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Philosophical Magazine B Volume 41, 1980 - Issue 3
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Original Articles

The crystalline-to-amorphous transition in ion-bombarded silicon

G. Müller Max-Planck-Institut für Kcrnphysik, Postfach 103 980. D-G900, Heidelberg, F.R., Germany
&
S. Kalbitzer Max-Planck-Institut für Kcrnphysik, Postfach 103 980. D-G900, Heidelberg, F.R., Germany
Pages 307-325 | Received 06 Aug 1979, Accepted 15 Sep 1979, Published online: 01 Dec 2006

Citations (39)

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K.L. Bhatia, Ch. Wilbertz, G. Derst & S. Kalbitzer. (1994) Effect of ion-beam induced disorder on optical interband transitions in Si and GaAs. Radiation Effects and Defects in Solids 128:4, pages 341-355.
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A.C. Hourd, D.L. Melville & W.E. Spear. (1991) Electronic properties of amorphous and microcrystalline silicon prepared in a microwave plasma from SiF4 . Philosophical Magazine B 64:5, pages 533-550.
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G. Krötz, J. Wind, H. Stitzl, G. Müller, S. Kalbitzer & H. Mannsperger. (1991) Experimental tests of the autocompensation model of doping. Philosophical Magazine B 63:1, pages 101-121.
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B.N. Mukashev, V.V. Smirnov, S. Kalbitzer, M. Weiser, R. Börret & M. Behar. (1990) Molecular ion implantation into silicon. Radiation Effects and Defects in Solids 114:1-2, pages 3-14.
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M. Konuma, H. Curtins, F.-A. Sarott & S. Vepřek. (1987) Dependence of electrical conductivity of nanocrystalline silicon on structural properties and the effect of substrate bias. Philosophical Magazine B 55:3, pages 377-389.
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V. Voegele, S. Kalbitzer & K. Böhringer. (1985) Observation of correlation effects in the hopping transport in amorphous silicon. Philosophical Magazine B 52:2, pages 153-168.
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Jun Amano. (1982) Reduction of crystalline defects in sos by room temperature Si ion implantation. Radiation Effects 61:3-4, pages 195-200.
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D.A. Thompson. (1981) High density cascade effects. Radiation Effects 56:3-4, pages 105-150.
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Articles from other publishers (31)

