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Philosophical Magazine B Volume 49, 1984 - Issue 1
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Letters section

On the transport mechanism in chalcogenide glasses

H. Overhof Fachbereich Physik, Universität Paderborn, D-4790, Paderborn, F.R. Germany
&
W. Beyer Institut für Grenzflächenforschung und Vakuumphysik, Kernforschungsanlage Jülich, D-5170, Jülich, F.R. Germany
Pages L9-L14 | Received 14 Oct 1983, Accepted 17 Nov 1983, Published online: 01 Dec 2006

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Ch. Bapanayya, Rajeev Gupta & S.C. Agarwal. (2011) Potential fluctuations in phase change memory materials. Philosophical Magazine Letters 91:2, pages 134-139.
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R. Neffati, K. Aly & A. Dahshan. (2021) Electric and thermoelectric properties of (SbSn)xSe100−x chalcogenide glasses. Applied Physics A 127:8.
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M. Dongol, A. El-Denglawey, A. F. Elhady & A. A. Abuelwafa. (2014) Polaron activation energy of nano porphyrin nickel(II) thin films. Applied Physics A 118:1, pages 345-351.
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N PARVATHALA REDDY, Ch BAPANAYYA, RAJEEV GUPTA & S C AGARWAL. (2013) Durability of rewritable phase-change Ge X Sb Y Te1 − X − Y memory devices. Pramana 80:6, pages 1065-1081.
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Satish C. Agarwal. (2012) Role of potential fluctuations in phase-change GST memory devices. physica status solidi (b) 249:10, pages 1956-1961.
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A F El-Deeb, H S Metwally & H A Shehata. (2008) Structural and electrical properties of In 6 Se 7 thin films . Journal of Physics D: Applied Physics 41:12, pages 125305.
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M. Dongol, M. M. El-Nahass, M. Abou-zied & A. El-Denglawey. (2007) Thermoelectric properties and mobility activation energy of amorphous As 20 Se 80− x Tl x films . The European Physical Journal Applied Physics 37:3, pages 257-260.
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H. Fritzsche. 2003. digital Encyclopedia of Applied Physics. digital Encyclopedia of Applied Physics.
Z H Khan, M Zulfeqaur, A Kumar & M Husain. (2002) Electrical conductivity and thermo-electric power of a-Se 80 x In x and Se 80 x Ge 20 In x thin films . Canadian Journal of Physics 80:1, pages 19-27.
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K L Bhatia, M Singh, T Katagawa, N Kishore & M Suzuki. (1995) Optical and electronic properties of Bi-modified amorphous thin films of Ge 20 Te 80-x Bi x . Semiconductor Science and Technology 10:1, pages 65-70.
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M. Haro, C. Corrales, P. Villares, E. M?rquez & R. Jim?nez-Garay. (1993) Thermoelectric and Hall effect in amorphous alloy As0.20Se0.40Te0.40. Materials Letters 17:5, pages 263-267.
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L Tichy, P Viscor & H Ticha. (1992) On the DC electrical transport in As 2 SeTe glass . Journal of Physics: Condensed Matter 4:45, pages 8755-8764.
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Harald Overhof. (2011) The Impact of a Long-Ranged Random Potential on the Transport Properties of Amorphous Semiconductors. MRS Proceedings 258.
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S.R. Jagtap & J.K. Zope. (1991) Transport properties of amorphous semiconducting AsSeSn system. Journal of Non-Crystalline Solids 127:1, pages 19-24.
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Harald Overhof & Peter ThomasHarald Overhof & Peter Thomas. 1989. Electronic Transport in Hydrogenated Amorphous Semiconductors. Electronic Transport in Hydrogenated Amorphous Semiconductors 39 61 .
A.B. Gadkari & J.K. Zope. (1988) Electrical properties of the amorphous semiconducting Se-Te-In system. Journal of Non-Crystalline Solids 103:2-3, pages 295-299.
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Harald Overhof. (1987) The prefactor of the dc conductivity in amorphous semiconductors. Journal of Non-Crystalline Solids 97-98, pages 539-542.
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N Mott. (1987) The mobility edge since 1967. Journal of Physics C: Solid State Physics 20:21, pages 3075-3102.
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S.A. Dembovsky. (1987) Quasimolecular defects as a unified microscopic basis of the glassy state. Journal of Non-Crystalline Solids 90:1-3, pages 355-362.
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S.A. Dembovsky & E.A. Chechetkina. (1986) Glassy state clarified through chemical bonds and their defects. Journal of Non-Crystalline Solids 85:3, pages 346-357.
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M. Kitao, K. Yoshii & S. Yamada. (1985) Thermoelectric Power of Glassy As40Se60−xTex. physica status solidi (a) 91:1, pages 271-277.
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Madhavi J Zope & J.K Zope. (1985) Effect of γ-irradiation on non-linear I-V behaviour and thermoelectric measurements in amorphous semiconducting AsSeTe system. Journal of Non-Crystalline Solids 74:1, pages 47-55.
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P Fenz, H Muller, H Overhof & P Thomas. (1985) Activated transport in amorphous semiconductors. II. Interpretation of experimental data. Journal of Physics C: Solid State Physics 18:16, pages 3191-3199.
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W. Beyer & H. Overhof. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 257 307 .

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