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Philosophical Magazine B Volume 49, 1984 - Issue 5
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Letters section

Electronic and optical properties of glow-discharge amorphous silicon-carbon alloys

J. Bullot Laboratoire des Matériaux Amorphes (LA 75), Université Paris-Sud, Bǎtiment 490, 91405, Orsay Cedex, France
,
M. Gauthier Laboratoire des Matériaux Amorphes (LA 75), Université Paris-Sud, Bǎtiment 490, 91405, Orsay Cedex, France
,
M. Schmidt Laboratoire des Matériaux Amorphes (LA 75), Université Paris-Sud, Bǎtiment 490, 91405, Orsay Cedex, France
,
Y. Catherine Laboratoire de Physique Corpusculaire, ERA 924, 2 rue de la Houssinière, 44072, Nantes Cedex, France
&
A. Zamouche Laboratoire de Physique Corpusculaire, ERA 924, 2 rue de la Houssinière, 44072, Nantes Cedex, France
Pages 489-501 | Received 23 Sep 1983, Accepted 05 Nov 1983, Published online: 20 Aug 2006

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R. Reitano, A. Baeri & G. Foti. (2001) Light-induced creation of metastable defects in hydrogenated amorphous silicon carbide. Philosophical Magazine B 81:6, pages 629-636.
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Giuseppina Ambrosone, Pio Capezzuto, Sergio Catalanotti, Ubaldo Coscia & Salvatore Mormone. (2000) Optical, electrical and structural properties of hydrogenated amorphous Si-C alloys deposited by different hydrocarbon gas mixtures. Philosophical Magazine B 80:4, pages 497-506.
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F. Giorgis, C.F. Pirri, E. Tresso & P. Rava. (1997) Correlation between the optoelectronic properties and the structure of hydrogenated amorphous silicon-carbon films grown from a C2H2 gas source. Philosophical Magazine B 75:4, pages 471-483.
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F. Demichelis, F. Giorgis, C.F. Pirri & E. Tresso. (1995) Compositional and structural properties of hydrogenated amorphous silicon-carbon films prepared by ultra-high-vacuum plasma-enhanced chemical vapour deposition with different carbon sources. Philosophical Magazine A 72:4, pages 913-929.
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I. Nakaaki, N. Saito, Y. Inui, S. Yoshioka & S. Nakamura. (1993) Enhancement of photoconductivity in r.f. glow-discharge-deposited a-SiC: H films doped with nitrogen. Philosophical Magazine B 68:1, pages 55-65.
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N. Saito, Y. Tomioka, H. Senda, T. Yamaguchi & K. Kawamura. (1990) Doping effects of aluminium on the properties of hydrogenated amorphous silicon–carbon alloy films prepared by magnetron sputtering. Philosophical Magazine B 62:5, pages 527-536.
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S.H. Baker, W.E. Spear & R.A. G. Gibson. (1990) Electronic and optical properties of a-Si1-xCx films prepared from a H2-diluted mixture of SiH4 and CH4 . Philosophical Magazine B 62:2, pages 213-223.
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N. Saito. (1987) Properties of hydrogenated and fluorinated amorphous silicon–carbon alloy films prepared by magnetron sputtering. Philosophical Magazine B 55:5, pages 615-625.
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M. Meaudre & R. Meaudre. (1987) Influence of nitrogen incorporation on the density of gap states in amorphous hydrogenated silicon. Philosophical Magazine B 55:3, pages 417-426.
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F. Maury, G. Constant, D. Jousse & A. Deneuville. (1986) Optical and electrical properties of the disordered composite semiconductor (GaAs)1−x (SiC2 : H)x, grown by metal-organic chemical vapour deposition. Philosophical Magazine B 53:5, pages 445-457.
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N. Saito, T. Yamada, T. Yamaguchi, I. Nakaaki & N. Tanaka. (1985) Structural, optical and electronic properties of amorphous SiC: H alloys prepared by magnetron sputtering of silicon in methane-argon gas mixtures. Philosophical Magazine B 52:5, pages 987-995.
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M.P. Schmidt, J. Bullot, M. Gauthier, P. Cordier, I. Solomon & H. Tran-Quoc. (1985) Influence of carbon incorporation in amorphous hydrogenated silicon. Philosophical Magazine B 51:6, pages 581-589.
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R. Meaudre & A. Mezhoudi. (1984) Conduction-band tail width and minimum metallic conductivity in a-SixN1−x:H films studied by photoconduction and optical absorption. Philosophical Magazine B 50:6, pages L63-L67.
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Wei Yu, Wanbing Lu, Li Han & Guangsheng Fu. (2004) Structural and optical properties of hydrogenated amorphous silicon carbide films by helicon wave plasma-enhanced chemical vapour deposition. Journal of Physics D: Applied Physics 37:23, pages 3304-3308.
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