Advanced search
Publication Cover
Philosophical Magazine B Volume 49, 1984 - Issue 1
Journal homepage
115
Views
134
CrossRef citations to date
0
Altmetric
Letters section

Disorder effects on deep trapping in amorphous semiconductors

R. A. Street Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California, 94304, U.S.A.
Pages L15-L20 | Received 19 Oct 1983, Accepted 31 Oct 1983, Published online: 01 Dec 2006

Citations (134)

Keep up to date with the latest research on this topic with citation updates for this article.

Subscribe to citation updates

Read on this site (21)

A.K. Browne, J.M. Marshall, D.M. Goldie & A.R. Hepburn. (1994) Transport properties of glow-discharge amorphous silicon grown under different deposition conditions. Philosophical Magazine B 69:2, pages 349-358.
Read now
C.E. Nebel & R.A. Street. (1993) Transient hole currents in hydrogenated amorphous silicon at low temperatures and high fields. Philosophical Magazine B 67:3, pages 407-415.
Read now
R.A. Street. (1991) Long-time transient conduction in a-Si:H p─i─n devices. Philosophical Magazine B 63:6, pages 1343-1363.
Read now
M. Abraham & V. Halpern. (1990) The effect on recombination in amorphous semiconductors of transitions between localized states. Philosophical Magazine B 62:5, pages 537-552.
Read now
S.O. Kasap, Viswanath Aiyah, B. Polischuk & M.A. Abkowitz. (1990) Determination of the deep-hole capture cross-section in a-Se via xerographic and interrupted-field time-of-flight techniques. Philosophical Magazine Letters 62:5, pages 377-382.
Read now
N.F. Mott. (1990) The Hall effect above T c in the superconductor YBa2Cu3O7-δ (YBCO). Philosophical Magazine Letters 62:4, pages 273-275.
Read now
W.B. Jackson. (1989) Role of bimolecular recombination in picosecond photoinduced absorption of hydrogenated amorphous silicon. Philosophical Magazine Letters 60:6, pages 277-282.
Read now
G. Schumm, K. Nitsch & G.H. Bauer. (1988) Gap-state distribution in a-Si:H by modulated photocurrent: Shallow-state-deep-state conversion and temperature shift of the electron-transport path. Philosophical Magazine B 58:4, pages 411-420.
Read now
K. Abe, H. Okamoto, Y. Nitta, Y. Tsutsumi, K. Hattori & Y. Hamakawa. (1988) Gap states in undoped amorphous silicon studied by below-gap modulated photocurrent spectroscopy. Philosophical Magazine B 58:2, pages 171-184.
Read now
Kiminori Hattori, Hiroaki Okamoto & Yoshihiro Hamakawa. (1988) Transient photocurrent study of the dangling bond centre in undoped amorphous silicon. Philosophical Magazine B 57:1, pages 13-29.
Read now
David Adler & Marvin Silver. (1987) Microscopic mobility in hydrogenated amorphous silicon. Philosophical Magazine Letters 56:3, pages 113-119.
Read now
E.A. Schiff. (1987) Mobility–lifetime estimates in amorphous hydrogenated silicon (a-Si:H). Philosophical Magazine Letters 55:2, pages 87-92.
Read now
D. Mencaraglia & J.P. Kleider. (1987) Transition from diffusive to ballistic capture related to hydrogen incorporation in amorphous silicon. Philosophical Magazine Letters 55:2, pages 63-68.
Read now
V. Halpern. (1986) The statistics of recombination via dangling bonds in amorphous silicon. Philosophical Magazine B 54:6, pages 473-482.
Read now
A. Doghmane & W.E. Spear. (1986) Determination of the recombination rate constants in amorphous silicon from double-injection experiments. Philosophical Magazine B 53:6, pages 463-475.
Read now
P.G. Le Comber & W.E. Spear. (1986) The energy of the dangling-bond states in a-Si. Philosophical Magazine B 53:1, pages L1-L7.
Read now
Hiroaki Okamoto, Hirotsugu Kida, Takeshi Kamada & Yoshihiro Hamakawa. (1985) Below-gap primary photocurrent associated with correlated defects in hydrogenated amorphous silicon. Philosophical Magazine B 52:6, pages 1115-1133.
