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Philosophical Magazine B Volume 51, 1985 - Issue 2: Theory of Localized Electronic States in Condensed Matter
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Letters section

Determination of the extended-state electron mobility in a-Si

A. C. Hourd Carnegie Laboratory of Physics, University of Dundee, Dundee, DD1 4HN, Scotland
&
W. E. Spear Carnegie Laboratory of Physics, University of Dundee, Dundee, DD1 4HN, Scotland
Pages L13-L18 | Received 30 Oct 1984, Accepted 29 Nov 1984, Published online: 27 Sep 2006

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P.A. Bayley & J.M. Marshall. (1996) Transient photoconductivity in a-Si1− C :H thin films. Philosophical Magazine B 73:3, pages 429-444.
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E.Z. Liu, P. Wickboldt, A.E. Wetsel, D. Pang, J.H. Chen & W. Paul. (1994) Mobility field dependence in a-Ge:H, a-SiGe:H, compensated a-Si: H, amorphous multilayer Si/SiGe/Si and the long-range potential fluctuation model. Philosophical Magazine B 70:1, pages 109-120.
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J. Bullot, P. Cordier, M. Gauthier & Y. Almeriouh. (1993) Photoconductivity in hydrogenated amorphous silicon. II. Relaxation of trapped charge carriers. Philosophical Magazine B 67:6, pages 763-772.
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C.E. Nebel & R.A. Street. (1993) Transient hole currents in hydrogenated amorphous silicon at low temperatures and high fields. Philosophical Magazine B 67:3, pages 407-415.
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J.-H. Zhou & S.R. Elliott. (1992) Effect of light soaking on the photoconductivity and recombination in hydrogenated amorphous silicon. Philosophical Magazine B 66:6, pages 801-817.
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A.C. Hourd, D.L. Melville & W.E. Spear. (1991) Electronic properties of amorphous and microcrystalline silicon prepared in a microwave plasma from SiF4 . Philosophical Magazine B 64:5, pages 533-550.
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D.M. Goldie, W.E. Spear & E.Z. Liu. (1990) Electron and hole transport in compensated amorphous silicon. Philosophical Magazine B 62:5, pages 509-525.
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W.E. Spear, P.G. Lecomber & D.M. Goldie. (1990) The investigation of charge transport in compensated amorphous silicon. Critical Reviews in Solid State and Materials Sciences 16:6, pages 389-402.
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WalterE. Spear & CarolynS. Cloude. (1988) Electron and hole transport in the band-tail states of amorphous silicon at low temperatures. Philosophical Magazine B 58:5, pages 467-484.
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N.F. Mott. (1988) The conduction band in non-crystalline semiconductors. Philosophical Magazine B 58:4, pages 369-384.
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D. Goldie, P.G. Le Comber & W.E. Spear. (1988) The electron mobility in amorphous silicon under double injection. Philosophical Magazine Letters 58:2, pages 107-112.
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D. Goldie & W.E. Spear. (1988) The extended-state hole mobility in amorphous silicon. Philosophical Magazine Letters 57:2, pages 135-141.
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F. Djamdji & P.G. Le Comber. (1987) An investigation of the conductivity prefactor in a-Si as a function of Fermi level position using the field-effect experiment. Philosophical Magazine B 56:1, pages 31-50.
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J. Bullot, P. Cordier, M. Gauthier & G. Mawawa. (1987) Dual-beam-modulated photoconductivity in hydrogenated amorphous silicon response-time and drift-mobility measurements. Philosophical Magazine B 55:5, pages 599-614.
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C. Main, R. Russell, J. Berkin & J.M. Marshall. (1987) Transient photoconductivity in n-type a-Si: H. Philosophical Magazine Letters 55:4, pages 189-195.
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D. Mencaraglia & J.P. Kleider. (1987) Transition from diffusive to ballistic capture related to hydrogen incorporation in amorphous silicon. Philosophical Magazine Letters 55:2, pages 63-68.
