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Philosophical Magazine B Volume 46, 1982 - Issue 3
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Original Articles

Thickness dependence of electrical and optical properties and E.S.R. in undoped a-Si: H

S. Hasegawa Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa, 920, Japan
&
Y. Imai Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa, 920, Japan
Pages 239-251 | Received 15 Feb 1982, Published online: 01 Dec 2006

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Meifang Zhu & H. Fritzsche. (1986) Density of states and mobility—lifetime product in hydrogenated amorphous silicon, from thermostimulated conductivity and photoconductivity measurements. Philosophical Magazine B 53:1, pages 41-54.
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S. Hasegawa, S. Shimizu & Y. Kurata. (1984) Thickness dependences of properties of P- and B-doped hydrogenated amorphous silicon. Philosophical Magazine B 49:5, pages 521-532.
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S. Hasegawa, S. Shimizu & Y. Kurata. (1984) Thickness dependences of properties of P- and B-doped hydrogenated amorphous silicon. Philosophical Magazine B 49:5, pages 511-519.
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E. Sacher, J. Klemberg-Sapiehat, M.R. Wertheimer, H.P. Schreiber & R. Groleau. (1984) Surface contributions to the two-layer structure in the plasma deposition of a-Si : H. Philosophical Magazine B 49:4, pages L47-L52.
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S. Hasegawa, D. Ando, Y. Kurata & T. Shimizu. (1983) Plasma-hydrogenation effects and the thickness dependence of electrical properties and E.S.R. in undoped CVD a-Si. Philosophical Magazine B 47:2, pages 139-149.
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Articles from other publishers (43)