Read now
R. Pandya & E.A. Schiff. (1985) A multiple-trapping model with optical bias. Philosophical Magazine B 52:6, pages 1075-1095.
Read now
W.E. Spear & P.G. Le Comber. (1985) Transient mobility and lifetime studies in amorphous silicon and their interpretation. Philosophical Magazine B 52:3, pages 247-260.
Read now
Hideyo Okushi. (1985) Gap states in phosphorus-doped amorphous silicon studied by isothermal capacitance transient spectroscopy. Philosophical Magazine B 52:1, pages 33-57.
Read now
W.E. Spear, H.L. Steemers, P.G. Le Comber & R.A. Gibson. (1984) Majority and minority carrier lifetimes in doped a-Si junctions and the energy of the dangling-bond state. Philosophical Magazine B 50:3, pages L33-L40.
Read now

Articles from other publishers (113)

Bo Che, Zhiyuan Cai, Peng Xiao, Gang Li, Yuqian Huang, Rongfeng Tang, Changfei Zhu, Shangfeng Yang & Tao Chen. (2022) Thermally Driven Point Defect Transformation in Antimony Selenosulfide Photovoltaic Materials. Advanced Materials 35:6.
Crossref
Jui-Sheng Wu, Chih-Chieh Lee, Chia-Hsun Wu, Cheng-Jun Huang, Yan-Kui Liang, You-Chen Weng & Edward Yi Chang. (2022) Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack. IEEE Journal of the Electron Devices Society 10, pages 525-531.
Crossref
Seung Jae Baik & Hyunjung Shin. (2021) Charge Trapping in Amorphous Dielectrics for Secure Charge Storage. ACS Applied Materials & Interfaces 13:9, pages 11507-11514.
Crossref
Nicolas Fourches, Magdalena Zielińska & Gabriel Charles. 2019. Use of Gamma Radiation Techniques in Peaceful Applications. Use of Gamma Radiation Techniques in Peaceful Applications.
Leonardo Kopprio, Christophe Longeaud & Javier Schmidt. (2019) Hydrogenated amorphous silicon characterization from steady state photoconductive measurements. Semiconductor Science and Technology 34:4, pages 045010.
Crossref
Robert A. Street, Yang Yang, Barry C. Thompson & Iain McCulloch. (2016) Capacitance Spectroscopy of Light Induced Trap States in Organic Solar Cells. The Journal of Physical Chemistry C 120:39, pages 22169-22178.
Crossref
Robert A. Street. (2015) Electronic Structure and Properties of Organic Bulk‐Heterojunction Interfaces. Advanced Materials 28:20, pages 3814-3830.
Crossref
Anagh Bhaumik, Austin M. Shearin, Rishi Patel & Kartik Ghosh. (2014) Significant enhancement of optical absorption through nano-structuring of copper based oxide semiconductors: possible future materials for solar energy applications. Phys. Chem. Chem. Phys. 16:22, pages 11054-11066.
Crossref
Victor I. Mikla & Victor V. Mikla. 2014. Medical Imaging Technology. Medical Imaging Technology 89 112 .
Robert A. Street & K. Winer. 2006. Materials Science and Technology. Materials Science and Technology.
Robert A. Street, Alexa Krakaris & Sarah R. Cowan. (2012) Recombination Through Different Types of Localized States in Organic Solar Cells. Advanced Functional Materials 22:21, pages 4608-4619.
Crossref
R. A. Street, J. E. Northrup & B. S. Krusor. (2012) Radiation induced recombination centers in organic solar cells. Physical Review B 85:20.
Crossref
S. Steingrube, R. Brendel & P. P. Altermatt. (2012) Limits to model amphoteric defect recombination via SRH statistics. physica status solidi (a) 209:2, pages 390-400.
Crossref
V.I. Mikla & V.V. Mikla. (2011) Xerographic spectroscopy of gap states in Se-rich amorphous semiconductors review. Journal of Non-Crystalline Solids 357:22-23, pages 3675-3688.
Crossref
R. A. Street, M. Schoendorf, A. Roy & J. H. Lee. (2010) Interface state recombination in organic solar cells. Physical Review B 81:20.
