphous Semiconductors. Electronic Transport in Hydrogenated Amorphous Semiconductors 39 61 .
J Haladyj & G W Bak. (1987) Drift mobility of charge carriers in some organic materials. Journal of Physics C: Solid State Physics 20:34, pages 5809-5818.
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H. Michiel, G. J. Adriaenssens & E. A. Davis. (1986) Extended-state mobility and its relation to the tail-state distribution in a -Si:H . Physical Review B 34:4, pages 2486-2499.
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J.M. Marshall, P.G. LeComber & W.E. Spear. (1985) Comments on the calculation of the extended state electron mobility in amorphous silicon. Solid State Communications 54:1, pages 11-14.
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J. Mort & F. Jansen. 1985. Tetrahedrally-Bonded Amorphous Semiconductors. Tetrahedrally-Bonded Amorphous Semiconductors 531 541 .
J. Kočka & K. Čermák. (1984) Drift Mobility of a-Si:H. physica status solidi (b) 125:1, pages K89-K91.
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R.C. Enck & M. Abkowitz. (1984) Xerographic determination of drift mobility in a-Si:H. Journal of Non-Crystalline Solids 66:1-2, pages 255-260.
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W.E. Spear & H.L. Steemers. (1984) The investigation of excess carrier lifetimes in amorphous silicon by transient methods. Journal of Non-Crystalline Solids 66:1-2, pages 163-174.
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T. Tiedje. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 207 238 .
W.E. Spear. (1983) The study of transport and related properties of amorphous silicon by transient experiments. Journal of Non-Crystalline Solids 59-60, pages 1-13.
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M. H. Brodsky. 1985. Amorphous Semiconductors. Amorphous Semiconductors 331 343 .

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