Joseph R. Vella & David B. Graves. (2023) Near-surface damage and mixing in Si-Cl2-Ar atomic layer etching processes: Insights from molecular dynamics simulations. Journal of Vacuum Science & Technology A 41:4.
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G. Neville Greaves. 2019. Springer Handbook of Glass. Springer Handbook of Glass 719 770 .
M. A. Gluba, N. H. Nickel, K. Hinrichs & J. Rappich. (2013) Improved passivation of the ZnO/Si interface by pulsed laser deposition. Journal of Applied Physics 113:4.
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. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 2 .
Gerhard Müller. (1998) Amorphisation processes in silicon. Current Opinion in Solid State and Materials Science 3:4, pages 364-370.
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R. A. C. M. M. van Swaaij, A. D. Annis, B. J. Sealy & J. M. Shannon. (1997) Electronic effects of ion damage in hydrogenated amorphous silicon alloys. Journal of Applied Physics 82:10, pages 4800-4804.
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G. Mütter, S. Kalbitzer & G.N. Greaves. 1997. Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physicochemical Characterization. Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physicochemical Characterization 85 127 .
S. T. Chavan, P. S. Bhave, V. N. Bhoraskar & D. Kanjilal. (1995) Damage induced by 90 MeV silicon ions in crystalline silicon. Journal of Applied Physics 78:4, pages 2328-2332.
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S. Kalbitzer. 1994. Defects and Disorder in Crystalline and Amorphous Solids. Defects and Disorder in Crystalline and Amorphous Solids 279 313 .
A. Harnau & H.-U. Schreiber. (2011) Slight Radiation Damage in Silicon for Si-Based Device Processing. MRS Proceedings 316.
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Gerhard Müller. (1993) The contribution of ion-beam techniques to the physics and technology of amorphous semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 80-81, pages 957-965.
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S. Coffa, D. C. Jacobson, J. M. Poate & F. Priolo. (1992) Mechanisms of ion-beam-enhanced diffusion in amorphous silicon. Applied Physics A Solids and Surfaces 54:6, pages 481-484.
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J Reichenbach, M Kaiser, J Anders, H Byrne & S Roth. (1992) Picosecond Photoconductivity in (CH) x Measured by Cross-Correlation . Europhysics Letters (EPL) 18:3, pages 251-256.
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J. Tatarkiewicz. (1989) Optical Effects of High Energy Implantations in Semiconductors. physica status solidi (b) 153:1, pages 11-47.
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Ch. Wilbertz, K.L. Bhatia, W. Krätschmer & S. Kalbitzer. (1989) Optical properties of ion-implanted silicon-on-sapphire layers. Materials Science and Engineering: B 2:4, pages 325-331.
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K.L. Bhatia, W. Krätschmer & S. Kalbitzer. (1988) Optical absorption of ion-implanted amorphous silicon. Thin Solid Films 163, pages 331-335.
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C. Licoppe, Y. I. Nissim & C. d’Anterroches. (1988) Growth-front instabilities in solid-state recrystallization of amorphous GaAs films. Physical Review B 37:3, pages 1287-1293.
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K. L. Bhatia, W. Kr�tschmer & S. Kalbitzer. (1988) Optical absorptivity of ion-beam irradiated silicon. Applied Physics A Solids and Surfaces 45:1, pages 69-72.
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P.F.P. Fichtner, M. Behar, C.A. Olivieri, R.P. Livi, J.P. De Souza, F.C. Zawislak, J.P. Biersack & D. Fink. (1987) Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 28:4, pages 481-487.
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S. Kalbitzer. (1987) Ionographic patterns with amorphous/crystalline contrast. Applied Physics A Solids and Surfaces 44:2, pages 153-155.
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Th. Pfeiffer, J. Kuhl, E. O. Göbel & L. Palmetshofer. (1987) Temperature dependence of the picosecond carrier relaxation in silicon-irradiated silicon-on-sapphire films. Journal of Applied Physics 62:5, pages 1850-1855.
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W. P. Maszara & G. A. Rozgonyi. (1986) Kinetics of damage production in silicon during self-implantation. Journal of Applied Physics 60:7, pages 2310-2315.
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K. Böhringer, H. Mannsperger & S. Kalbitzer. (1985) Electronic transport in a-Si:H produced by ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 7-8, pages 299-303.
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J.F. Ziegler. (1985) High energy ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 6:1-2, pages 270-282.
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X. C. Deng, X. H. Liu, K. B�hringer & S. Kalbitzer. (1984) Hopping and band transport in amorphized semiconductors. Applied Physics A Solids and Surfaces 33:1, pages 29-35.
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H. Klose, A. Mertens, R. Reetz & Ng. Tang. (1983) Ion Beam Contacting of Silicon I. Aluminium in p-Silicon. Physica Status Solidi (a) 77:1, pages 233-239.
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M.O. Ruault, J. Chaumont & H. Bernas. (1983) Transmission electron microscopy study of ion implantation induced Si amorphization. Nuclear Instruments and Methods in Physics Research 209-210, pages 351-356.
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M. O. Ruault, J. Chaumont & H. Bernas. (1983) In Situ Study of Implantation-Induced Silican Amorphisation. IEEE Transactions on Nuclear Science 30:2, pages 1746-1748.
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S.G. Roberts & T.F. Page. 1982. Ion Implantation Into Metals. Ion Implantation Into Metals 135 146 .
R. Pfeilsticker, S. Kalbitzer & C. Müller. (1981) Electronic transport in ion-bombarded amorphous silicon. Nuclear Instruments and Methods 182-183, pages 603-608.
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G. M�ller, S. Kalbitzer & R. Pfeilsticker. (1980) Control of hopping conductivity by structural modification of amorphous silicon. Zeitschrift f�r Physik B Condensed Matter 39:1, pages 21-24.
Crossref

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