Crossref
Sara Olibet, Evelyne Vallat‐Sauvain, Luc Fesquet, Christian Monachon, Aïcha Hessler‐Wyser, Jérôme Damon‐Lacoste, Stefaan De Wolf & Christophe Ballif. (2010) Properties of interfaces in amorphous/crystalline silicon heterojunctions. physica status solidi (a) 207:3, pages 651-656.
Crossref
E.S. Machlin. 2006. Materials Science in Microelectronics II. Materials Science in Microelectronics II 1 56 .
M. Meaudre, M. E. Gueunier-Farret, R. Meaudre, J. P. Kleider, S. Vignoli & B. Canut. (2005) Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films. Journal of Applied Physics 98:3.
Crossref
C E Nebel. (2003) Electronic properties of CVD diamond. Semiconductor Science and Technology 18:3, pages S1-S11.
Crossref
P. Kounavis. (2002) Various defect states in a -Si:H studied by modulated photoconductivity spectroscopy . Physical Review B 65:15.
Crossref
Satoshi Shimizu, Paul Stradins, Michio Kondo & Akihisa Matsuda. (2002) Photocarrier capture properties in a-Si:H. Journal of Non-Crystalline Solids 299-302, pages 466-470.
Crossref
K. Hattori, T. Hirao, Y. Musa & H. Okamoto. (2001) Tunneling-assisted thermalization and recombination of nonequilibrium carriers in localized states: Application to the frequency-resolved drift mobility in amorphous silicon. Physical Review B 64:12.
Crossref
E. Mytilineou. 2001. Properties and Applications of Amorphous Materials. Properties and Applications of Amorphous Materials 301 310 .
R. A. Street & K. Winer. 2000. Handbook of Semiconductor Technology Set. Handbook of Semiconductor Technology Set 541 595 .
R. A. Street & K. Winer. 2000. Handbook of Semiconductor Technology. Handbook of Semiconductor Technology 541 595 .
P Kounavis & E Mytilineou. (1999) Photostructural changes in amorphous semiconductors studied by the modulated photocurrent method. Journal of Physics: Condensed Matter 11:46, pages 9105-9114.
Crossref
P. Pipoz, H. Beck & A. V. Shah. (1997) Transient photoconductivity with optical bias in undoped and slightly n-doped hydrogenated amorphous silicon. Physical Review B 55:16, pages 10528-10540.
Crossref
Nobuhiro Hata, Ian S. Osborne, Toru Ikeda, Rudolf Durny & Akihisa Matsuda. (1996) Light-induced metastability of ‘stable’ a-Si:H deposited from silane-dichlorosilane mixtures — comprehensive characterization. Journal of Non-Crystalline Solids 198-200, pages 415-418.
Crossref
L. Calcagnile & P. A. Stolk. (1996) Defects in ion-implanted crystalline silicon probed by femtosecond laser spectroscopy. Il Nuovo Cimento D 18:5, pages 595-603.
Crossref
W. Graf, K. Leihkamm, M. Wolf, J. Ristein & L. Ley. (1996) Changes of the occupied density of defect states of a -Si:H upon illumination . Physical Review B 53:8, pages 4522-4533.
Crossref
J. Hubin, A. V. Shah, E. Sauvain & P. Pipoz. (1995) Consistency between experimental data for ambipolar diffusion length and for photoconductivity when incorporated into the ‘‘standard’’ defect model for a -Si:H . Journal of Applied Physics 78:10, pages 6050-6059.
Crossref
D. Caputo, G. de Cesare, F. Irrera, F. Palma, M.C. Rossi, G. Conte, G. Nobile & G. Fameli. (1994) A systematic investigation of the role of material parameters in metastability of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids 170:3, pages 278-286.
Crossref
P. A. Stolk, F. W. Saris, A. J. M. Berntsen, W. F. van der Weg, L. T. Sealy, R. C. Barklie, G. Krötz & G. Müller. (1994) Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon. Journal of Applied Physics 75:11, pages 7266-7286.
Crossref
J. Veres & C. Juhasz. (1993) Cycled xerographic and time-of-flight measurements: theory and experiment. Journal of Non-Crystalline Solids 164-166, pages 407-410.
Crossref
Gerhard Schumm. (1993) The defect-pool model and charged defects in amorphous silicon. Journal of Non-Crystalline Solids 164-166, pages 317-322.
