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Philosophical Magazine B Volume 40, 1979 - Issue 3
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Original Articles

Annealing studies of erbium-implanted zinc sulphide

C. C. Yu Department of Physics, University of Hull, Hull, England; Kirin Institute of Physics, Changchun, China
&
F. J. Bryant Department of Physics, University of Hull, Hull, England
Pages 209-222 | Received 09 Aug 1978, Accepted 25 May 1979, Published online: 01 Dec 2006

Citations (8)

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F.J. Bryant. (1982) Ion implantation and luminescence. Radiation Effects 65:1-4, pages 81-93.
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Articles from other publishers (7)

V. V. Ushakov, Yu. V. Klevkov & V. A. Dravin. (2015) Ion implantation of erbium into polycrystalline cadmium telluride. Semiconductors 49:5, pages 630-633.
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K Lobe, R Boyn & H Zimmermann. (1993) Excitation of the 4f-4f emission of donor-type rare-earth centres through donor-acceptor pair states (ZnS:Tn, ZnS:Sm). Journal of Physics: Condensed Matter 5:34, pages 6335-6344.
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R. Boyn. (2006) 4f–4f Luminescence of Rare‐Earth Centers in II–VI Compounds. physica status solidi (b) 148:1, pages 11-47.
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Nasrin Abolhassani & F.J. Bryant. (1987) Effect of non-stoichiometry on the occurrence of Er3+ luminescence sites in erbium-implanted zinc selenide. Journal of Physics and Chemistry of Solids 48:5, pages 469-473.
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F. J. Bryant, W. E. Hagston & A. Krier. (1986) The electroluminescence of rare-earth implanted ZnS and ZnSe diodes. physica status solidi (a) 94:2, pages 701-712.
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T.W. Sigmon. (1985) Ion implantation in II–VI compound semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 7-8, pages 402-408.
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F.J. Bryant. (1983) Ion implanation in group II–VI compounds. Progress in Crystal Growth and Characterization 6:2, pages 191-263.
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