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Philosophical Magazine B Volume 50, 1984 - Issue 3
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Letters section

Majority and minority carrier lifetimes in doped a-Si junctions and the energy of the dangling-bond state

W. E. Spear Carnegie Laboratory of Physics, The University, Dundee, Scotland
,
H. L. Steemers Carnegie Laboratory of Physics, The University, Dundee, Scotland
,
P. G. Le Comber Carnegie Laboratory of Physics, The University, Dundee, Scotland
&
R. A. Gibson Carnegie Laboratory of Physics, The University, Dundee, Scotland
Pages L33-L40 | Received 31 May 1984, Accepted 02 Jul 1984, Published online: 27 Sep 2006

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J. Hubin & A.V. Shah. (1995) Effect of the recombination function on the collection in a p—i—n solar cell. Philosophical Magazine B 72:6, pages 589-599.
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T. Smaïl & T. Mohammed-Brahim. (1991) Temperature dependence of steady-state photoconductivity in hydrogenated amorphous silicon. Philosophical Magazine B 64:6, pages 675-688.
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A.C. Hourd, D.L. Melville & W.E. Spear. (1991) Electronic properties of amorphous and microcrystalline silicon prepared in a microwave plasma from SiF4 . Philosophical Magazine B 64:5, pages 533-550.
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E. Morgado. (1991) Recombination at correlated dangling bonds and the effects of Fermi level position on steady-state photoconductwiry in amorphous silicon. Philosophical Magazine B 63:2, pages 529-542.
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D.M. Goldie, W.E. Spear & E.Z. Liu. (1990) Electron and hole transport in compensated amorphous silicon. Philosophical Magazine B 62:5, pages 509-525.
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W. Grevendonk, M. Verluyten, J. Dauwen, G.J. Adriaenssens & J. Bezemer. (1990) Optical modulation spectroscopy of dangling bonds in a-Si: H. Philosophical Magazine B 61:3, pages 393-402.
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W.E. Spear, P.G. Lecomber & D.M. Goldie. (1990) The investigation of charge transport in compensated amorphous silicon. Critical Reviews in Solid State and Materials Sciences 16:6, pages 389-402.
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K. Abe, H. Okamoto, Y. Nitta, Y. Tsutsumi, K. Hattori & Y. Hamakawa. (1988) Gap states in undoped amorphous silicon studied by below-gap modulated photocurrent spectroscopy. Philosophical Magazine B 58:2, pages 171-184.
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F. Vaillant, D. Jousse & J.-C. Bruyere. (1988) Recombination at dangling bonds and band tails: Temperature dependence of photoconductivity in hydrogenated amorphous silicon. Philosophical Magazine B 57:5, pages 649-661.
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F. Djamdji & P.G. Le Comber. (1987) An investigation of the conductivity prefactor in a-Si as a function of Fermi level position using the field-effect experiment. Philosophical Magazine B 56:1, pages 31-50.
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W.E. Spear & CarolynS. Cloude. (1987) Interpretation of the low-temperature photoconductivity in a-Si. Philosophical Magazine Letters 55:6, pages 271-276.
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Hideyo Okushi & Kazunobu Tanaka. (1987) Energy levels of dangling-bond centres in a-Si:H studied by photocapadtance transient spectroscopy. Philosophical Magazine Letters 55:3, pages 135-141.
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Gautam Ganguly, Swati Ray & A.K. Barua. (1986) Photo-induced changes in the properties of undoped and boron-doped a-Si:H films. Philosophical Magazine B 54:4, pages 301-309.
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K. Shimakawa, Y. Yano & Y. Katsuma. (1986) Origin of the non-exponential photocurrent decay in amorphous semiconductors. Philosophical Magazine B 54:4, pages 285-299.
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G.B. Smith & D.R. McKenzie. (1986) Steady-state photoconductivity in a-Si:H prepared by d.c. magnetron methods. Philosophical Magazine B 54:4, pages 255-272.
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J.M. Siefert & G. de Rosny. (1986) In-situ determination of potential profiles in a-Si: H. Philosophical Magazine B 54:2, pages L57-L62.
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A. Doghmane & W.E. Spear. (1986) Determination of the recombination rate constants in amorphous silicon from double-injection experiments. Philosophical Magazine B 53:6, pages 463-475.
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G. Müller, H. Mannsperger & S. Kalbitzer. (1986) Substitutional doping of amorphous silicon a comparison of different doping mechanisms. Philosophical Magazine B 53:4, pages 257-268.
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P.G. Le Comber & W.E. Spear. (1986) The energy of the dangling-bond states in a-Si. Philosophical Magazine B 53:1, pages L1-L7.
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W.E. Spear & P.G. Le Comber. (1985) Transient mobility and lifetime studies in amorphous silicon and their interpretation. Philosophical Magazine B 52:3, pages 247-260.
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R.A. Street, D.K. Biegelsen, W.B. Jackson, N.M. Johnson & M. Stutzmann. (1985) Dopant and defect states in a-Si:H. Philosophical Magazine B 52:3, pages 235-245.
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Hideyo Okushi. (1985) Gap states in phosphorus-doped amorphous silicon studied by isothermal capacitance transient spectroscopy. Philosophical Magazine B 52:1, pages 33-57.
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F. Schauer & J. Koĉar;ka. (1985) Study of light-induced metastable defects by means of temperature-modulated space-charge-limited currents. Philosophical Magazine B 52:1, pages L25-L30.
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Martin S. Brandt & Martin Stutzmann. (1994) An alternative degradation method for amorphous hydrogenated silicon: The constant degradation method. Journal of Applied Physics 75:5, pages 2507-2515.
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