Crossref
G. Schumm, W. B. Jackson & R. A. Street. (1993) Nonequilibrium occupancy of tail states and defects in a -Si:H: Implications for defect structure . Physical Review B 48:19, pages 14198-14207.
Crossref
Daxing Han, Douglas C. Melcher, E. A. Schiff & M. Silver. (1993) Optical-bias effects in electron-drift measurements and defect relaxation in a -Si:H . Physical Review B 48:12, pages 8658-8666.
Crossref
G. Amato, F. Giorgis, F. Fizzotti & C. Manfredotti. (1993) Depth profiling of defects in a-Si:H films by means of modulated photocurrent. Solid State Communications 86:5, pages 277-280.
Crossref
R P Barclay. (1993) Enhancement of mobility at low temperatures in amorphous silicon hydride. Journal of Physics: Condensed Matter 5:16, pages L235-L238.
Crossref
D. Caputo, G. De Cesare, G. Irrera, G. Masini, F. Palma, M. C. Rossi, G. Conte, G. Nobile & E. Terzini. (1993) On the Role of the Staebler-WronSki Susceptibility in Hydrogenated Amorphous Silicon. MRS Proceedings 297.
Crossref
N.F. Mott. (1993) Polaron models of high-temperature superconductivity. Physica C: Superconductivity 205:1-2, pages 191-205.
Crossref
Homer Antoniadis & E. A. Schiff. (1992) Transient photocharge measurements and electron emission from deep levels in undoped a -Si:H . Physical Review B 46:15, pages 9482-9492.
Crossref
P. A. Stolk, L. Calcagnile, S. Roorda, W. C. Sinke, A. J. M. Berntsen & W. F. van der Weg. (1992) Defects in amorphous silicon probed by subpicosecond photocarrier dynamics. Applied Physics Letters 60:14, pages 1688-1690.
Crossref
S O Kasap. (1992) Charge-carrier deep-trapping kinetics in high-resistivity semiconductors. Journal of Physics D: Applied Physics 25:1, pages 83-93.
Crossref
R.A. Street & C.C. Tsai. (1992) Time-of-flight measurements of thermally induced defects in a-Si:H. Journal of Non-Crystalline Solids 141, pages 162-165.
Crossref
Z.V. Vardeny, X. Wei, B.C. Hess, S.G. Han & S. Nitta. (1992) Studies of photocarrier relaxation processes in polysilane alloys from subpicosecond to metastability. Journal of Non-Crystalline Solids 141, pages 66-75.
Crossref
M. Kunst, H. C. Neitzert & H. Ruebel. (1991) Transient photoconductivity of a - :H alloys . Physical Review B 44:3, pages 1081-1086.
Crossref
Homer Antoniadis & E. A. Schiff. (1991) Nonlinear photocarrier drift in hydrogenated amorphous silicon-germanium alloys. Physical Review B 43:17, pages 13957-13966.
Crossref
S. O. Kasap, Viswanath Aiyah, B. Polischuk, A. Bhattacharyya & Z. Liang. (1991) Deep-trapping kinematics of charge carriers in amorphous semiconductors: A theoretical and experimental study. Physical Review B 43:8, pages 6691-6705.
Crossref
P. A. Stolk, L. Calcagnile, S. Roorda, H. B. van Linden, Van den Heuvell & F. W. Saris. (2011) Picosecond Photocarrier Lifetimes in Ion-Irradiated Amorphous and Crystalline Silicon. MRS Proceedings 235.
Crossref
M. Block, D. Bonnet & F. Zetzsche. (1991) Modeling of multilayer amorphous thin film silicon-germanium single and tandem solar cells. Modeling of multilayer amorphous thin film silicon-germanium single and tandem solar cells.
S.O. Kasap, V. Aiyah, B. Polischuk, Z. Liang & A. Bekirov. (1991) Photoinduced discharge characteristics of xerographic photoreceptors: Theory and experiment. Journal of Non-Crystalline Solids 137-138, pages 1329-1332.
Crossref
Meinolf Block, Dieter Bonnet & Frank Zetzsche. (1991) Modeling of multilayer amorphous thin film SixGe1−x single and tandem solar cells. Journal of Non-Crystalline Solids 137-138, pages 1197-1200.
Crossref
B. Polischuk, S.O. Kasap, V. Aiyah, D. Scansen & A. Bekirov. (1991) Charge carrier trapping in chalcogenide semiconductors. Journal of Non-Crystalline Solids 137-138, pages 943-946.
