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Original Articles

The effects of applied and internal strain on the electronic propertiesof amorphous silicon

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Pages 343-358 | Received 05 Jun 1986, Accepted 25 Jul 1986, Published online: 13 Sep 2006

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J. Robertson. (1991) Electronic structure of silicon nitride. Philosophical Magazine B 63:1, pages 47-77.
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Xun-Ming Deng. (1990) Strain-relief spiral buckling of a-Si:H films. Philosophical Magazine Letters 61:5, pages 281-284.
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Articles from other publishers (42)

Peyman Servati & Arokia Nathan. 2017. Springer Handbook of Electronic and Photonic Materials. Springer Handbook of Electronic and Photonic Materials 1 1 .
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A. L. Salas-Villasenor, I. Mejia & M. A. Quevedo-Lopez. (2014) Transparent and Flexible Thin Film Transistors with Solution-Based Chalcogenide Materials. ECS Journal of Solid State Science and Technology 3:4, pages P107-P110.
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S.W. Tsao, T.C. Chang, P.C. Yang, M.C. Wang, S.C. Chen, J. Lu, T.S. Chang, W.C. Kuo, W.C. Wu & Y. Shi. (2010) Low-temperature characteristics of a-Si:H thin-film transistor under mechanical strain. Solid-State Electronics 54:12, pages 1632-1636.
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M.C. Wang, S.W. Tsao, T.C. Chang, Y.P. Lin, Po-Tsun Liu & J.R. Chen. (2010) Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors. Solid-State Electronics 54:11, pages 1485-1487.
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K. Jason Maung, H. Thomas Hahn & Y.S. Ju. (2010) Multifunctional integration of thin-film silicon solar cells on carbon-fiber-reinforced epoxy composites. Solar Energy 84:3, pages 450-458.
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Helena Gleskova & Sigurd Wagner. (2008) Electrical response to uniaxial tensile strain of a-Si:H TFTs fabricated on polyimide foils. Journal of Non-Crystalline Solids 354:19-25, pages 2627-2631.
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M. C. Wang, T. C. Chang, Po-Tsun Liu, S. W. Tsao & J. R. Chen. (2007) Analysis of Parasitic Resistance and Channel Sheet Conductance of a-Si:H TFT under Mechanical Bending. Electrochemical and Solid-State Letters 10:3, pages J49.
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J. C. STURM, P. I. HSU, H. GLESKOVA, R. BHATTACHARYA & S. WAGNER. (2011) DEFORMABLE ELECTRONIC SURFACES. International Journal of High Speed Electronics and Systems 16:01, pages 365-374.
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Peyman Servati & Arokia Nathan. 2007. Springer Handbook of Electronic and Photonic Materials. Springer Handbook of Electronic and Photonic Materials 1107 1119 .
P. Servati & A. Nathan. (2005) Functional Pixel Circuits for Elastic AMOLED Displays. Proceedings of the IEEE 93:7, pages 1257-1264.
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Peyman Servati & Arokia Nathan. (2005) Orientation-dependent strain tolerance of amorphous silicon transistors and pixel circuits for elastic organic light-emitting diode displays. Applied Physics Letters 86:3, pages 033504.
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H. Gleskova, P.I. Hsu, Z. Xi, J.C. Sturm, Z. Suo & S. Wagner. (2004) Field-effect mobility of amorphous silicon thin-film transistors under strain. Journal of Non-Crystalline Solids 338-340, pages 732-735.
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P.I. Hsu, M. Huang, H. Gleskova, Z. Xi, Z. Suo, S. Wagner & J.C. Sturm. (2004) Effects of Mechanical Strain on TFTs on Spherical Domes. IEEE Transactions on Electron Devices 51:3, pages 371-377.
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P. Servati, S. Tao, E. Horne, D. Striakhilev, K. Sakariya & A. Nathan. (2011) Mechanically strained a-Si:H AMOLED driver circuits. MRS Proceedings 814.
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S Alexandrova, P Danesh & I.A Maslyanitsyn. (2002) SHG and AFM study of PECVD a-Si:H films. Vacuum 69:1-3, pages 391-394.
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H. Gleskova, S. Wagner, W. Soboyejo & Z. Suo. (2002) Electrical response of amorphous silicon thin-film transistors under mechanical strain. Journal of Applied Physics 92:10, pages 6224-6229.
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H. Gleskova, S. Wagner, W. Soboyejo & Z. Suo. (2011) Effects of Mechanical Strain on Amorphous Silicon Thin-Film Transistors. MRS Proceedings 715.
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L. Biagiotti, M. Gavesi, C. Melchiorri & B. Ricco. (2002) A new stress sensor for force/torque measurements. A new stress sensor for force/torque measurements.
P. Danesh, B. Pantchev, D. Grambole & B. Schmidt. (2001) Depth distributions of hydrogen and intrinsic stress in a-Si:H films prepared from hydrogen-diluted silane. Journal of Applied Physics 90:6, pages 3065-3068.
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B Pantchev, P Danesh, I Savatinova, E Liarokapis, B Schmidt & D Grambole. (2001) The effect of structural disorder on mechanical stress in a-Si:H films. Journal of Physics D: Applied Physics 34:17, pages 2589-2592.
