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Original Articles

The role of hydrogen in heavily doped amorphous silicon

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Pages 51-68 | Received 07 Oct 1980, Accepted 10 Mar 1981, Published online: 01 Dec 2006

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Read on this site (2)

D.E. Carlson. (1990) The doping of hydrogenated amorphous silicon and its impact on devices. Critical Reviews in Solid State and Materials Sciences 16:6, pages 417-435.
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S. Hasegawa, S. Shimizu & Y. Kurata. (1984) Thickness dependences of properties of P- and B-doped hydrogenated amorphous silicon. Philosophical Magazine B 49:5, pages 521-532.
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Articles from other publishers (29)

Y. H. D. Lee & M. Lipson. (2013) Back-End Deposited Silicon Photonics for Monolithic Integration on CMOS. IEEE Journal of Selected Topics in Quantum Electronics 19:2, pages 8200207-8200207.
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James T. McLeskeyJr.Jr. & Pamela M. Norris. (2003) Femtosecond transmission studies of n-type and p-type hydrogenated amorphous silicon pumped in the exponential band tails. Journal of Non-Crystalline Solids 318:3, pages 254-261.
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J.M. Méndez, S. Muhl, W.F. Pickin, A. Ortíz, J. Licea & R. Monroy. (1995) Optical properties of hydrogenated amorphous silicon films doped with fluorinated gases. Journal of Non-Crystalline Solids 180:2-3, pages 230-235.
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Kyung Ha Lee, Byeong Yeon Moon, Yoo Chan Chung, Seung Min Lee, Sung Chul Kim, Donggil Kim & Jin Jang. (2011) Effect of Ion Doping Temperature on Electrical Properties of APCVD A-Si. MRS Proceedings 345.
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Kyung Ha Lee, Byeong Yeon Moon, Yoo Chan Chung, Seung Min Lee, Sung Chul Kim, Donggil Kim & Jin Jang. (2011) Effect of Ion Doping Temperature on Electrical Properties of APCVD A-Si. MRS Proceedings 336.
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N.M. Johnson. (1991) Hydrogen in crystalline and amorphous silicon. Journal of Non-Crystalline Solids 137-138, pages 11-16.
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S.K Wong, N Du, P.K John & B.Y Tong. (1989) SIMS study of the concentration of dopants in LPCVD silicon thin films. Journal of Non-Crystalline Solids 110:2-3, pages 179-183.
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E. Grossman, A. Grill & M. Polak. (1989) Chemical bonding in microcrystalline Si:H:Cl films studied by ion-induced Auger Electron Spectroscopy. Thin Solid Films 173:1, pages L109-L114.
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J.M.T. Pereira. (1989) Electrical and optical properties of doped a-SiGe:H deposited by RF-sputtering. Electrical and optical properties of doped a-SiGe:H deposited by RF-sputtering.
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Shigenobu Hayashi, Kikuko Hayamizu, Satoshi Yamasaki, Akihisa Matsuda & Kazunobu Tanaka. (1988) Nuclear-magnetic-resonance study of amorphous silicon-hydrogen-phosphorus alloys. Physical Review B 38:1, pages 31-38.
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S. E. Ready & J. B. Boyce. (2011) NMR Investigation of the Local Dopant-Hydrogen Configuration in Amorphous Silicon. MRS Proceedings 95.
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E. Grossman, M. Polak & A. Grill. (1986) Electrical conductivity in microcrystalline Si:H:Cl films. Solar Energy Materials 13:6, pages 433-440.
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D. E. Carlson. (2011) Impurities and Metastable Centers in Amorphous Silicon Solar Cells. MRS Proceedings 70.
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J. Ristein & G. Weiser. (1985) Influence of doping on the optical properties and on the covalent bonds in plasma deposited amorphous silicon. Solar Energy Materials 12:3, pages 221-232.
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J. Zemek. (1984) XPS study of overlayer formation on a-Si (H) due to high dose ion implantation. Journal of Materials Science Letters 3:12, pages 1109-1111.
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S. G. Greenbaum, W. E. Carlos & P. C. Taylor. (1984) Local bonding arrangements of boron in doped hydrogenated amorphous silicon. Journal of Applied Physics 56:6, pages 1874-1877.
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W. Beyer. (1984) Doping effects in amorphous silicon. Journal of Non-Crystalline Solids 66:1-2, pages 1-12.
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Yoshiyuki Uchida. 1984. Hydrogenated Amorphous Silicon - Part A: Preparation and Structure. Hydrogenated Amorphous Silicon - Part A: Preparation and Structure 41 54 .
D.E. Carlson. 1984. Hydrogenated Amorphous Silicon - Part D: Device Applications. Hydrogenated Amorphous Silicon - Part D: Device Applications 7 37 .
David E. Carlson. 1984. The Physics of Hydrogenated Amorphous Silicon I. The Physics of Hydrogenated Amorphous Silicon I 203 244 .
J. I. Pankove, D. E. Carlson, J. E. Berkeyheiser & R. O. Wance. (1983) Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen. Physical Review Letters 51:24, pages 2224-2225.
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Jan Kočka, Milan Vaněček, Jiří Stuchlík, Igor Kubelík & Emil Šípek. (1983) Initial stage of growth of the GD a-Si:H. Journal of Non-Crystalline Solids 59-60, pages 763-766.
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Jeffrey A. Reimer & T. M. Duncan. (1983) Local bonding configuration of phosphorus in doped and compensated amorphous hydrogenated silicon. Physical Review B 27:8, pages 4895-4901.
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B. S. Meyerson, B. A. Scott & D. J. Wolford. (1983) The preparation of i n   s i t u doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition . Journal of Applied Physics 54:3, pages 1461-1465.
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J. Kočka, J. Stuchlík, M. Vaněček, I. Kubelík, O. Štika, D.I. Sloveckij & A.A. Ovsyannikov. (1983) Initial growth region of the glow discharge a-Si: H. Solid State Communications 45:8, pages 763-765.
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J. Allison & D. P. Turner. 1983. Photovoltaic Power Generation. Photovoltaic Power Generation 178 185 .
P. Hey & B.O. Seraphin. (1982) The role of hydrogen in amorphous silicon films deposited by the pyrolytic decomposition of silane. Solar Energy Materials 8:1-3, pages 215-230.
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D. E. Carlson & R. W. Smith. (1982) An investigation of microcrystalline films produced by a dc glow discharge in silane and hydrogen. Journal of Electronic Materials 11:4, pages 749-760.
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