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Philosophical Magazine B Volume 54, 1986 - Issue 2
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Letters section

In-situ determination of potential profiles in a-Si: H

J. M. Siefert Equipe Synthèse de Couches Minces pour l'Energétique (ER 258), Laboratoire de Physique Nucléaire des Hautes Energies, Ecole Polytechnique, 91128, Palaiseau, Cedex, France
&
G. de Rosny Equipe Synthèse de Couches Minces pour l'Energétique (ER 258), Laboratoire de Physique Nucléaire des Hautes Energies, Ecole Polytechnique, 91128, Palaiseau, Cedex, France
Pages L57-L62 | Received 19 May 1986, Accepted 07 Jul 1986, Published online: 27 Sep 2006

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S. B. Li, Z. M. Wu, W. Li, N. M. Liao & Y. D. Jiang. (2007) Investigation of the microstructure and optical properties of hydrogenated polymorphous silicon films prepared with pure silane. Philosophical Magazine 87:35, pages 5539-5549.
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A. Hadjadj, B. Equer, A. Beorchia & P. Roca Cabarrocas. (2002) Contact potential measurements with a local Kelvin probe. Philosophical Magazine B 82:11, pages 1257-1266.
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A. Hadjadj, P. Rocai Cabarrocas & B. Equer. (2000) Mobility-edge shift during diborane doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide. Philosophical Magazine B 80:7, pages 1317-1326.
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A. Hadjadj, P. Roca Cabarrocas$suffix/text()$suffix/text() & B. Equer. (1997) Quantitative in-situ Kelvin probe study of boron doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide. Philosophical Magazine B 76:6, pages 941-950.
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Articles from other publishers (13)

A Hadjadj, M Favre, B Equer & P Roca i Cabarrocas. (1998) In-situ Kelvin probe and ellipsometry study of the doping of a-Si:H and a-SiC:H layers:. Solar Energy Materials and Solar Cells 51:2, pages 145-153.
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L. Chahed, M. L. Thèye, D. Fournier, J. P. Roger, A. C. Boccara, Y. M. Li, W. A. Turner & W. Paul. (1991) Surface effects in hydrogenated amorphous silicon studied by photothermal-deflection experiments. Physical Review B 43:18, pages 14488-14497.
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P. Roca i Cabarrocas, M. Stchakovsky, B. Drevillon, F. Fortuna & H. Bernas. (1991) Kinetics of formation of silicides in a-Si:H/Pd interfaces monitored by in situ ellipsometry and kelvin probe techniques. Journal of Non-Crystalline Solids 137-138, pages 1055-1058.
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J. K. Arch & S. J. Fonash. (1990) Computer simulation of actual and Kelvin-probe-measured potential profiles: Application to amorphous films. Journal of Applied Physics 68:2, pages 591-600.
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Jean-Marie Siefert. (1989) In-situ determination of surface states in undoped and doped a-Si:H. Journal of Non-Crystalline Solids 114, pages 744-746.
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B. Drevillon. (1989) In situ studies of the growth of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids 114, pages 139-144.
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P. Roca i Cabarrocas, Satyendra Kumar & B. Drevillon. (1989) I n   s i t u study of the thermal decomposition of B2H6 by combining spectroscopic ellipsometry and Kelvin probe measurements . Journal of Applied Physics 66:7, pages 3286-3292.
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B. Drevillon, Satyendra Kumar, P. Roca i Cabarrocas & J. M. Siefert. (1989) I n   s i t u investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces . Applied Physics Letters 54:21, pages 2088-2090.
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K. Winer, I. Hirabayashi & L. Ley. (1988) Distribution of occupied near-surface band-gap states in a -Si:H . Physical Review B 38:11, pages 7680-7693.
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K. Winer & L. Ley. (1988) Effects of oxidation on surface band-gap states in a -Si:H . Physical Review B 37:14, pages 8363-8369.
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K. Winer & L. Ley. (1987) Surface states and the intrinsic valence band tail in a-Si:H. Journal of Non-Crystalline Solids 97-98, pages 703-706.
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K. Winer & L. Ley. (1987) Surface states and the exponential valence-band tail in a -Si:H . Physical Review B 36:11, pages 6072-6078.
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Jerzy Kanicki. (2011) Metal / Hydrogenated Amorphous Silicon Interfaces. MRS Proceedings 95.
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