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Philosophical Magazine B Volume 43, 1981 - Issue 2
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Original Articles

Chemical bonding states in the amorphous SixC1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectra

Yoshifumi Katayama Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185, Japan
,
Katsuhisa Usami Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185, Japan
&
Toshikazu Shimada Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185, Japan
Pages 283-294 | Received 10 Sep 1979, Accepted 18 Feb 1980, Published online: 20 Aug 2006

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S. Kerdiles & R. Rizk. (2002) Low temperature nanocrystallízation of silicon carbide by hydrogen reactive magnetron sputtering. Philosophical Magazine A 82:3, pages 601-614.
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R. EI Ghrandi, J. Calderer, B. Garrido, J. J. Pedroviejo & J. R. Morante. (1996) Local structure and oxygen absorption in a-Si1−xCx (x< 0·4) alloys grown on silicon by plasma enhanced chemical vapour deposition. Materials Science and Technology 12:1, pages 103-107.
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F. Demichelis, F. Giorgis, C.F. Pirri & E. Tresso. (1995) Bonding structure and defects in wide band gap a-Si1− C :H films deposited in Hz diluted SiH4 + CH4 gas mixtures. Philosophical Magazine B 71:5, pages 1015-1033.
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F. Demichelis, G. Crovini, C.F. Pirri & E. Tresso. (1993) Infrared vibrational spectra of hydrogenated amorphous and microcrystalline silicon-carbon alloys. Philosophical Magazine B 68:3, pages 329-340.
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John Robertson. (1992) The electronic and atomic structure of hydrogenated amorphous Si—C alloys. Philosophical Magazine B 66:5, pages 615-638.
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Akiharu Morimoto, Toyotaka Kataoka, Minoru Kumeda & Tatsuo Shimizu. (1984) Annealing and crystallization processes in tetrahedrally bonded binary amorphous semiconductors. Philosophical Magazine B 50:4, pages 517-537.
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