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Philosophical Magazine B Volume 46, 1982 - Issue 2
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Original Articles

Thermoelectric power, hall effect and density-of-states measurements on glow-discharge microcrystalline silicon

G. Willeke Carnegie Laboratory of Physics, The University, Dundee DD1 4HN, Scotland
,
W. E. Spear Carnegie Laboratory of Physics, The University, Dundee DD1 4HN, Scotland
,
D. I. Jones Carnegie Laboratory of Physics, The University, Dundee DD1 4HN, Scotland
&
P. G. Le Comber Carnegie Laboratory of Physics, The University, Dundee DD1 4HN, Scotland
Pages 177-190 | Received 21 Dec 1981, Accepted 02 Mar 1982, Published online: 01 Dec 2006

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M. Konuma, H. Curtins, F.-A. Sarott & S. Vepřek. (1987) Dependence of electrical conductivity of nanocrystalline silicon on structural properties and the effect of substrate bias. Philosophical Magazine B 55:3, pages 377-389.
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S. Hasegawa, K. Kishi & Y. Kurata. (1985) Electrical properties and ESR of undoped microcrystalline Si with a preferential orientation. Philosophical Magazine B 52:2, pages 199-209.
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N.F. Mott. (1985) The pre-exponential factor in the conductivity of amorphous silicon. Philosophical Magazine B 51:1, pages 19-25.
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S. Hasegawa, S. Narikawa & Y. Kurata. (1983) ESR and electrical properties of P-doped microcrystalline Si. Philosophical Magazine B 48:5, pages 431-447.
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A.D. Stewart, D.I. Jones & G. Willeke. (1983) Electronic transport in glow-discharge microcrystalline germanium. Philosophical Magazine B 48:4, pages 333-340.
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Articles from other publishers (35)

