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Original Articles

Defects in amorphous semiconductors

Pages 183-192 | Received 07 Aug 1984, Accepted 21 Sep 1984, Published online: 27 Sep 2006

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F. Rochet, S. Rigo, M. Froment, C. d'Anterroches, C. Maillot, H. Roulet & G. Dufour. (1986) The thermal oxidation of silicon the special case of the growth of very thin films. Advances in Physics 35:3, pages 237-274.
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Yuzheng Guo & John Robertson. (2017) Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer InSe. Physical Review Materials 1:4.
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Yuzheng Guo & John Robertson. (2015) Vacancy and Doping States in Monolayer and bulk Black Phosphorus. Scientific Reports 5:1.
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Y.B. Wang, W.S. Dong, G. Zhao, J.X. Ding, S.H. Li & Y.J. Ge. (2012) Chain structure of liquid Se at high temperature and pressure investigated by ab initio molecular dynamics simulations. Journal of Non-Crystalline Solids 358:5, pages 873-879.
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Roberto Murri & Nicola Pinto. 2002. Handbook of Thin Films. Handbook of Thin Films 369 401 .
M. Majid, S. Bénazeth, C. Souleau & J. Purans. (1998) XAFS study of interchain and intrachain order in glasses: Nearest neighbors . Physical Review B 58:10, pages 6104-6114.
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F Abd El-Salam, M. Fadel & K Sedeek. (1994) Temperature and thickness dependence of photoconductivity and density-of-states distribution for Bi doped Ge20S80. Vacuum 45:8, pages 835-839.
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A. Tabata, K. Tomiita, Y. Suzuoki & T. Mizutani. 1992. Amorphous and Crystalline Silicon Carbide IV. Amorphous and Crystalline Silicon Carbide IV 245 251 .
D. Hohl & R. O. Jones. (1991) First-principles molecular-dynamics simulation of liquid and amorphous selenium. Physical Review B 43:5, pages 3856-3870.
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F. Rochet, G. Dufour, H. Roulet, B. Pelloie, J. Perrière, E. Fogarassy, A. Slaoui & M. Froment. (1988) Modification of SiO through room-temperature plasma treatments, rapid thermal annealings, and laser irradiation in a nonoxidizing atmosphere. Physical Review B 37:11, pages 6468-6477.
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M. Springborg & R. O. Jones. (1988) Sulfur and selenium helices: Structure and electronic properties. The Journal of Chemical Physics 88:4, pages 2652-2658.
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H. -J. Unger. (1987) Study of the single-particle energy spectrum of disordered systems: III. The two-band case. Zeitschrift f�r Physik B Condensed Matter 66:1, pages 7-20.
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K. L. Bhatia, D. P. Gosain, G. Parthasarathy & E. S. R. Gopal. (1986) Bismuth-doped amorphous germanium sulfide semiconductors. Physical Review B 34:12, pages 8786-8793.
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J. Shirafuji, S. Nagata & K. Shirakawa. (1986) γ-Irradiation Effect on Electronic Properties in Hydrogenated Amorphous Silicon. physica status solidi (a) 98:1, pages 311-318.
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H. -J. Unger. (1986) Study of the single-particle energy spectrum of disordered systems. Zeitschrift f�r Physik B Condensed Matter 64:3, pages 273-287.
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M. Tajima, H. Okushi, S. Yamasaki & K. Tanaka. (1986) Strong electron-phonon coupling in defect luminescence in P-doped a -Si:H . Physical Review B 33:12, pages 8522-8524.
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V. V. Vasilev, I. P. Mikhailovskii & K. K. Svitashev. (1986) Effect of hydrogen on photoluminescence spectra of silicon nitride amorphous films. physica status solidi (a) 95:1, pages K37-K42.
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G.J. Adriaenssens, G. Seynhaeve & S. De Greef. (1985) Gap-state energy levels in vitreous As2Se4. Journal of Non-Crystalline Solids 77-78, pages 1187-1190.
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R. A. B. Devine, C. Fiori & J. Robertson. (2011) The Influence of Irradiation Temperature on U.V. Induced Defect Creation in Dry Silica. MRS Proceedings 61.
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