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Letters section

Thickness dependences of properties of P- and B-doped hydrogenated amorphous silicon

II. ESR, hydrogen vibrational spectra and optical absorption

, &
Pages 521-532 | Received 16 Aug 1983, Accepted 17 Nov 1983, Published online: 20 Aug 2006

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S.H. Yang & Choochon Lee. (1986) Mechanism of the high-temperature conductivity kinks in hydrogenated amorphous silicon. Philosophical Magazine B 53:4, pages 293-300.
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S. Gangopadhyay, S. Iselborn, H. Rübel, B. Schröder & J. Geiger. (1985) Density of states study of sputtered and evaporated a-Si: H by space-charge-limited current technique. Philosophical Magazine B 51:3, pages L33-L38.
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S. Hasegawa, S. Shimizu & Y. Kurata. (1984) Thickness dependences of properties of P- and B-doped hydrogenated amorphous silicon. Philosophical Magazine B 49:5, pages 511-519.
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Articles from other publishers (16)

Yifeng Zhao, Luana Mazzarella, Paul Procel, Can Han, Frans D. Tichelaar, Guangtao Yang, Arthur Weeber, Miro Zeman & Olindo Isabella. (2021) Ultra‐thin electron collectors based on nc‐Si:H for high‐efficiency silicon heterojunction solar cells. Progress in Photovoltaics: Research and Applications 30:8, pages 809-822.
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S.Z. Weisz, J. Avalos, M. Gomez, A. Many, Y. Goldstein & E. Savir. (1995) Surface states on amorphous silicon. Surface Science 338:1-3, pages 117-124.
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M.S. Aida & R. Bachiri. (1995) The surface properties of sputtered amorphous silicon thin films. Journal of Non-Crystalline Solids 189:1-2, pages 167-172.
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Qing Zhang, Minoru Kumeda & Tatsuo Shimizu. (1995) Influence of light soaking on surface- and bulk-spin densities in hydrogenated amorphous silicon. Journal of Applied Physics 78:2, pages 1230-1234.
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T. Bekkay, K. Piyakis, Y. Diawara, E. Sacher, A. Yelon & J.F. Currie. (1991) Band bending and Fermi level shifts in phosphorus-doped hydrogenated amorphous silicon studied by X-ray photoelectron spectroscopy. Surface Science 258:1-3, pages 190-196.
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L. Chahed, M. L. Thèye, D. Fournier, J. P. Roger, A. C. Boccara, Y. M. Li, W. A. Turner & W. Paul. (1991) Surface effects in hydrogenated amorphous silicon studied by photothermal-deflection experiments. Physical Review B 43:18, pages 14488-14497.
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Sin-Ichiro Ishihara. (1989) Evaporated metal films as substrates for hydrogenated amorphous silicon. Thin Solid Films 182:1-2, pages 229-236.
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M. Meunier, M. Bisson & M. Kemp. (1989) Amorphous silicon static induction transistor. Journal of Non-Crystalline Solids 115:1-3, pages 108-110.
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Shin-ichiro Ishihara & Masatoshi Kitagawa. (1989) a -Si:H solar cell with low-resistance series connection by metal diffusion . Journal of Applied Physics 65:10, pages 4045-4047.
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M. Bisson, M. Kemp & M. Meunier. (1989) Fabrication and characterization of the amorphous-silicon static induction transistor. IEEE Transactions on Electron Devices 36:12, pages 2844-2847.
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Tatsuo Shimizu, Xixiang Xu, Hideo Kidoh, Akiharu Morimoto & Minoru Kumeda. (1988) Surface and bulk defects in hydrogenated amorphous silicon and silicon‐based alloy films. Journal of Applied Physics 64:10, pages 5045-5049.
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V. Chacorn & D. Haneman. (1988) Thickness and doping dependence of the optical gap in amorphous hydrogenated silicon films. Solid State Communications 65:7, pages 609-611.
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Shin-Ichiro Ishihara & Takashi Hirao. (1987) Depth profile measurements of aluminium film on phosphorus-doped hydrogenated amorphous silicon layers by Auger electron spectroscopy. Thin Solid Films 155:2, pages 325-329.
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Shin-ichiro Ishihara, Masatoshi Kitagawa & Takashi Hirao. (1987) Low-temperature crystallization of hydrogenated amorphous silicon films in contact with evaporated aluminum electrodes. Journal of Applied Physics 62:3, pages 837-840.
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D. Haneman & D. H. Zhang. (1987) Persistent photoconductivity and field-enhanced conductivity in amorphous-silicon doping-modulated superlattices. Physical Review B 35:5, pages 2536-2539.
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Gy. Zentai & M. Füstöss-Wégner. (1985) Microinhomogeneities in glow discharge deposited aSi:H layers. Journal of Non-Crystalline Solids 77-78, pages 225-228.
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