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Philosophical Magazine B Volume 38, 1978 - Issue 3
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Original Articles

Doping of amorphous silicon in the hopping transport regime

G. Müller Max-Planck-Institut für Kernphysik, D-6900, Heidelberg, F. R. Germany
&
S. Kalbitzer Max-Planck-Institut für Kernphysik, D-6900, Heidelberg, F. R. Germany
Pages 241-254 | Received 30 Mar 1978, Accepted 03 Jul 1978, Published online: 01 Dec 2006

Citations (18)

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Read on this site (5)

G. Müller, W. Hellmich, G. Krötz, S. Kalbitzer, G. N. Greaves, G. Derst, A. J. Dent & B. R. Dobson. (1996) Dopant‐defect interactions in hydrogen‐free amorphous silicon. Philosophical Magazine B 73:2, pages 245-259.
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G. Müller, G. Krötz, S. Kalbitzer & G.N. Greaves. (1994) Reversible and irreversible structural changes in amorphous silicon. Philosophical Magazine B 69:2, pages 177-196.
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B. Ruttensperger, G. MÜLler & G. KrÖTz. (1993) Density-of-state distribution and variable-range hopping transport in amorphous silicon prepared by ion bombardment. Philosophical Magazine B 68:2, pages 203-214.
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G. Müller & P.G. Le Comber. (1981) Implantation damage in amorphous silicon. Philosophical Magazine B 43:3, pages 419-431.
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G. Müller & S. Kalbitzer. (1980) The crystalline-to-amorphous transition in ion-bombarded silicon. Philosophical Magazine B 41:3, pages 307-325.
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Articles from other publishers (13)

Shin-ichiro Sato & Takeshi Ohshima. (2014) Reversible changes in temperature dependence of electric conductivity of hydrogenated amorphous silicon caused by proton irradiation. Journal of Non-Crystalline Solids 392-393, pages 11-18.
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L.L. Snead & S.J. Zinkle. (2002) Structural relaxation in amorphous silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 191:1-4, pages 497-503.
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G. Mütter, S. Kalbitzer & G.N. Greaves. 1997. Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physicochemical Characterization. Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physicochemical Characterization 85 127 .
U. Zammit, K. N. Madhusoodanan, M. Marinelli, F. Scudieri, R. Pizzoferrato, F. Mercuri, E. Wendler & W. Wesch. (1994) Optical-absorption studies of ion-implantation damage in Si on sapphire. Physical Review B 49:20, pages 14322-14330.
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U. Zammit, K. N. Madhusoodanan, F. Scudieri, F. Mercuri, E. Wendler & W. Wesch. (1994) Optical-absorption study of structural relaxation of ion-implanted a -Si . Physical Review B 49:3, pages 2163-2166.
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S. Kalbitzer. 1994. Defects and Disorder in Crystalline and Amorphous Solids. Defects and Disorder in Crystalline and Amorphous Solids 279 313 .
A. Battaglia, S. Coffa, F. Priolo, G. Compagnini & G. A. Baratta. (1993) Low‐temperature modifications in the defect structure of amorphous silicon probed by in situ Raman spectroscopy . Applied Physics Letters 63:16, pages 2204-2206.
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S. Coffa & J. M. Poate. (1993) Dopant compensation effects on impurity trapping and electrical resistivity of ion implanted amorphous silicon. Applied Physics Letters 63:8, pages 1080-1082.
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S. Coffa, F. Priolo & A. Battaglia. (1993) Defect production and annealing in ion-implanted amorphous silicon. Physical Review Letters 70:24, pages 3756-3759.
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S. Coffa, A. Battaglia & F. Priolo. (2011) Ion Beam Induced Structural and Electrical Modifications in Crystalline and Amorphous Silicon. MRS Proceedings 316.
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S. Coffa & J. M. Poate. 1992. Crucial Issues in Semiconductor Materials and Processing Technologies. Crucial Issues in Semiconductor Materials and Processing Technologies 427 444 .
R. M. Walser & Young-Jin Jeon. (2011) Application of Solid Phase Epitaxy for Measuring Dangling Bond Densities and Impurity Ionization in Amorphous Silicon. MRS Proceedings 205.
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Y. Ochiai. (1987) Dose dependence of N(EF) in evaporated a-Si. Physica Status Solidi (a) 99:2, pages K87-K90.
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