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F.Z. Bathaei & J.C. Anderson. (1987) Electrical noise measurements in intrinsic amorphous silicon. Philosophical Magazine B 55:1, pages 87-100.
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Carolyn Cloude, W.E. Spear, P.G. Le Comber & A.C. Hourd. (1986) Low-temperature electron transport near the mobility edge of amorphous silicon. Philosophical Magazine B 54:4, pages L113-L118.
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J.M. Marshall, R.A. Street & M.J. Thompson. (1986) Electron drift mobility in amorphous Si: H. Philosophical Magazine B 54:1, pages 51-60.
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A. Doghmane & W.E. Spear. (1986) Determination of the recombination rate constants in amorphous silicon from double-injection experiments. Philosophical Magazine B 53:6, pages 463-475.
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V. Halpern. (1985) The decay rate of transient photocurrents in semiconductors. Philosophical Magazine B 52:4, pages L75-L79.
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E.A. Davis, H. Michiel & G.J. Adriaenssens. (1985) Tail-state distribution and extended-state mobility in a-Si:H. Philosophical Magazine B 52:3, pages 261-270.
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W.E. Spear & P.G. Le Comber. (1985) Transient mobility and lifetime studies in amorphous silicon and their interpretation. Philosophical Magazine B 52:3, pages 247-260.
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Julia P. Ostertag, Stefan Klein, Oliver Schmidt & Rudolf Brüggemann. (2013) Parameter determination for device simulations of thin film silicon solar cells by inverse modeling based on temperature and spectrally dependent measurements. Journal of Applied Physics 113:12, pages 124506.
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E A Schiff. (2004) Drift-mobility measurements and mobility edges in disordered silicons. Journal of Physics: Condensed Matter 16:44, pages S5265-S5275.
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Jui-Fen ChangBaoquan SunDag W. BreibyMartin M. NielsenTheis I. SöllingMark GilesIain McCullochHenning Sirringhaus. (2004) Enhanced Mobility of Poly(3-hexylthiophene) Transistors by Spin-Coating from High-Boiling-Point Solvents. Chemistry of Materials 16:23, pages 4772-4776.
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Monica Brinza, Evguenia V. Emelianova, André Stesmans & Guy J. Adriaenssens. (2011) Influence of the Distribution of Tail States in a-Si:H on the Field Dependence of Carrier Drift Mobilities. MRS Proceedings 808.
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J. A. Schmidt, M. Hundhausen & L. Ley. (2000) Transport properties of films investigated by the moving photocarrier grating technique . Physical Review B 62:19, pages 13010-13015.
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J.A Schmidt, M Hundhausen & L Ley. (2000) Transport properties of amorphous hydrogenated silicon–carbon alloys. Journal of Non-Crystalline Solids 266-269, pages 694-698.
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Henning SirringhausNir TesslerRichard H. Friend. (1998) Integrated Optoelectronic Devices Based on Conjugated Polymers. Science 280:5370, pages 1741-1744.
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G. Marcano, A. R. Zanatta & I. Chambouleyron. (1994) Photoconductivity of intrinsic and nitrogen-doped hydrogenated amorphous germanium thin films. Journal of Applied Physics 75:9, pages 4662-4667.
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Qi Wang, Homer Antoniadis, E. A. Schiff & S. Guha. (1993) Electron-drift-mobility measurements and exponential conduction-band tails in hydrogenated amorphous silicon-germanium alloys. Physical Review B 47:15, pages 9435-9448.
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G. de Rosny, B. Equer & A. Labdi. (1992) Conduction properties of a -Si:H - i - structures: Analysis taking into account the effects of - i space-charge regions . Physical Review B 46:3, pages 1582-1590.
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A. Nakano, P. Vashishta, R. K. Kalia & L. H. Yang. (1992) Probing localization and mobility of an excess electron in a -Si by quantum molecular dynamics . Physical Review B 45:15, pages 8363-8368.