Fan Ye, Rui-Tuo Hong, Yi-Bin Qiu, Yi-Zhu Xie, Dong-Ping Zhang, Ping Fan & Xing-Min Cai. (2022) Nanocrystalline ZnSnN2 Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells. Nanomaterials 13:1, pages 178.
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N. Elghoul, S. Kraiem, H. Rahmouni & K. Khirouni. (2019) Annealing effects on physical properties of a Au/a-Si:H Schottky diode prepared via the plasma-enhanced chemical vapor deposition technique. Journal of Physics and Chemistry of Solids 132, pages 18-25.
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H. Overhof & P. Thomas. 2001. Encyclopedia of Materials: Science and Technology. Encyclopedia of Materials: Science and Technology 270 277 .
P. Thomas & H. Overhof. 2001. Properties and Applications of Amorphous Materials. Properties and Applications of Amorphous Materials 261 290 .
S. Brehme, P. Kanschat & W. Fuhs. (2011) Barrier-Controlled Transport in Doped Microcrystalline Si. MRS Proceedings 609.
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M.B Schubert. (1999) Low temperature silicon deposition for large area sensors and solar cells. Thin Solid Films 337:1-2, pages 240-247.
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D Ruff, H Mell, L Tóth, I Sieber & W Fuhs. (1998) Charge transport in microcrystalline silicon films. Journal of Non-Crystalline Solids 227-230, pages 1011-1015.
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M. Heintze. (2011) Versatile High Rate Plasma Deposition and Processing with very high Frequency Excitation. MRS Proceedings 467.
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Mikio Taguchi, Yasuo Tsutsumi, Ravin N. Bhatt & Sigurd Wagner. (1996) Nanocrystalline silicon — from disordered insulator to dirty metal. Journal of Non-Crystalline Solids 198-200, pages 899-902.
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S. C. Saha & Swati Ray. (1995) Development of highly conductive n ‐type μ c ‐Si:H films at low power for device applications . Journal of Applied Physics 78:9, pages 5713-5720.
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Baojie Yan, Jianyong Liu, Xinhua Geng, Lifeng Shi, Zhonglin Sun & Wenyuan Xu. (1992) Measurement of electron density and mobility in P-d oped a-S i:H and mc-S i:H films. Physica Status Solidi (a) 130:1, pages 133-139.
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Gautam Ganguly, Subal C. De, Swati Ray & A. K. Barua. (1991) Polycrystalline silicon carbide films deposited by low?power radio?frequency plasma decomposition of SiF 4 ?CF 4 ?H 2 gas mixtures . Journal of Applied Physics 69:7, pages 3915-3923.
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G. Willeke, K. Prasad, R. Fischer, A. Shah & E. Bucher. 1991. Tenth E.C. Photovoltaic Solar Energy Conference. Tenth E.C. Photovoltaic Solar Energy Conference 135 138 .
G. Willeke, R. Fischer, E. Bucher, K. Prasad, H. Keppner & F. Finger. 1991. Polycrystalline Semiconductors II. Polycrystalline Semiconductors II 409 413 .
N. Du, Y. T. Zhu, B. Y. Tong & S. K. Wong. (1990) Observation of normal Hall coefficient of amorphous Si thin films prepared by low-pressure chemical-vapor deposition. Physical Review B 41:2, pages 1251-1253.
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N. Du, Y.T. Zhu, B.Y. Tong, P.K. John, S.K. Wong & K.P. Chik. (1989) Normal Hall coefficient of LPCVD amorphous silicon. Journal of Non-Crystalline Solids 114, pages 369-371.
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M.A. Hachicha & Etienne Bustarret. (2011) Transport Properties of B-, P-Doped and Undoped 50 kHz PECVD Microcrystalline Silicon. MRS Proceedings 164.
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S. Hasegawa, M. Segawa & Y. Kurata. (1988) Bonding and electrical properties of boron-doped microcrystalline SiN x :H films . Journal of Applied Physics 64:4, pages 1931-1938.
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Nevill F. Mott. (1987) Conduction at a mobility edge. Journal of Non-Crystalline Solids 97-98, pages 531-538.
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S. Vepřek, F.-A. Sarott & S. Rambert. (1987) Ion impact induced desorption study of the surface of plasma-deposited nanocrystalline silicon. Surface Science 189-190, pages 967-971.
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S. Hasegawa, M. Segawa & Y. Kurata. (1986) Wide-gap boron-doped microcrystalline silicon nitride. Applied Physics Letters 49:18, pages 1178-1180.
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H. Kiess, V. Augelli & R. Murri. (1986) Carrier lifetime from transient photoconductivity measurements on microcrystalline silicon films. Thin Solid Films 141:2, pages 193-199.
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Vincenzo Augelli, Teresa Ligonzo, Roberto Murri & Luigi Schiavulli. (1985) Effects of the dopants on the electrical conductivity and hall mobility in Si: H, Cl films. Thin Solid Films 125:1-2, pages 9-16.
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S. Nishida, M. Konagai & K. Takahashi. (1984) Seebeck and piezoresistance effects in amorphous-microcrystalline mixed-phase silicon films and applications to power sensors and strain gauges. Thin Solid Films 112:1, pages 7-16.
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P.G. LeComber & W.E. Spear. 1984. Hydrogenated Amorphous Silicon - Part D: Device Applications. Hydrogenated Amorphous Silicon - Part D: Device Applications 89 114 .
G.J. Smith & W.I. Milne. (1984) The efficiency of gas usage in glow-discharge deposition of hydrogenated amorphous silicon. Solar Energy Materials 9:4, pages 459-470.
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Walter E. Spear & Peter G. LeComber. 1984. The Physics of Hydrogenated Amorphous Silicon I. The Physics of Hydrogenated Amorphous Silicon I 63 118 .
G. Rajeswaran, F. J. Kampas, P. E. Vanier, R. L. Sabatini & J. Tafto. (1983) Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloys. Applied Physics Letters 43:11, pages 1045-1047.
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P.G. Lecomber, W.E. Spear, R.A. Gibson, H. Mannsperger & F. Djamdji. (1983) An investigation of some fundamental properties of a-Si from measurements of interface and surface effects. Journal of Non-Crystalline Solids 59-60, pages 505-508.
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P.G. Lecomber, G. Willeke & W.E. Spear. (1983) Some new results on transport and density of state distribution in glow discharge microcrystalline silicon. Journal of Non-Crystalline Solids 59-60, pages 795-798.
Crossref
S Veprek, Z Iqbal, R O Kuhne, P Capezzuto, F -A Sarott & J K Gimzewski. (1983) Properties of microcrystalline silicon. IV. Electrical conductivity, electron spin resonance and the effect of gas adsorption. Journal of Physics C: Solid State Physics 16:32, pages 6241-6262.
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K. D. Mackenzie, A. J. Snell, I. French, P. G. LeComber & W. E. Spear. (1983) The characteristics and properties of optimised amorphous silicon field effect transistors. Applied Physics A Solids and Surfaces 31:2, pages 87-92.
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G. Rajeswaran, J. Tafto, R. L. Sabatini & P. E. Vanier. (2011) Crystallinity, Morphology, and Conductivity of Boron-Doped Microcrystalline Silicon. MRS Proceedings 31.
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G. Rajeswaran, P. E. Vanier, F. J. Kampas & R. R. Corderman. (2011) Low Temperature (150–250°C) Deposition of n + and p + Microcrystalline Silicon for VLSI Device Contacts . MRS Proceedings 25.
Crossref
M. H. Brodsky. 1985. Amorphous Semiconductors. Amorphous Semiconductors 331 343 .

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