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Original Articles

Tail-state distribution and extended-state mobility in a-Si:H

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Pages 261-270 | Received 22 Mar 1985, Accepted 01 Apr 1985, Published online: 27 Sep 2006

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Read on this site (5)

A.K. Browne, J.M. Marshall, D.M. Goldie & A.R. Hepburn. (1994) Transport properties of glow-discharge amorphous silicon grown under different deposition conditions. Philosophical Magazine B 69:2, pages 349-358.
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Kazuro Murayamaand & Mitsunori Mori. (1992) Monte Carlo simulation of dispersive transient transport in percolation clusters. Philosophical Magazine B 65:3, pages 501-524.
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J.M. Marshall, R.A. Street & M.J. Thompson. (1986) Electron drift mobility in amorphous Si: H. Philosophical Magazine B 54:1, pages 51-60.
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Articles from other publishers (7)

O. Gutschker & R. Bindemann. (2006) Relaxation and Recombination of Photoexcited Carriers in a‐Si: H Calculated by Monte‐Carlo Simulations. physica status solidi (b) 170:1, pages 339-351.
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R. Vanderhaghen. (1988) Electron-transport parameters and tail-state distribution in hydrogenated amorphous silicon obtained from position and tail-state matrix simulation of drift experiments. Physical Review B 38:15, pages 10755-10775.
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C. Longeaud, G. Fournet & R. Vanderhaghen. (1988) Determination of the density of states of the conduction-band tail in hydrogenated amorphous silicon. Physical Review B 38:11, pages 7493-7510.
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C.E. Nebel, H.C. Weller & G.H. Bauer. (1988) Electron mobility and lifetime in a-Si/sub 1-x/Ge/sub x/:H. Electron mobility and lifetime in a-Si/sub 1-x/Ge/sub x/:H.
Nevill F. Mott. (1987) Conduction at a mobility edge. Journal of Non-Crystalline Solids 97-98, pages 531-538.
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N Mott. (1987) The mobility edge since 1967. Journal of Physics C: Solid State Physics 20:21, pages 3075-3102.
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Guy J. Adriaenssens. (2011) Defect Levels in the Gap of Arsenic Selenide Glasses. MRS Proceedings 61.
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