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Robert E. Johanson. (1992) Drift mobility of amorphous semiconductors measured by the traveling-wave technique. Physical Review B 45:8, pages 4089-4112.
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E.Z. Liu, D. Pang, W. Paul & J.H. Chen. (2011) Time-of-Flight Measurement on a-Ge:H and a-SiGe:H Alloys. MRS Proceedings 258.
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D. K. Sharma, K. L. Narasimhan, N. Periasamy & D. R. Bapat. (1991) Temperature dependence of the electron drift mobility in doped and undoped amorphous silicon. Physical Review B 44:23, pages 12806-12808.
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Alejandro J. Hamed. (1991) Persistent photoconductance in doping-modulated and compensated a -Si:H . Physical Review B 44:11, pages 5585-5602.
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Homer Antoniadis & E.A. Schiff. (1991) Unraveling the μτ-mystery in a-Si:H. Journal of Non-Crystalline Solids 137-138, pages 435-438.
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Louis de Ladurantaye, Yves Lépine & Laurent J. Lewis. (1990) Density of localized states in low-mobility materials: A numerical study. Solid State Communications 76:2, pages 97-102.
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M. E. Raikh, S. D. Baranovskii & B. I. Shklovskii. (1990) Dimensional quantization in a -Si:H quantum-well structures: The alloy model . Physical Review B 41:11, pages 7701-7704.
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R.I. Devlen, J. Tauc & E.A. Schiff. (1989) Temperature and electric field dependence of the picosecond electron drift velocity in a-Si:H. Journal of Non-Crystalline Solids 114, pages 567-569.
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J.M. Marshall, C. Pickup, A. Browne, J. McNeil, C. Hotham, C. Main & J. Berkin. (1989) Band tail states in a-Si:H — influence of preparation conditions and techniques for characterisation. Journal of Non-Crystalline Solids 114, pages 339-341.
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A.G. Kazanskii & I.V. Klimashin. (1989) The influence of temperature on recombination of carriers in undoped a-Si:H. Journal of Non-Crystalline Solids 114, pages 313-315.
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Hiroaki Kakinuma. (1989) Fermi-level-dependent mobility-lifetime product in -Si: H . Physical Review B 39:14, pages 10473-10476.
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G. F. Seynhaeve, R. P. Barclay, G. J. Adriaenssens & J. M. Marshall. (1989) Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous silicon. Physical Review B 39:14, pages 10196-10205.
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Vincenzo Augelli, Teresa Ligonzo, Roberto Murri & Luigi Schiavulli. (1989) Photovoltaic characterization of amorphous hydrogenated and chlorinated silicon films. Thin Solid Films 170:2, pages 163-170.
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M.J. Powell. (1989) The physics of amorphous-silicon thin-film transistors. IEEE Transactions on Electron Devices 36:12, pages 2753-2763.
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R. Vanderhaghen. (1988) Electron-transport parameters and tail-state distribution in hydrogenated amorphous silicon obtained from position and tail-state matrix simulation of drift experiments. Physical Review B 38:15, pages 10755-10775.
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W.E. Spear. (1988) Some new results on the electronic properties of a-Si and a-SiNx. Thin Solid Films 163, pages 85-95.
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Finley R. Shapiro & Yaneer Bar-Yam. (1988) Microscopic transient simulation of semiconductors and insulators. Journal of Applied Physics 64:4, pages 2185-2188.
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D. Goldie, P. G. LeComber & W. E. Spear. (2011) The Electron Mobility in Amorphous Silicon Under Double Injection. MRS Proceedings 118.
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Walter Spear, Carolyn Cloude, David Goldie & Peter LeComber. (1987) Transport in the electron tail states of amorphous silicon. Journal of Non-Crystalline Solids 97-98, pages 15-22.
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W.E. Spear. (1987) The investigation of transport properties in a-si by fast transient techniques. Journal of Non-Crystalline Solids 90:1-3, pages 171-178.
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