Crossref
R.P. Barclay & J.M. Boud. (1991) Noise characterisation studies of amorphous semiconductors. Journal of Non-Crystalline Solids 137-138, pages 495-498.
Crossref
N. Wyrsch & A. Shah. (1991) Depth profiles of mobility lifetime products and capture cross-sections in a-Si:H. Journal of Non-Crystalline Solids 137-138, pages 431-434.
Crossref
R. A. Street. (1990) Thermal generation currents in hydrogenated amorphous silicon p - i - n structures . Applied Physics Letters 57:13, pages 1334-1336.
Crossref
S. G. Han, B. C. Hess, G. S. Kanner, Z. V. Vardeny & S. Nitta. (1990) Studies of picosecond carrier dynamics in polysilane alloys: Evidence for geminate recombination in small hydrogenated amorphous silicon clusters. Applied Physics Letters 57:12, pages 1215-1217.
Crossref
Changhua Qiu & Jacques I. Pankove. (1990) Light-induced change in defect-band photoluminescence of doped hydrogenated amorphous silicon. Physical Review B 41:18, pages 12744-12749.
Crossref
N. Wyrsch, P. Roca i Cabarrocas, S. Wagner & V. Viret. (2011) Effect of the Depletion Region of a-Si:H Schottky Diodes on the Time-of-Flight Mobility-Lifetime Product. MRS Proceedings 192.
Crossref
Homer Antoniadis & E.A. Schiff. (2011) The First Fifty Billion Nanoseconds of Electron Photocarrier Evolution in Undoped a-Si:H. MRS Proceedings 192.
Crossref
V. Halpern. (1989) Non-radiative recombination at dangling bonds in a-Si:H. Journal of Non-Crystalline Solids 114, pages 441-443.
Crossref
S.P Hotaling, Homer Antoniadis & E.A Schiff. (1989) Electron mobility-lifetime product and D° defect density in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids 114, pages 420-422.
Crossref
S. Quereshi, V. Perez-Mendez, S.N. Kaplan, I. Fujieda, G. Cho & R.A. Street. (1989) Material parameters in thick hydrogenated amorphous silicon radiation detectors. Journal of Non-Crystalline Solids 114, pages 417-419.
Crossref
R.P. Barclay, M. Nesladek, T. Dyer & D. Kurnia. (1989) Investigation of the gap state distribution in a-Si:H using post-transit pulse analysis. Journal of Non-Crystalline Solids 114, pages 259-261.
Crossref
S.P. Hotaling, Homer Antoniadis & E.A. Schiff. (1989) Electron trapping and paramagnetic defect density measurements in hydrogenated amorphous silicon. Solar Cells 27:1-4, pages 357-362.
Crossref
I. Balberg & S. Z. Weisz. (1989) State distribution and ambipolar diffusion length in n -type hydrogenated amorphous silicon . Journal of Applied Physics 66:1, pages 215-218.
Crossref
Hiroaki Kakinuma. (1989) Fermi-level-dependent mobility-lifetime product in -Si: H . Physical Review B 39:14, pages 10473-10476.
Crossref
G. F. Seynhaeve, R. P. Barclay, G. J. Adriaenssens & J. M. Marshall. (1989) Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous silicon. Physical Review B 39:14, pages 10196-10205.
Crossref
H. Oheda. (1989) Instability of the free surface of undoped a -Si:H studied by photoluminescence and electron-spin-resonance measurements . Physical Review B 39:14, pages 10179-10184.
Crossref
S. Qureshi, V. Perez-Mendez, S. N. Kaplan, I. Fujieda & G. Cho. (2011) Material Parameters in a Thick Hydrogenated Amorphous Silicon Detector and their Effect on Signal Collection. MRS Proceedings 149.
Crossref
Sufi Zafar & E. A. Schiff. (2011) Spin Relaxation Spectroscopy of the D-Center in Hydrogenated Amorphous Silicon. MRS Proceedings 149.
Crossref
H.M. Wentinck & W. Crans. (1989) Determination of the electric field at interfaces in amorphous-silicon devices using time-of-flight measurements. IEEE Transactions on Electron Devices 36:12, pages 2803-2809.
