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Philosophical Magazine B Volume 49, 1984 - Issue 1
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Original Articles

Core structure and electronic bands of the 90° partial dislocation in silicon

K. W. Lodge Department of Metallurgy and Science of Materials, University of Oxford Parks Road, Oxford, OX1 3PH, England
,
S. L. Altmann Department of Metallurgy and Science of Materials, University of Oxford Parks Road, Oxford, OX1 3PH, England
,
A. Lapiccirella C.N.R., Istituto Teoria Struttura Elettronica, Via Salaria 29,500, CP10, 00016, Monterotondo, Stazione, Italy
&
N. Tomassini C.N.R., Istituto di Metodologia Avanzata Via Salaria 29,500, CP10, 00016, Monterotondo Stazione, Italy
Pages 41-61 | Received 23 May 1983, Accepted 05 Aug 1983, Published online: 01 Dec 2006

Citations (30)

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Read on this site (3)

K.W. Lodge, A. Lapiccirella, C. Battistoni, N. Tomassini & S.L. Altmann. (1989) The 90° partial dislocation in silicon: Geometry and electronic structure. Philosophical Magazine A 60:5, pages 643-651.
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A.S. Nandedkar & J. Narayan. (1987) Atomic structure of dislocations and dipoles in silicon. Philosophical Magazine A 56:5, pages 625-639.
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P. B. Hirsch. (1985) Dislocations in semiconductors. Materials Science and Technology 1:9, pages 666-677.
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Articles from other publishers (27)

Maria Ganchenkova & Risto M. Nieminen. 2015. Handbook of Silicon Based MEMS Materials and Technologies. Handbook of Silicon Based MEMS Materials and Technologies 253 293 .
Maria Ganchenkova & Risto M. Nieminen. 2015. Handbook of Silicon Based MEMS Materials and Technologies. Handbook of Silicon Based MEMS Materials and Technologies 263 303 .
Helmut Alexander & Helmar Teichler. 2006. Materials Science and Technology. Materials Science and Technology.
Maria Ganchenkova & Risto M. Nieminen. 2010. Handbook of Silicon Based MEMS Materials and Technologies. Handbook of Silicon Based MEMS Materials and Technologies 179 219 .
Helmut Alexander & Helmar Teichler. 2000. Handbook of Semiconductor Technology Set. Handbook of Semiconductor Technology Set 291 376 .
Helmut Alexander & Helmar Teichler. 2000. Handbook of Semiconductor Technology. Handbook of Semiconductor Technology 291 376 .
R. Jones. (2000) Do we really understand dislocations in semiconductors?. Materials Science and Engineering: B 71:1-3, pages 24-29.
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Theodore Kaplan, Mark Mostoller & M. F. Chisholm. (1998) Structural transformation in the partial dislocation in Si due to Ga impurities . Physical Review B 58:19, pages 12865-12867.
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Niklas Lehto & Sven Öberg. (1998) Effects of Dislocation Interactions: Application to the Period-Doubled Core of the 90° Partial in Silicon. Physical Review Letters 80:25, pages 5568-5571.
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A. Palma, E. Semprini, A. Talamo & N. Tomassini. (1996) Diffusion constant of ga, in and as adatoms on gaas (001) surface: molecular dynamics calculations. Materials Science and Engineering: B 37:1-3, pages 135-138.
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A. Palma, E. Semprini, A. Talamo & N. Tomassini. 1996. C,H,N and O in Si and Characterization and Simulation of Materials and Processes. C,H,N and O in Si and Characterization and Simulation of Materials and Processes 135 138 .
S. Öberg, P. K. Sitch, R. Jones & M. I. Heggie. (1995) First-principles calculations of the energy barrier to dislocation motion in Si and GaAs. Physical Review B 51:19, pages 13138-13145.
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A. Palma, E. Semprini, A. Talamo & N. Tomassini. (1995) Diffusion constant of Ga adatom on GaAs (001) surface: molecular dynamics calculations. Journal of Crystal Growth 150, pages 180-184.
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S. Marklund & Wang Yong-Liang. (1994) Influence of the 90° partial dislocation core structure in silicon on energy levels. Solid State Communications 91:4, pages 301-305.
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R. Jones, A. Umerski, P. Sitch, M. I. Heggie & S. Öberg. (1993) Density functional calculations of the structure and properties of impurities and dislocations in semiconductors. Physica Status Solidi (a) 138:2, pages 369-381.
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R. Jones, A. Umerski, P. Sitch, M. I. Heggie & S. Öberg. (1993) First-Principles Calculations of Dislocations in Semiconductors. Physica Status Solidi (a) 137:2, pages 389-399.
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J. R. K. Bigger, D. A. McInnes, A. P. Sutton, M. C. Payne, I. Stich, R. D. King-Smith, D. M. Bird & L. J. Clarke. (1992) Atomic and electronic structures of the 90° partial dislocation in silicon. Physical Review Letters 69:15, pages 2224-2227.
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S. Marklund & Wang Yong-Liang. (1992) Energy level calculations of the reconstructed 90° partial dislocation in silicon. Solid State Communications 82:2, pages 137-140.
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Yong-Liang Wang & H. Teichler. (1989) LCAO Recursion Approach for the Bound Electron States at the 90°-Partial Dislocation in Silicon. physica status solidi (b) 154:2, pages 649-659.
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J. Thibault-Desseaux. 1989. Semiconductor Silicon. Semiconductor Silicon 160 173 .
Aldo Amore Bonapasta, Claudio Battistoni, Andrea Lapiccirella, Norberto Tomassini, Simon L. Altmann & Kenneth W. Lodge. (1988) Molecular-cluster studies of defects in silicon lattices. III. Dangling-bond reconstruction at the core of a 90 ? partial dislocation in silicon . Physical Review B 37:6, pages 3058-3067.
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Aldo Amore Bonapasta, Claudio Battistoni, Andrea Lapiccirella, Norberto Tomassini, Simon L. Altmann & Kenneth W. Lodge. (1988) Molecular cluster studies of defects in tetrahedral lattices: Dangling bonds reconstruction at the core of a 90° partial dislocation in diamond. Solid State Communications 65:4, pages 245-250.
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N. Tomassini, A. Amore Bonapasta, A. Lapiccirella, K.W. Lodge & S.L. Altmann. (1987) Force field treatment of an amorphous germanium model. Journal of Non-Crystalline Solids 93:2-3, pages 241-256.
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Aldo Amore Bonapasta, Andrea Lapiccirella, Norberto Tomassini, Simon L. Altmann & Kenneth W. Lodge. 1987. Physics and Chemistry of Small Clusters. Physics and Chemistry of Small Clusters 55 59 .
M. Kohyama, R. Yamamoto & M. Doyama. (1986) Reconstructed Structures of Symmetrical 〈011〉 Tilt Grain Boundaries in Silicon. physica status solidi (b) 138:2, pages 387-397.
Crossref
M. Kohyama, R. Yamamoto & M. Doyama. (1986) Structures and Energies of Symmetrical 〈011〉 Tilt Grain Boundaries in Silicon. physica status solidi (b) 137:1, pages 11-20.
Crossref
A. Amore-Bonapasta, C. Battistoni, A. Lapiccirella, E. Semprini, F. Stefani & N. Tomassini. (1985) Molecular-cluster studies of defects in silicon lattices. Il Nuovo Cimento D 6:1, pages 51-63.
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