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Philosophical Magazine B Volume 54, 1986 - Issue 3
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Original Articles

Excitation and temperature dependence of the photo-induced excess conductivity in doping-modulated amorphous silicon

James Kakalios Department of Physics and the James Franck Institute, The University of Chicago, Chicago, Illinois, 60637, U.S.A.; Xerox PARC, 3333 Coyte Hill Road, Palo Alto, California, 94304, U.S.A.
Pages 199-218 | Received 25 Sep 1985, Accepted 22 Feb 1986, Published online: 27 Sep 2006

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J.P. Conde, M. Silva, V. Chu, H. Gleskova, K. Vasanth, S. Wagner, D.S. Shen, P. Popovicf, S. Grebner & R. Schwarz. (1996) In-plane photoconductivity in amorphous silicon doping multilayers. Philosophical Magazine B 74:4, pages 331-347.
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A. Hamed & H. Fritzsche. (1991) Persistent photoconductance in a-Si: H/a-SiNx: H multilayers. Philosophical Magazine B 63:1, pages 33-46.
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A. Hamed & H. Fritzsche. (1989) Towards understanding persistent photoconductance in doping modulated amorphous silicon. Philosophical Magazine Letters 60:4, pages 171-175.
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A. Vomvas & H. Fritzsche. (1987) Dependence of the persistent photoconductivity in doping-modulated a-Si: H multilayers on the exposure temperature. Philosophical Magazine Letters 56:5, pages 197-201.
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Articles from other publishers (30)

A.V. Birukov, A.V. Fenuchin, A.G. Kazanskii & E.I. Terukov. (2003) Light-induced effects in a-Si:H(Er). Materials Science and Engineering: B 105:1-3, pages 153-156.
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A. G. Kazanskii, H. Mell, E. I. Terukov & P. A. Forsh. (2003) Photoinduced conductivity change in erbium-doped amorphous hydrogenated silicon films. Semiconductors 37:7, pages 766-768.
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Martin Stutzmann & Christoph E. Nebel. 2003. digital Encyclopedia of Applied Physics. digital Encyclopedia of Applied Physics.
D. Quicker, P. W. West & J. Kakalios. (2011) Persistent Photoconductivity, the Staebler-Wronski Effect, and Long-Range Disorder in a-Si:H. MRS Proceedings 467.
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J.K. Rath. (1995) Mechanism of defect creation and light induced changes in compensated α-Si: H(B, Li) and α-Si: H(B, P) films. Solid State Communications 94:3, pages 247-250.
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S.L. Wang, J.M. Viner, M. Anani & P.C. Taylor. (1993) Persistent photoconductivity in a-Si1−xSx:H at low sulfur concentration. Journal of Non-Crystalline Solids 164-166, pages 251-254.
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Hidetoshi Oheda. (1993) Enhanced drift mobility under in-plane conduction in doping-modulated amorphous silicon multilayers. Journal of Applied Physics 73:7, pages 3396-3401.
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J Bertomeu, JM Asensi, J Puigdollers, J Andreu & JL Morenza. (1993) Structure of a-Si: H/a-Si1−xCx: H multilayers deposited in a reactor with automated substrate holder. Vacuum 44:2, pages 129-134.
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Hidetoshi Oheda. (1992) Current–voltage characteristics under in-plane conduction in doping-modulated amorphous silicon multilayers. Journal of Applied Physics 71:10, pages 5053-5058.
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Alejandro J. Hamed. (1991) Persistent photoconductance in doping-modulated and compensated a -Si:H . Physical Review B 44:11, pages 5585-5602.
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B. Everitt & J. Kakalios. (1991) Test of the thermal equilibration model for persistent photoconductivity in doping-modulated amorphous silicon. Physical Review B 43:8, pages 6820-6823.
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D.H. Zhang & D. Haneman. (1991) Conductivity and defects in amorphous silicon doping modulated multilayers. Thin Solid Films 198:1-2, pages 43-51.
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A. Hamed, H. Fritzsche & S. Köhler. (2011) Temperature Dependence of Metastable Defect Creation in a-SiN x :H . MRS Proceedings 219.
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A. Hamed, H. Fritzsche, X.-M. Deng, S. Köhler & R. Gupta. (1991) Metastable defect states and equilibration temperatures in a-SiNx:H, a-SiOx:H and a-SiCx:H. Journal of Non-Crystalline Solids 137-138, pages 287-290.
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J.K. Rath, W. Fuhs & H. Mell. (1991) Metastable photo-induced changes in compensated a-Si:H films. Journal of Non-Crystalline Solids 137-138, pages 279-282.
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Tineke Thio, R. J. Birgeneau, A. Cassanho & M. A. Kastner. (1990) Determination of the energy gap for charged excitations in insulating . Physical Review B 42:16, pages 10800-10803.
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Yang‐Fang Chen. (2006) Persistent Photoconductivity in Doping‐Modulated Amorphous Silicon Multilayers. physica status solidi (b) 160:2.
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Hidetoshi Oheda. (1990) Change in the optical‐absorption coefficient induced by optical modulation of the internal electric field in doping‐modulated amorphous silicon multilayers. Journal of Applied Physics 67:10, pages 6476-6480.
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Byueng-Su Yoo, Yoon-Ho Song, Choochon Lee & Jin Jang. (1990) Persistent photoconductivity in compensated amorphous silicon. Physical Review B 41:15, pages 10787-10791.
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A. Ghaith. (1990) Influence of light-induced metastable changes on the electron drift mobility in doping-modulated amorphous silicon. Journal of Non-Crystalline Solids 119:1, pages 75-78.
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A. Hamed & H. Fritzsche. (1989) The origin of persistent photoconductance in doping-modulated and compensated a-Si:H. Journal of Non-Crystalline Solids 114, pages 717-719.
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J. Kakalios. (1989) The origin of persistent photoconductivity in amorphous silicon. Journal of Non-Crystalline Solids 114, pages 714-716.
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Byueng-Su Yoo, Yoon-Ho Song, Choochon Lee & Jin Jang. (1989) Bias-induced metastable transverse conduction in doping-modulated amorphous silicon superlattices. Physical Review B 39:15, pages 11050-11054.
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J. Kakalios. (2011) Metastable Electronic Effects in Amorphous Semiconductor Superlattices. MRS Proceedings 160.
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Jin Jang, Sung Chul Kim & Choochon Lee. (1988) Carrier separation effect in single‐layered‐compensated amorphous silicon. Journal of Applied Physics 64:11, pages 6583-6585.
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Fangqing Zhang, Xixiang Xu, Guosheng Sun, Yafei Zhang & Guanghua Chen. (1988) Optical properties of GD a-Si:H/a-Si1−xCx:H superlattices. Journal of Luminescence 40-41, pages 727-728.
Crossref
H. Fritzsche, S.-H. Yang & J. Takada. (2011) Metastable Non-Equilibrium Conductance States in Doping-Modulated a-Si:H Multilayers. MRS Proceedings 118.
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H. Fritzsche, H. Ugur, J. Takada & S.-H. Yang. 1988. Disorder and Order in the Solid State. Disorder and Order in the Solid State 11 22 .
Suk-Ho Choi, Byueng-Su Yoo, Choochon Lee & Jin Jang. (1987) Doping and annealing effects on persistent photoconductivity in doping-modulated amorphous-silicon superlattices. Physical Review B 36:12, pages 6479-6485.
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J. Kakalios & R. A. Street. 1987. Disordered Semiconductors. Disordered Semiconductors 529 539 .

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