Crossref
C.I. Ukah, J.M. Perz, R.V. Kruzelecky & S. Zukotynski. (1989) Oxygen traps in evaporated hydrogenated amorphous silicon. Journal of Non-Crystalline Solids 107:2-3, pages 301-308.
Crossref
Yoshihiro Hamakawa & Hiroaki Okamoto. 1989. Advances in Solar Energy. Advances in Solar Energy 1 98 .
Wen-Jer Tzeng & Si-Chen Lee. (1988) New model for the Staebler–Wronski effect in an amorphous silicon hydrogen alloy. Applied Physics Letters 53:21, pages 2044-2046.
Crossref
A. V. Gelatos, K. K. Mahavadi, J. D. Cohen & J. P. Harbison. (1988) Transient photocapacitance and photocurrent studies of undoped hydrogenated amorphous silicon. Applied Physics Letters 53:5, pages 403-405.
Crossref
Changhua Qiu, Wei Li, Daxing Han & Jacques Pankove. (1988) The annealing behavior of light-induced defects in a -Si:H . Journal of Applied Physics 64:2, pages 713-717.
Crossref
V Halpern. (1988) The intensity dependence of the steady-state photoconductivity in amorphous semiconductors. Journal of Physics C: Solid State Physics 21:13, pages 2555-2563.
Crossref
H. Tasaki, W. Y. Kim, M. Hallerdt, M. Konagai & K. Takahashi. (1988) Computer simulation model of the effects of interface states on high‐performance amorphous silicon solar cells. Journal of Applied Physics 63:2, pages 550-560.
Crossref
Avgerinos V. Gelatos & J. David Cohen. (2011) Photocapacitance Studies Of Light Induced Changes in the Density of Gap States of N-Type Doped and Undoped Hydrogenated Amorphous Silicon Films. MRS Proceedings 118.
Crossref
S M Vaezi-Nejad & C Juhasz. (1987) Electrical properties of amorphous semiconductor selenium and its alloys: I. Monolayers. Semiconductor Science and Technology 2:12, pages 809-821.
Crossref
G.B. Turner, R.J. Schwartz, J.W. Park & J.L. Gray. (1987) Recombination in thin film Si:H p-i-n solar cells. Journal of Non-Crystalline Solids 97-98, pages 1307-1310.
Crossref
M.A. Parker & E.A. Schiff. (1987) The geometry problem for photocarrier drift mobilities in a-Si:H. Journal of Non-Crystalline Solids 97-98, pages 627-630.
Crossref
J. Bullot & M. P. Schmidt. (1987) Physics of Amorphous Silicon–Carbon Alloys. physica status solidi (b) 143:2, pages 345-418.
Crossref
A. Guilarducci de Salva, J.P. Simon, F. Livet & P. Guyot. (1987) Anisotropy of clustering during decomposition of AlZn single crystals. Scripta Metallurgica 21:8, pages 1061-1066.
Crossref
C. Juhasz, M. Vaezi-Nejad & S. O. Kasap. (1987) Xerographic properties of single- and double-layer photoreceptors based on amorphous selenium-tellurium alloys. Journal of Materials Science 22:7, pages 2569-2582.
Crossref
I. P. Zvyagin, I. A. Kurova, N. N. Ormont & K. B. Chitaya. (1987) Characteristics of recombination processes in doped hydrated amorphous silicon films. Soviet Physics Journal 30:6, pages 451-460.
Crossref
W.E. Spear. (1987) The investigation of transport properties in a-si by fast transient techniques. Journal of Non-Crystalline Solids 90:1-3, pages 171-178.
Crossref
Changhua Qiu & Daxing Han. (1987) Study of gap states distribution on a-Si:H by means of steady state photoconductivity and photoconductivity response time. Journal of Non-Crystalline Solids 90:1-3, pages 115-118.
Crossref
E. A. Schiff. 1987. Disordered Semiconductors. Disordered Semiconductors 379 388 .
Hidetoshi Oheda. (1986) Excitation-energy dependence of electron lifetime in phosphorus-doped hydrogenated amorphous silicon. Journal of Applied Physics 60:12, pages 4197-4203.
Crossref
F. Karg, W. Krühler, M. Möller & K. v. Klitzing. (1986) Electron and hole transport in a -Si1− x Ge x :H alloys . Journal of Applied Physics 60:6, pages 2016-2023.
