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Philosophical Magazine B Volume 49, 1984 - Issue 5
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Letters section

Thickness dependences of properties of P- and B-doped hydrogenated amorphous silicon

I. Dark conductivity and photoconductivity

S. Hasegawa Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa, 920, Japan
,
S. Shimizu Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa, 920, Japan
&
Y. Kurata Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa, 920, Japan
Pages 511-519 | Received 16 Aug 1983, Accepted 17 Nov 1983, Published online: 20 Aug 2006

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A. Desalvo, F. Zignani, R. Galloni, R. Rizzoli & M. Ruth. (1993) Doping of amorphous silicon by potassium ion implantation. Philosophical Magazine B 67:1, pages 131-142.
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O. Bonnaud, M. Sahnoune & A. El Gharib. (1990) Effects of the emitter conductivity on the electrical behaviour of an a-Si:H/c-Si HBT. Philosophical Magazine B 62:1, pages 89-97.
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G. Müller, H. Mannsperger & S. Kalbitzer. (1986) Substitutional doping of amorphous silicon a comparison of different doping mechanisms. Philosophical Magazine B 53:4, pages 257-268.
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S. Hasegawa, S. Shimizu & Y. Kurata. (1984) Thickness dependences of properties of P- and B-doped hydrogenated amorphous silicon. Philosophical Magazine B 49:5, pages 521-532.
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Articles from other publishers (22)

A. G. Kazanskiĭ, O. G. Koshelev, A. Yu. Sazonov & A. A. Khomich. (2011) Photoconductivity of thin a-Si:H films. Semiconductors 42:2, pages 192-194.
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M.S. Aida, F. Youla, N. Touafek, D. Nebti & A. Benzagoutta. (2002) Light induced defects in sputtered amorphous silicon thin films. Materials Chemistry and Physics 74:3, pages 251-257.
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G. Fameli, D. Della Sala, F. Roca & C. Gerardi. (1996) Characterisation of thin amorphous silicon films with multiple internal reflectance spectroscopy. Journal of Non-Crystalline Solids 198-200, pages 69-72.
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Giuseppe Fameli, Dario della Sala, Francesco Roca, Francesco Pascarella & Pietro Grillo. (1995) Characterization of thin amorphous silicon films with multiple internal reflectance spectroscopy. Journal of Applied Physics 78:12, pages 7269-7276.
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M.S. Aida & R. Bachiri. (1995) The surface properties of sputtered amorphous silicon thin films. Journal of Non-Crystalline Solids 189:1-2, pages 167-172.
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A. Rubino, M.L. Addonizio, G. Conte, G. Nobile, E. Terzini & A. Madan. (1993) Physical Properties of P and B Doped Microcrystalline Si:H Deposited by PECVD. MRS Proceedings 297.
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G. Morell, R.S. Katiyar, S.Z. Weisz, M. Gomez & I. Balberg. (1993) Inhomogeneity in the Network Order of Device Quality a-Si:H. MRS Proceedings 297.
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T. Bekkay, K. Piyakis, Y. Diawara, E. Sacher, A. Yelon & J.F. Currie. (1991) Band bending and Fermi level shifts in phosphorus-doped hydrogenated amorphous silicon studied by X-ray photoelectron spectroscopy. Surface Science 258:1-3, pages 190-196.
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L. Chahed, M. L. Thèye, D. Fournier, J. P. Roger, A. C. Boccara, Y. M. Li, W. A. Turner & W. Paul. (1991) Surface effects in hydrogenated amorphous silicon studied by photothermal-deflection experiments. Physical Review B 43:18, pages 14488-14497.
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R. Rizzoli, C. Summonte, R. Galloni, F. Zignani & A. Nylandsted Larsen. 1991. Tenth E.C. Photovoltaic Solar Energy Conference. Tenth E.C. Photovoltaic Solar Energy Conference 1072 1074 .
Yoshihiro Hishikawa, Sadaji Tsuge, Noboru Nakamura, Shinya Tsuda, Shoichi Nakano & Yukinori Kuwano. (1990) Effect of substrates and film thickness on the structural, optical, and electrical properties of hydrogenated amorphous silicon films. Applied Physics Letters 57:8, pages 771-773.
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Z. M. Qian, A. Van Ammel, H. Michiel, J. Nijs & R. Mertens. (1990) Preparation of hydrogenated amorphous silicon with tunable gap by homogeneous chemical vapor deposition. Journal of Applied Physics 68:1, pages 143-155.
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O.S. Panwar, P.N. Dixit, Ajay Tyagi, Tanay Seth, B.S. Satyanarayan, R. Bhattacharyya & V.V. Shah. (1989) Electrical properties of boron-doped hydrogenated amorphous silicon films prepared by glow discharge decomposition in dilute silane. Thin Solid Films 176:1, pages 79-90.
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J. Sopka, U. Schneider, B. Schroder, M. Favre, F. Finger & H. Oechsner. (1989) The influence of the film-substrate interface on the defect density and other properties of sputter-deposited amorphous hydrogenated silicon. IEEE Transactions on Electron Devices 36:12, pages 2848-2852.
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Tatsuo Shimizu, Xixiang Xu, Hideo Kidoh, Akiharu Morimoto & Minoru Kumeda. (1988) Surface and bulk defects in hydrogenated amorphous silicon and silicon‐based alloy films. Journal of Applied Physics 64:10, pages 5045-5049.
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J I B Wilson, S K Al-Sabbagh & W Z Manookian. (1988) Planar and transverse electrical conductivity of doped a-Si:H. Semiconductor Science and Technology 3:10, pages 1037-1040.
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Ya-Gu James Ye, W.A. Anderson & Y.S. Tsuo. (1988) Thickness dependence of photoelectrical properties of intrinsic amorphous silicon. Solar Cells 23:3-4, pages 191-199.
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S. Hasegawa, T. Tsukao & P. C. Zalm. (1987) Bonding and electronic structures of amorphous SiN x :H . Journal of Applied Physics 61:8, pages 2916-2920.
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H. Mannsperger, S. Kalbitzer & G. M�ller. (1986) Doping efficiencies of gas-phase and ion-implantation doped a-Si:H. Applied Physics A Solids and Surfaces 41:4, pages 253-258.
Crossref
N. Fukada, Y. Hosokawa, M. Yamaguchi, J. Takada, M. Kondo, K. Nishimura & Y. Tawada. (1985) Characterization of thin P-layer in pin hetero-junction solar cells. Journal of Non-Crystalline Solids 77-78, pages 1477-1480.
Crossref
G. M?ller, H. Mannsperger & S. Kalbitzer. (1985) On the auto-compensation mechanism in amorphous silicon. Journal of Non-Crystalline Solids 77-78, pages 435-438.
Crossref
Gy. Zentai & M. Füstöss-Wégner. (1985) Microinhomogeneities in glow discharge deposited aSi:H layers. Journal of Non-Crystalline Solids 77-78, pages 225-228.
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