Citations (27)
Keep up to date with the latest research on this topic with citation updates for this article.
Read on this site (2)
F. Di Quarto & M. Santamaria. (2004) Semiconductor electrochemistry approach to passivity and passivity breakdown of metals and metallic alloys. Corrosion Engineering, Science and Technology 39:1, pages 71-81.
Read now
Read now
J.P. Kleider, C. Longeaud, O. Glodt, D. Mencaraglia & R. Vanderhaghen. (1991) Field-profile determination in amorphous Si-Ge alloy Schottky barriers. Philosophical Magazine B 64:3, pages 367-387.
Read now
Read now
Articles from other publishers (25)
F. Di Quarto, F. Di Franco, M. Santamaria & F. La Mantia. 2018. Encyclopedia of Interfacial Chemistry. Encyclopedia of Interfacial Chemistry
75
92
.
F. Di Quarto, F. Di Franco, S. Miraghaei, M. Santamaria & F. La Mantia. (2017) The Amorphous Semiconductor Schottky Barrier Approach to Study the Electronic Properties of Anodic Films on Ti. Journal of The Electrochemical Society 164:9, pages C516-C525.
Crossref
Crossref
F.La Mantia, M. Fan, J. Stojadinović, M. Santamaria, S. Miraghaei & F.Di Quarto. (2015) Assessment on the use of the amorphous semiconductor theory for the analysis of oxide films. Electrochimica Acta 179, pages 460-468.
Crossref
Crossref
Jean-Paul Kleider, José Alvarez, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret & Olga Maslova. (2015) Revisiting the theory and usage of junction capacitance: Application to high efficiency amorphous/crystalline silicon heterojunction solar cells. Solar Energy Materials and Solar Cells 135, pages 8-16.
Crossref
Crossref
Candace K. Chan, Harun Tüysüz, Artur Braun, Chinmoy Ranjan, Fabio La Mantia, Benjamin K. Miller, Liuxian Zhang, Peter A. Crozier, Joel A. Haber, John M. Gregoire, Hyun S. Park, Adam S. Batchellor, Lena Trotochaud & Shannon W. Boettcher. 2016. Solar Energy for Fuels. Solar Energy for Fuels
253
324
.
Marcelo G. De Greef & Francisco A. Rubinelli. (2015) Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used. physica status solidi (b) 252:1, pages 170-180.
Crossref
Crossref
O.A. Maslova, M.E. Gueunier-Farret, J. Alvarez, A.S. Gudovskikh, E.I. Terukov & J.P. Kleider. (2012) Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments. Journal of Non-Crystalline Solids 358:17, pages 2007-2010.
Crossref
Crossref
Fabio La Mantia, Jelena Stojadinović, Monica Santamaria & Francesco Di Quarto. (2012) Dynamic Response of Thin-Film Semiconductors to AC Voltage Perturbations. ChemPhysChem 13:12, pages 2910-2918.
Crossref
Crossref
Jean-Paul Kleider. 2012. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells
405
444
.
F. La Mantia, H. Habazaki, M. Santamaria & F. Di Quarto. (2010) A critical assessment of the Mott-Schottky analysis for the characterisation of passive film-electrolyte junctions. Russian Journal of Electrochemistry 46:11, pages 1306-1322.
Crossref
Crossref
F. La Mantia, M. Santamaria, F. Di Quarto & H. Habazaki. (2010) Physicochemical Characterization of Thermally Aged Anodic Films on Magnetron-Sputtered Niobium. Journal of The Electrochemical Society 157:7, pages C258.
Crossref
Crossref
Francesco Di Quarto, Fabio La Mantia & Monica Santamaria. 2009. Modern Aspects of Electrochemistry, No. 46. Modern Aspects of Electrochemistry, No. 46
231
316
.
F. Di Quarto, F. La Mantia & M. Santamaria. (2007) Recent advances on physico-chemical characterization of passive films by EIS and differential admittance techniques. Corrosion Science 49:1, pages 186-194.
Crossref
Crossref
A. G. Muñoz & G. Staikov. (2006) Electrodeposition of metals on anodized thin Nb films. Journal of Solid State Electrochemistry 10:5, pages 329-336.
Crossref
Crossref
F. Di Quarto, F. La Mantia & M. Santamaria. (2005) Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies. Electrochimica Acta 50:25-26, pages 5090-5102.
Crossref
Crossref
J.P. Kleider. (2003) Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors. Thin Solid Films 427:1-2, pages 127-132.
Crossref
Crossref
F. Di Quarto, S. Piazza, M. Santamaria & C. Sunseri. 2002. Handbook of Thin Films. Handbook of Thin Films
373
414
.
H. M. Gupta. (1997) A Generalized Theory of Electrical Characteristics of Schottky Barriers for Amorphous Materials. physica status solidi (a) 164:2, pages 733-745.
Crossref
Crossref
J. P. Kleider & D. Mencaraglia. (1995) Theoretical study of the quasistatic capacitance of metal–insulator–semiconductor structures in amorphous semiconductors. Journal of Applied Physics 78:6, pages 3857-3866.
Crossref
Crossref
Carlos da Fonseca, Mário Guerreiro Ferreira & Manuel da Cunha Belo. (1994) Modelling of the impedance behaviour of an amorphous semiconductor schottky barrier in high depletion conditions. Application to the study of the titanium anodic oxide/electrolyte junction. Electrochimica Acta 39:14, pages 2197-2205.
Crossref
Crossref
N. Anisimova, V. Avanesyan, V. Bordovski, R. Castro & A. Nagaytcev. (1994) Polarization properties of layers in As-Se modified system. Polarization properties of layers in As-Se modified system.
F. Di Quarto, V.O. Aimiuwu, S. Piazza & C. Sunseri. (1991) Amorphous semiconductor—electrolyte junction. Energetics at the a-WO3—electrolyte junction. Electrochimica Acta 36:11-12, pages 1817-1822.
Crossref
Crossref
Hideharu M. Matsuura. (1990) Simulation of high-frequency capacitance-voltage characteristics of amorphous/crystalline heterojunctions. Journal of Applied Physics 68:3, pages 1138-1142.
Crossref
Crossref
F. Di Quarto, S. Piazza & C. Sunseri. (1990) Amorphous semiconductor—electrolyte junction. Impedance study on the a-Nb2 O5—electrolyte junction. Electrochimica Acta 35:1, pages 99-107.
Crossref
Crossref
J.P. Kleider, D. Mencaraglia & Z. Djebbour. (1989) A new treatment of Schottky barrier capacitance-voltage characteristics: Discussion of usual assumptions and determination of the deep gap states density in a-Si1−xGex:H alloys. Journal of Non-Crystalline Solids 114, pages 432-434.
Crossref
Crossref