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P Danesh & B Pantchev. (2000) Mechanical stress in thin a-Si:H films. Semiconductor Science and Technology 15:10, pages 971-974.
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S. Alexandrova, P. Danesh & I. A. Maslyanitsyn. (2000) Second harmonic generation in hydrogenated amorphous silicon. Physical Review B 61:16, pages 11136-11138.
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M. M. de LimaJr.Jr., R. G. Lacerda, J. Vilcarromero & F. C. Marques. (1999) Coefficient of thermal expansion and elastic modulus of thin films. Journal of Applied Physics 86:9, pages 4936-4942.
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F. C. Marques, P. Wickboldt, D. Pang, J. H. Chen & W. Paul. (1998) Stress and thermomechanical properties of amorphous hydrogenated germanium thin films deposited by glow discharge. Journal of Applied Physics 84:6, pages 3118-3124.
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P. Danesh, A. Toneva, I. Savatinova & E. Liarokapis. (1996) Correlations between structural and optoelectronic properties of a-Si:H grown by homogeneous chemical vapor deposition. Journal of Non-Crystalline Solids 204:3, pages 265-272.
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Wan-Shick Hong, Fan Zhong & Victor Perez-Mendez. (2011) Mechanical and Electrical properties of Hydrogen or Helium Diluted a-Si:H Prepared at Low Temperatures. MRS Proceedings 420.
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F. C. Marques, R. G. Lacerda, M. M. Lima & J. Vilcarromero. (2006) Stress and Elastic Constants of Amorphous Germanium Nitrogen Alloys. physica status solidi (b) 192:2, pages 549-554.
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W.S. Hong, J.S. Drewery, T. Jing, H. Lee, S.N. Kaplan, A. Mireshghi & V. Perez-Mendez. (1995) Thick (∼ 50 μm) amorphous silicon p-i-n diodes for direct detection of minimum ionizing particles. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 365:1, pages 239-247.
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W.S. Hong, A. Mireshghi, J.S. Drewery, T. Jing, Y. Kitsuno, H. Lee, S.N. Kaplan & V. Perez-Mendez. (1995) Charged particle detectors based on high quality amorphous silicon deposited with hydrogen or helium dilution of silane. IEEE Transactions on Nuclear Science 42:4, pages 240-246.
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W. S. Hong, V. Petrova-Koch, J. Drewery, T. Jing, H. Lee & V. Perez-Mendez. (2011) Thick Amorphous Silicon Layers Suitable for the Realization of Radiation Detectors. MRS Proceedings 377.
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W.S. Hong, A. Mireshghi, J.S. Drewery, T. Jing, Y. Kitsuno, H. Lee, S.N. Kaplan & V. Perez-Mendez. (1995) Charged particle detectors based on high quality amorphous silicon deposited with hydrogen or helium dilution of silane. Charged particle detectors based on high quality amorphous silicon deposited with hydrogen or helium dilution of silane.
Wan-Shick Hong, J. C. Delgado, O. Ruiz & V. Perez-Mendez. (2011) Growth of Hydrogenated Amorphous Silicon (A-Si:H) on Patterned Substrates for Increased Mechanical Stability. MRS Proceedings 356.
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A. Mireshghi, W.S. Hong, J. Drewery, T. Jing, S.N. Kaplan, H.K. Lee & V. Perez-Mendez. (2011) Improved Electrical and Transport Characteristics of Amorphous Silicon by Enriching with Microcrystalline Silicon. MRS Proceedings 336.
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Paul Wickboldt, Francisco Marques, Scott J. Jones, Dawen Pang, Warren A. Turner & William Paul. (1991) Stress measurement of glow discharge produced a-Ge:H thin films and its relation to electronic and structural properties. Journal of Non-Crystalline Solids 137-138, pages 83-86.
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S.G. Ferguson & W.E. Spear. (1989) Temperature compensation of amorphous silicon strain gauges. Sensors and Actuators 20:3, pages 249-251.
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Michito Utsunomiya & Akira Yoshida. (1989) Effect of mechanical strain on electrical characteristics of hydrogenated amorphous silicon junctions. Journal of Applied Physics 66:1, pages 308-311.
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Michito Utsunomiya & Akira Yoshida. (1988) Strain dependence of p ‐ i ‐ n hydrogenated amorphous silicon junctions . Applied Physics Letters 53:23, pages 2296-2298.
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Michito Utsunomiya & Akira Yoshida. (1988) Piezoresistive effect of hydrogenated microcrystalline silicon films. Applied Surface Science 33-34, pages 1222-1228.
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Harald Overhof. (1987) The prefactor of the dc conductivity in amorphous semiconductors. Journal of Non-Crystalline Solids 97-98, pages 539-542.
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Nevill F. Mott. (1987) Conduction at a mobility edge. Journal of Non-Crystalline Solids 97-98, pages 531-538.
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W. E. Spear, B. Dunnett & P. G. Lecomber. (2011) Substitutional and Interstitial Doping of Amorphous Silicon Nitride. MRS Proceedings 95.
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