Citations (32)
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Read on this site (11)
J.M. Marshall. (2000) The interpretation of pulsed-excitation transient photoconductivity in disordered semiconductors. Philosophical Magazine B 80:9, pages 1705-1726.
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V.I. Arkhipov & G.J. Adriaenssens. (1997) Trap-controlled dispersive transport in systems of randomly fluctuating localized states. Philosophical Magazine B 76:1, pages 11-22.
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J.M. Marshall, R.A. Street, M.J. Thompson & W.B. Jackson. (1988) Hole carrier drift-mobility measurements in a-Si: H, and the shape of the valence-band tail. Philosophical Magazine B 57:3, pages 387-397.
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Benyuan Gu & Zhengyi Xu. (1987) Determination of the density of localized electronic states in some amorphous semiconductors from the transient photocurrent. Philosophical Magazine B 55:3, pages 391-400.
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J.M. Marshall, R.P. Barclay, C. Main & C. Dunn. (1985) The transient photodecay process and its interpretation in the case of disordered single crystals of arsenic triselenide. Philosophical Magazine B 52:5, pages 997-1004.
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V. Halpern. (1985) The decay rate of transient photocurrents in semiconductors. Philosophical Magazine B 52:4, pages L75-L79.
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E.A. Davis, H. Michiel & G.J. Adriaenssens. (1985) Tail-state distribution and extended-state mobility in a-Si:H. Philosophical Magazine B 52:3, pages 261-270.
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J. Weissmüller. (1985) Determination of localized state distributions in amorphous semiconductors from excess charge carrier thermalization. Philosophical Magazine B 51:3, pages 349-361.
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H. Michiel & G.J. Adriaenssens. (1985) Analysis of dispersive transport in amorphous semiconductors by discretization of a continuous distribution of localized states. Philosophical Magazine B 51:1, pages 27-38.
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Articles from other publishers (21)
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Takashi Nagase, Ko-hei Kishimoto & Hiroyoshi Naito. (1999) High resolution measurement of localized-state distributions from transient photoconductivity in amorphous and polymeric semiconductors. Journal of Applied Physics 86:9, pages 5026-5035.
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D. P. Webb, C. Main, S. Reynolds, Y. C. Chan, Y. W. Lam & S. K. O’Leary. (1998) Effects of bandwidth limitations on the localized state distribution calculated from transient photoconductivity data. Journal of Applied Physics 83:9, pages 4782-4787.
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S. Usala, G.J. Adriaenssens, Ö. Öktü & M. Nesladek. (1991) Post-transit-time analysis of time-of-flight photocurrents. Applied Surface Science 50:1-4, pages 265-268.
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J.M. Marshall, C. Pickup, A. Browne, J. McNeil, C. Hotham, C. Main & J. Berkin. (1989) Band tail states in a-Si:H — influence of preparation conditions and techniques for characterisation. Journal of Non-Crystalline Solids 114, pages 339-341.
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G. F. Seynhaeve, R. P. Barclay, G. J. Adriaenssens & J. M. Marshall. (1989) Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous silicon. Physical Review B 39:14, pages 10196-10205.
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E. Muller-Horsche, D. Haarer & H. Scher. (1987) Transition from dispersive to nondispersive transport: Photoconduction of polyvinylcarbarzole. Physical Review B 35:3, pages 1273-1280.
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H. Michiel, G. J. Adriaenssens & E. A. Davis. (1986)
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Hiroyoshi Naito, Masafumi Nakaishi, Tatsuhiko Matsushita & Masahiro Okuda. (1985) Gap state spectroscopy in amorphous As2Se3 films. Journal of Non-Crystalline Solids 77-78, pages 1183-1186.
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J.M. Marshall. (1985) Excess carrier thermalisation phenomena in amorphous materials and devices. Journal of Non-Crystalline Solids 77-78, pages 425-434.
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G. Seynhaeve, G.J. Adriaenssens & H. Michiel. (1985) On the density of localized states obtainable from transient photodecay measurements. Solid State Communications 56:4, pages 323-326.
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J. M. Marshal & R. P. Barclay. 1985. Physics of Disordered Materials. Physics of Disordered Materials
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A. P. Tyutnev, P. I. Dubenskov, V. S. Saenko & A. V. Vannikov. (1984) Radiation-Induced Conductivity of Poly- (N-Vinylcarbazole) and Poly - (N-Epoxypropylcarbazole). Physica Status Solidi (a) 84:2, pages 585-596.
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J.M. Marshall & R.A. Street. (1984) On the sensitivity of transient photodecay measurements as a probe of localised state distributions in amorphous semiconductors. Solid State Communications 50:2, pages 91-95.
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