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Philosophical Magazine B Volume 51, 1985 - Issue 2: Theory of Localized Electronic States in Condensed Matter
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Original Articles

Defect calculations in semiconductors Theoretical principles as illustrated by current calculations

A. M. Stoneham Theoretical Physics Division, AERE Harwell, Oxfordshire, OX11 ORA, England
Pages 161-176 | Received 07 Aug 1984, Accepted 21 Sep 1984, Published online: 27 Sep 2006

Citations (11)

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Read on this site (2)

A.M. Stoneham & M.J. L. Sangster. (1985) The diffusion of ions with multiple valence The oxidation of transition metal alloys. Philosophical Magazine B 52:3, pages 717-727.
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J. Robertson. (1985) Defects in amorphous semiconductors. Philosophical Magazine B 51:2, pages 183-192.
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Articles from other publishers (9)

B. A. Akimov, A. V. Dmitriev, D. R. Khokhlov & L. I. Ryabova. (1993) Carrier Transport and Non-Equilibrium Phenomena in Doped PbTe and Related Materials. Physica Status Solidi (a) 137:1, pages 9-55.
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C K Ong & B C Chan. (1989) Surface reconstruction on Si(100) studied by the CNDO method. Journal of Physics: Condensed Matter 1:25, pages 3931-3938.
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C K Ong & L P Tay. (1989) Chemisorption of fluorine and chlorine on a Si(111) surface. Journal of Physics: Condensed Matter 1:6, pages 1071-1076.
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A M Stoneham. (1989) Defect Migration in Sollids: Microscopic Calculation of Diffusion Rates. Physica Scripta T25, pages 17-25.
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M. Wautelet, E. D. Gehain & P. Quenon. (2006) Modelling the Role of Electronically Excited States in Laser‐Assisted Phenomena. physica status solidi (b) 149:2, pages 465-475.
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Yu.Ya. Gurevich & A.K. Ivanov-Shits. 1988. III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials. III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials 229 372 .
C.K. ong & G.S. khoo. (1988) Determination of CNDO parameters for germanium and their application to simple germanium molecules. Journal of Physics and Chemistry of Solids 49:8, pages 883-886.
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C K Ong & G S Khoo. (1987) Models for two intense Si-H infrared stretching bands in FZ-Si grown in hydrogen. Journal of Physics C: Solid State Physics 20:3, pages 419-423.
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J. B. Messerschmitt. (2006) Spectralphotometrische Untersuchungen einiger photographischer Sensibilisatoren. Annalen der Physik 261:8, pages 655-673.
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