Crossref
U. Vahalia, J. Ferrario & E. A. Schiff. (1986) Dangling bond in amorphous hydrogenated silicon: Anomalous spin relaxation. Physical Review B 34:3, pages 1415-1421.
Crossref
Ruud E. I. Schropp, Jan Snijder & Jan F. Verwey. (2011) Capacitance-Voltage Characteristics of Metallic Gate/Oxide/a-Si:H Mos Structures. MRS Proceedings 70.
Crossref
M. A. Parker, K. A. Conrad & E. A. Schiff. (2011) The Dangling Bond in Undoped Amorphous Hydrogenated Silicon: Trap or Recombination Center?. MRS Proceedings 70.
Crossref
R.A. Street. 1986. Amorphous Metals and Semiconductors. Amorphous Metals and Semiconductors 278 288 .
Juh Tzeng Lue. (1985) Temperature and field dependence on the photoconductive decay measurements of RF sputtered and CVD grown a-Si. physica status solidi (a) 92:2, pages K161-K165.
Crossref
Rolf K?nenkamp. (1985) Trapping and recombination kinetics in a-Si:H thin films. Journal of Non-Crystalline Solids 77-78, pages 643-646.
Crossref
R Pandya & E.A Schiff. (1985) Recombination processes and optical bias in undoped a-Si:H. Journal of Non-Crystalline Solids 77-78, pages 623-626.
Crossref
W.E Spear, A.C Hourd & S Kinmond. (1985) The temperature dependence of the D° and D+ capture cross-section in a-Si. Journal of Non-Crystalline Solids 77-78, pages 607-610.
Crossref
D. Mencaraglia, J.P. Kleider & J. Baixeras. (1985) Hydrogen influence on the optoelectronic properties of triode dc sputtered amorphous silicon: Disorder effects on deep gap states characteristics. Journal of Non-Crystalline Solids 77-78, pages 319-322.
Crossref
W.B Jackson, C.C Tsai & S.M Kelso. (1985) Implications of recent density-of-states measurements for optical and transport properties of a-Si:H. Journal of Non-Crystalline Solids 77-78, pages 281-290.
Crossref
R. A. Street. (1985) Transient conductivity and photoconductivity in a -Si:H . Physical Review B 32:6, pages 3910-3920.
Crossref
D. Mencaraglia, A. Amaral & J. P. Kleider. (1985) Admittance frequency dependence of Schottky barriers formed on dc triode sputtered amorphous silicon: Hydrogen influence on deep gap state characteristics. Journal of Applied Physics 58:3, pages 1292-1301.
Crossref
M. Stutzmann, W. B. Jackson & C. C. Tsai. (1985) Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. Physical Review B 32:1, pages 23-47.
Crossref
Jong-Hwan Yoon & Choochon Lee. (1985) Annealing effects on electron drift mobility in hydrogenated amorphous silicon. Journal of Applied Physics 57:10, pages 4808-4810.
Crossref
W. B. Jackson, S. M. Kelso, C. C. Tsai, J. W. Allen & S.-J. Oh. (1985) Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon. Physical Review B 31:8, pages 5187-5198.
Crossref
R. A. Street. 1985. Proceedings of the 17th International Conference on the Physics of Semiconductors. Proceedings of the 17th International Conference on the Physics of Semiconductors 845 850 .
R. A. Street, D. K. Biegelsen & R. L. Weisfield. (1984) Recombination in -Si: H: Transitions through defect states . Physical Review B 30:10, pages 5861-5870.
Crossref
K. Shimakawa & Y. Yano. (1984) Residual photocurrent decay in hydrogenated amorphous silicon. Applied Physics Letters 45:8, pages 862-864.
Crossref
B. A. Wilson, A. M. Sergent, K. W. Wecht, A. J. Williams, T. P. Kerwin, C. M. Taylor & J. P. Harbison. (1984) Effects of annealing on plasma-deposited -Si:H films grown under optimal conditions . Physical Review B 30:6, pages 3320-3332.
Crossref
W.E. Spear & H.L. Steemers. (1984) The investigation of excess carrier lifetimes in amorphous silicon by transient methods. Journal of Non-Crystalline Solids 66:1-2, pages 163-174.
Crossref

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.