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Philosophical Magazine B Volume 49, 1984 - Issue 6
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Original Articles

Studies of the frequency-dependent admittances of Schottky barriers formed on sputtered hydrogenated amorphous silicon

I. G. Gibb Department of Natural Philosophy, University of Glasgow, Glasgow, G12 8QQ, Scotland; Thorn EMI Central Research Laboratories, Trevor Road, Hayes, Middlesex, England
&
A. R. Long Department of Natural Philosophy, University of Glasgow, Glasgow, G12 8QQ, Scotland
Pages 565-595 | Received 31 Jan 1983, Accepted 16 Jan 1984, Published online: 02 Sep 2006

Citations (29)

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Read on this site (4)

A.R. Long. (1989) The frequency response of an inhomogeneous amorphous semiconductor. Philosophical Magazine B 59:3, pages 377-386.
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I.W. Archibald & R.A. Abram. (1986) More theory of the admittance of an amorphous silicon Schottky barrier. Philosophical Magazine B 54:5, pages 421-438.
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K. Shimakawa, A. Watanabe, K. Hattori & O. Imagawa. (1986) Frequency-dependent transport in glow-discharge amorphous silicon. Philosophical Magazine B 54:5, pages 391-414.
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A.R. Long, W.R. Hogg, M.C. Holland, N. Balkan & R.P. Ferrier. (1985) Frequency-dependent loss in sputtered amorphous germanium films Measurements at low temperatures. Philosophical Magazine B 51:1, pages 39-54.
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Articles from other publishers (25)

K. Wieland, A. Vasko & V. G. Karpov. (2013) Multi-dimensional admittance spectroscopy. Journal of Applied Physics 113:2.
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M. Nardone & V. G. Karpov. (2008) Admittance characterization of semiconductor junctions. Journal of Applied Physics 103:8.
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S. Guessasma & M. Chahdi. (2004) The Study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique. Materials Science in Semiconductor Processing 7:4-6, pages 411-417.
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V. G. Karpov, Diana Shvydka, U. Jayamaha & A. D. Compaan. (2003) Admittance spectroscopy revisited: Single defect admittance and displacement current. Journal of Applied Physics 94:9, pages 5809-5813.
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F.T. Reis, D. Mencaraglia, S. Oould Saad, I. Séguy, M. Oukachmih, P. Jolinat & P. Destruel. (2003) Characterization of ITO/CuPc/AI and ITO/ZnPc/Al structures using optical and capacitance spectroscopy. Synthetic Metals 138:1-2, pages 33-37.
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D. Mencaraglia, S. Ould Saad & Z. Djebbour. (2003) Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In,Ga)Se2 and a-Si:H cases. Thin Solid Films 431-432, pages 135-142.
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D. Shvydka, U. Jayamaha, V.G. Karpov & A.D. Compaan. (2002) Capacitance - frequency analysis of CdTe photovoltaics. Capacitance - frequency analysis of CdTe photovoltaics.
L Pereira, A Rodrigues, H Gomes & E Pereira. (2001) Electrical AC behaviour of MPCVD diamond Schottky diodes. Diamond and Related Materials 10:3-7, pages 615-619.
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D. Grecu, U. Jayamaha, G. Rich & V.G. Karpov. (2000) Admittance spectroscopy of CdTe-based solar cells. Admittance spectroscopy of CdTe-based solar cells.
I. Musa & W. Eccleston. (1999) Dielectric properties of regioregular poly(3-alkylthiophene) films. Synthetic Metals 101:1-3, pages 598-599.
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F. Fernández Gutiérrez, A. R Ruiz-Salvador, J.-C M'Peko & M. Hernández Vélez. (1998) Proton mobility calculations in the presence of negative capacitances. Europhysics Letters (EPL) 44:2, pages 211-215.
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G.L. Kong, D.L. Zhang, G.Z. Yue, Y.Q. Wang & X.B. Liao. (2011) Light-Excited Structural Instability of a-Si:H. MRS Proceedings 507.
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F. Lemmi & N. M. Johnson. (2011) Small-Signal Admittance of Forward-Biased a-Si:H p + -i-n + Diodes by Time Domain Analysis . MRS Proceedings 507.
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T. J. Phillips & N. T. Gordon. (1996) Negative diffusion capacitance in auger-Suppressed HgCdTe heterostructure diodes. Journal of Electronic Materials 25:8, pages 1151-1156.
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D M Taylor & H L Gomes. (1995) Electrical characterization of the rectifying contact between aluminium and electrodeposited poly(3-methylthiophene). Journal of Physics D: Applied Physics 28:12, pages 2554-2568.
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F. Fernandez-Gutierrez, E. Gonzalez-Perez, A. Berazain-Iturralde, M. Hernandez-Velez & J.M. Albella. (1995) Phenomenological approach to the physical interpretation of the negative capacities in zeolites. Phenomenological approach to the physical interpretation of the negative capacities in zeolites.
P. Garikepati & T. Xue. (1992) Charge transport in a-Si: H PIN solar cells under AC excitation. Solar Energy Materials and Solar Cells 27:1, pages 69-77.
Crossref
A. Tabata, K. Tomiita, Y. Suzuoki & T. Mizutani. 1992. Amorphous and Crystalline Silicon Carbide IV. Amorphous and Crystalline Silicon Carbide IV 245 251 .
J.P. Kleider, D. Mencaraglia & Z. Djebbour. (1989) A new treatment of Schottky barrier capacitance-voltage characteristics: Discussion of usual assumptions and determination of the deep gap states density in a-Si1−xGex:H alloys. Journal of Non-Crystalline Solids 114, pages 432-434.
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A.R. Long. (1989) The influence of long range potential fluctuations on frequency dependent transport in aSi:H. Journal of Non-Crystalline Solids 114, pages 348-350.
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S H Zaidi & A K Jonscher. (1987) Spectroscopy of delayed electronic transitions in GaAs Schottky diodes. Semiconductor Science and Technology 2:9, pages 587-596.
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A K Jonscher, C Pickup & S H Zaidi. (1986) Dielectric spectroscopy of semi-insulating gallium arsenide. Semiconductor Science and Technology 1:1, pages 71-92.
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D. Mencaraglia, A. Amaral & J. P. Kleider. (1985) Admittance frequency dependence of Schottky barriers formed on dc triode sputtered amorphous silicon: Hydrogen influence on deep gap state characteristics. Journal of Applied Physics 58:3, pages 1292-1301.
Crossref
K. Shimakawa, A. Watanabe & O. Imagawa. (1985) a.c. Conduction originated from the atomic two-levels systems in hydrogenated amorphous silicon. Solid State Communications 55:3, pages 245-248.
Crossref
T. Tiedje. 1985. Physics of Disordered Materials. Physics of Disordered Materials 461 467 .

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