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Philosophical Magazine B Volume 38, 1978 - Issue 5
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Original Articles

II. Experimental Hall effect data for amorphous semiconductors

M. Roilos Department of Physics, University of Patras, Patras, Greece
Pages 477-489 | Received 20 Jul 1978, Accepted 20 Aug 1978, Published online: 01 Dec 2006

Citations (23)

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R.H. Friend & A.D. Yoffe. (1987) Electronic properties of intercalation complexes of the transition metal dichalcogenides. Advances in Physics 36:1, pages 1-94.
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P.C. Klipstein, R.H. Friend & A.D. Yoffe. (1985) Localization in the Peierls gap. Philosophical Magazine B 52:3, pages 611-642.
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A. Vomvas & M. Roilos. (1984) The Hall effect in vitreous 80V2O5—20P2O5 . Philosophical Magazine B 49:2, pages 143-150.
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H. Overhof & W. Beyer. (1981) A model for the electronic transport in hydrogenated amorphous silicon. Philosophical Magazine B 43:3, pages 433-450.
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N.F. Mott. (1978) VIII. Some comments and suggestions on the Hall effect in non-crystalline systems. Philosophical Magazine B 38:5, pages 549-553.
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Articles from other publishers (18)

Zhili Li, Jiye Zhang, Pengfei Luo, Jiayi Chen, Bowen Huang, Yuzhe Sun & Jun Luo. (2023) Flexible Ag–S–Te System with Promising Room-Temperature Thermoelectric Performance. ACS Applied Materials & Interfaces 15:28, pages 33605-33611.
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A. Baset Gholizadeh, Alex S. Walton, Richard Smith, Jonathan England, Christopher Craig, Dan Hewak & Richard J. Curry. (2020) Photo-Seebeck study of amorphous germanium–tellurium-oxide films. Journal of Materials Science: Materials in Electronics 31:24, pages 22000-22011.
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Shiyang He, Yongbo LiLu LiuYing JiangJingjing FengWei ZhuJiye Zhang, Zirui DongYuan Deng, Jun Luo, Wenqing Zhang & Gang Chen. (2020) Semiconductor glass with superior flexibility and high room temperature thermoelectric performance. Science Advances 6:15.
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Shinri Ozaki, Yasuo Wada & Kei Noda. (2016) DC Hall-effect measurement for inkjet-deposited films of poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) by using microscale gap electrodes. Synthetic Metals 215, pages 28-34.
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Toshio Kamiya, Kenji Nomura & Hideo Hosono. (2010) Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors. Applied Physics Letters 96:12.
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Toshio Kamiya, Kenji Nomura & Hideo Hosono. (2009) Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model. Journal of Display Technology 5:12, pages 462-467.
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Nadia Camaioni, Giuseppe Casalbore-Miceli, Alessandro Geri & Sergio Nicoletti. (1998) Hall mobility in poly(4,4′-dipentoxy-2,2′bithiophene) as a function of the doping level. Applied Physics Letters 73:2, pages 253-255.
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B. Movaghar & R. Cochrane. (2006) The Hall Effect in Amorphous Metals and Alloys. physica status solidi (b) 166:2, pages 311-338.
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M.S. Zaghloul & M.N. Youns. (1991) Effects of both irradiation energy and annealing temperatures on hall voltage of new concrete mixer. Cement and Concrete Research 21:4, pages 426-440.
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N. Du, Y. T. Zhu, B. Y. Tong & S. K. Wong. (1990) Observation of normal Hall coefficient of amorphous Si thin films prepared by low-pressure chemical-vapor deposition. Physical Review B 41:2, pages 1251-1253.
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N. Du, Y.T. Zhu, B.Y. Tong, P.K. John, S.K. Wong & K.P. Chik. (1989) Normal Hall coefficient of LPCVD amorphous silicon. Journal of Non-Crystalline Solids 114, pages 369-371.
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Harald Overhof & Peter ThomasHarald Overhof & Peter Thomas. 1989. Electronic Transport in Hydrogenated Amorphous Semiconductors. Electronic Transport in Hydrogenated Amorphous Semiconductors 39 61 .
David Adler. 1985. Physical Properties of Amorphous Materials. Physical Properties of Amorphous Materials 5 103 .
Lionel Friedman. 1985. Physics of Disordered Materials. Physics of Disordered Materials 413 423 .
B. Movaghar. 1985. Physics of Disordered Materials. Physics of Disordered Materials 399 412 .
David Adler. 1985. Physics of Disordered Materials. Physics of Disordered Materials 287 304 .
W. Beyer & H. Overhof. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 257 307 .
Walther Fuhs. 1984. Advances in Solid State Physics. Advances in Solid State Physics 133 161 .

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