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Philosophical Magazine B Volume 54, 1986 - Issue 5
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Original Articles

Level of dangling-bond centres in a-Si: H

I. Hirabayashi Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo, 106, Japan; Max-Planck-Institut fur Festkorperforschung, Heisenbergstrasse 1, D-7000, Stuttgart, F.R. Germany
&
K. Morigaki Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo, 106, Japan
Pages L119-L123 | Received 20 May 1986, Accepted 12 Sep 1986, Published online: 13 Sep 2006

Citations (8)

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Read on this site (2)

W. Grevendonk, M. Verluyten, J. Dauwen, G.J. Adriaenssens & J. Bezemer. (1990) Optical modulation spectroscopy of dangling bonds in a-Si: H. Philosophical Magazine B 61:3, pages 393-402.
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K. Abe, H. Okamoto, Y. Nitta, Y. Tsutsumi, K. Hattori & Y. Hamakawa. (1988) Gap states in undoped amorphous silicon studied by below-gap modulated photocurrent spectroscopy. Philosophical Magazine B 58:2, pages 171-184.
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Articles from other publishers (6)

Kazuo Morigaki, Sándor Kugler & Koichi Shimakawa. 2017. Amorphous Semiconductors. Amorphous Semiconductors 61 155 .
. 2003. Advances in Amorphous Semiconductors. Advances in Amorphous Semiconductors 158 202 .
J. Dauwen & W. Grevendonk. (1989) Temperature dependence of photo-induced absorption in several a-Si:H samples with different hydrogen content. Journal of Non-Crystalline Solids 114, pages 295-297.
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W Grevendonk, J Dauwen, G.J Adriaenssens, G Seynhaeve, H Strauven, P Nagels & J Smeets. (1988) Optical modulation spectroscopy in a-Si:H at room temperature. Solid State Communications 66:8, pages 801-803.
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R. Könenkamp. (1987) Detection of deep-lying defects in -SiH: C alloy films . Physical Review B 36:5, pages 2938-2941.
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H. Yokomichi & K. Morigaki. (1987) Electron-nuclear double resonance of dangling-bond centres associated with hydrogen incorporation in aSi:H. Solid State Communications 63:7, pages 629-632.
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