Jia-Long Hong, Chia-Ming Yang, Po-Yu Chu, Wen-Pin Chou, Chia-Jung Liao, Chia-Hsun Hsieh, Min-Hsien Wu & Ping-Hei Chen. (2019) The effect of operating conditions on the optically induced electrokinetic (OEK)-based manipulation of magnetic microbeads in a microfluidic system. Sensors and Actuators B: Chemical 296, pages 126610.
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Mahmoud H. Elshorbagy & Javier Alda. (2017) Funneling and guiding effects in ultrathin aSi-H solar cells using one-dimensional dielectric subwavelength gratings. Journal of Photonics for Energy 7:1, pages 017002.
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Alex Kuo, Tae Kyung Won & Jerzy Kanicki. (2008) Advanced Multilayer Amorphous Silicon Thin-Film Transistor Structure: Film Thickness Effect on Its Electrical Performance and Contact Resistance. Japanese Journal of Applied Physics 47:5R, pages 3362.
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R Br$uuml$ggemann, C Main & S Reynolds. (2002) Depth profiling in amorphous and microcrystalline silicon by transient photoconductivity techniques. Journal of Physics: Condensed Matter 14:28, pages 6909-6915.
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Chun‐Sung Chiang, Sandrine Martin, Jeong‐Yeop Nahm, Jerzy Kanicki, Yasuhiro Ugai, Teizo Yukawa & Shu Takeuchi. (2012) High‐performance top‐gate a‐Si:H TFTs for AMLCDs. SID Symposium Digest of Technical Papers 29:1, pages 383-386.
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G. Fameli, D. Della Sala, F. Roca & C. Gerardi. (1996) Characterisation of thin amorphous silicon films with multiple internal reflectance spectroscopy. Journal of Non-Crystalline Solids 198-200, pages 69-72.
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Giuseppe Fameli, Dario della Sala, Francesco Roca, Francesco Pascarella & Pietro Grillo. (1995) Characterization of thin amorphous silicon films with multiple internal reflectance spectroscopy. Journal of Applied Physics 78:12, pages 7269-7276.
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M. Katiyar, G. F. Feng, Y. H. Yang, J. R. Abelson & N. Maley. (1993) Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy. Applied Physics Letters 63:4, pages 461-463.
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N. Maley. (1992) Critical investigation of the infrared-transmission-data analysis of hydrogenated amorphous silicon alloys. Physical Review B 46:4, pages 2078-2085.
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A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford & N. Maley. (1992) Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon. Physical Review B 45:23, pages 13367-13377.
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K. Eberhardt, E. Lotter, M. Heintze, H.-D. Mohring & G.H. Bauer. (2011) Structural Properties of High Electronic Quality a-Si 1-x C x :H by Infrared Spectroscopy . MRS Proceedings 258.
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R.M. Dawson, Y.M. Li, M. Gunes, D. Heller, S. Nag, R.W. Collins, C.R. Wronski, M. Bennett & Y.M. Li. (2011) Optical Properties of Hydrogenated Amorphous Silicon, Silicon-Germanium and Silicon-Carbon Thin Films. MRS Proceedings 258.
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Y. M. Li, R. M. Dawson, R. W. Collins, C. R. Wronski & S. Wiedeman. (1991) Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films. Applied Physics Letters 59:20, pages 2549-2551.
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A. Asano & M. Stutzmann. (1991) Depth profiling of nonuniform optical absorption in thin films: Application to hydrogenated amorphous silicon. Journal of Applied Physics 70:9, pages 5025-5034.
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Homer Antoniadis & E. A. Schiff. (1991) Isotropy of drift mobilities in hydrogenated amorphous silicon. Physical Review B 44:8, pages 3627-3637.
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Sukriti Ghosh & Gautam Ganguly. (1990) Effect of light soaking on the short-wavelength photoresponse in hydrogenated amorphous silicon. Journal of Applied Physics 68:11, pages 5896-5898.
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N. Maley & I. Szafranek. (2011) Systematic Errors in the Analysis of the Infrared Transmission Data Of Hydrogenated Amorphous Silicon. MRS Proceedings 192.
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Yoshihiro Hishikawa, Michitoshe Ohnishi & Yukinori Kuwano. (2011) Achievement of More than 10% Efficiency for a Single-Junction 100cm 2 a-Si Solar Cell and Development of a New-Type Module Structure . MRS Proceedings 192.
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J. Sopka, U. Schneider, B. Schroder, M. Favre, F. Finger & H. Oechsner. (1989) The influence of the film-substrate interface on the defect density and other properties of sputter-deposited amorphous hydrogenated silicon. IEEE Transactions on Electron Devices 36:12, pages 2848-2852.
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V. Chacorn & D. Haneman. (1988) Thickness and doping dependence of the optical gap in amorphous hydrogenated silicon films. Solid State Communications 65:7, pages 609-611.
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C. Manfredotti & K. K. Sharma. (2011) On the Role of Inversion Layer, Electronic Density of States and Interfacial Layer on the Barrier Height Formation of Amorphous-Silicon Schottky Diodes. MRS Proceedings 118.
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J.-C. Charenton, E. Sacher & N.S. McIntyre. (1988) The surface characterization of the atmospheric contamination of hydrogenated amorphous silicon. Solar Energy Materials 17:1, pages 17-23.
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L. J. Pilione, K. Vedam, J. E. Yehoda, R. Messier & P. J. McMarr. (1987) Thickness dependence of optical gap and void fraction for sputtered amorphous germanium. Physical Review B 35:17, pages 9368-9371.
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Jerzy Kanicki. (2011) Metal / Hydrogenated Amorphous Silicon Interfaces. MRS Proceedings 95.
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P. J. McMarr, J. R. Blanco, K. Vedam, R. Messier & L. Pilione. (1986) Thickness-dependent void fraction of rf-sputtered amorphous Ge films by spectroscopic ellipsometry. Applied Physics Letters 49:6, pages 328-330.
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Gy. Zentai & M. Füstöss-Wégner. (1985) Microinhomogeneities in glow discharge deposited aSi:H layers. Journal of Non-Crystalline Solids 77-78, pages 225-228.
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F. Boulitrop, N. Proust, J. Magariño, E. Criton, J. F. Peray & M. Dupre. (1985) A study of hydrogenated amorphous silicon deposited by hot-wall glow discharge. Journal of Applied Physics 58:9, pages 3494-3498.
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A. Werner, M. Kunst, G. Beck, J. Lilie & H. Tributsch. (1985) “In situ” measurements of the transient photoconductivity in a-Si:H. Solid State Communications 56:1, pages 127-129.
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M. Stutzmann, W. B. Jackson & C. C. Tsai. (1985) Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. Physical Review B 32:1, pages 23-47.
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J. Ristein & G. Weiser. (1985) Influence of doping on the optical properties and on the covalent bonds in plasma deposited amorphous silicon. Solar Energy Materials 12:3, pages 221-232.
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R. Swanepoel, P.L. Swart & Herzl Aharoni. (1985) Influence of argon partial pressure on the electrical and optical properties of sputtered hydrogenated amorphous silicon. Thin Solid Films 128:3-4, pages 191-203.
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Helmut Dersch, Andrew Skumanich & Nabil M. Amer. (1985) Influence of dangling-bond defects on recombination in a -Si:H . Physical Review B 31:10, pages 6913-6916.
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Gary A. Pollock. (2011) Hydrogen Measurement of Thin Film Silicon: Hydrogen Alloy Films Technique Comparison. MRS Proceedings 48.
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J.B. Boyce & M.J. Thompson. (1984) Thickness dependence of the properties of plasma-deposited a-Si:H films — NMR studies. Journal of Non-Crystalline Solids 66:1-2, pages 127-132.
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P.C. Taylor. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 99 154 .
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G. Moller, G. Winterling, S. Kalbitzer & M. Reinelt. (1983) Hydrogen incorporation, doping and thickness dependent conductivity in glow discharge deposited a-Si:H films. Journal of Non-Crystalline Solids 59-60, pages 469-472.
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Bernard Ranchoux, Didier Jousse, Jean-Claude Bruyere & Alain Deneuville. (1983) Thickness dependent properties of sputtered a-Si:H from Raman and conductivity measurement. Journal of Non-Crystalline Solids 59-60, pages 185-188.
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S.H. Yang & Choochon Lee. (1983) Thickness dependence of kink temperature and band bending in amorphous silicon. Physics Letters A 96:1, pages 36-38.
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