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Philosophical Magazine B Volume 55, 1987 - Issue 6
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Original Articles

The oxidation of silicon by dry oxygen can we distinguish between models?

Joseph Blanc R.C.A. Laboratories, P.O. Box 432, Princeton, New Jersey, 08543-0432, U.S.A.; 12 Willow St., Princeton, New Jersey, 08542, U.S.A.
Pages 685-710 | Received 15 Oct 1986, Accepted 03 Nov 1986, Published online: 20 Aug 2006

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Volker Presser & KlausG. Nickel. (2008) Silica on Silicon Carbide. Critical Reviews in Solid State and Materials Sciences 33:1, pages 1-99.
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Luca Verdi & Antonio Miotello. (1995) New structural features of non-crystalline SiO2 as revealed by the analysis of the transport properties of hydrogen and oxygen. Philosophical Magazine B 71:4, pages 741-750.
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A. Szekeres, K. Christova & A. Paneva. (1992) Stress-induced refractive index variation in dry SiO2 . Philosophical Magazine B 65:5, pages 961-966.
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N.F. Mott, S. Rigo, F. Rochet & A.M. Stoneham. (1989) Oxidation of silicon. Philosophical Magazine B 60:2, pages 189-212.
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Z.H. Lu, E. Sacher & A. Yelon. (1988) Kinetics of the room-temperature air oxidation of hydrogenated amorphous silicon and crystalline silicon. Philosophical Magazine B 58:4, pages 385-388.
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John Robertson. (1987) The growth mechanism of thin oxide films on Si. Philosophical Magazine B 55:6, pages 673-684.
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A. Atkinson. (1987) Growth of NiO and SiO2 thin films. Philosophical Magazine B 55:6, pages 637-650.
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Articles from other publishers (34)

K. Maser. (2019) Varying internal parameters in the thermal silicon oxidation. Journal of Solid State Electrochemistry 23:8, pages 2589-2593.
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A. M. Saad, V. Malyutina-Bronskaya, V. Zalesski & K. Maser. (2016) Revealing two components of oxidant flux for thermal oxidation of silicon contrary to several models. Journal of Materials Science 52:1, pages 437-445.
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D. Y. Tzou. 2014. Macro- to Microscale Heat Transfer. Macro- to Microscale Heat Transfer 327 357 .
Y. Leong Yeow, Jong-Leng Liow & Yee-Kwong Leong. (2014) Obtaining model-independent growth rates from experimental data of dry thermal oxidation of silicon. AIChE Journal 60:5, pages 1810-1820.
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Christophe Dominique Krzeminski. (2013) Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach. Journal of Applied Physics 114:22.
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D. Y. Tzou & Jinliang Xu. 2011. Advances in Transport Phenomena 2010. Advances in Transport Phenomena 2010 93 170 .
G. Gerlach, K. Maser & A. M. Saad. (2009) Activation energy of thermally grown silicon dioxide layers on silicon substrates. physica status solidi (b) 246:10, pages 2242-2247.
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J. Farjas & P. Roura. (2007) Oxidation of silicon: Further tests for the interfacial silicon emission model. Journal of Applied Physics 102:5.
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P. Roura & J. Farjas. (2006) Comment on “Dynamics of thermal growth of silicon oxide films on Si”. Physical Review B 74:12.
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D.-Q Yang, M. Meunier & E. Sacher. (2006) Room temperature air oxidation of nanostructured Si thin films with varying porosities as studied by x-ray photoelectron spectroscopy. Journal of Applied Physics 99:8.
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D.-Q. Yang, Jean-Numa Gillet, M. Meunier & E. Sacher. (2005) Room temperature oxidation kinetics of Si nanoparticles in air, determined by x-ray photoelectron spectroscopy. Journal of Applied Physics 97:2.
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T. Yasuda, N. Kumagai, M. Nishizawa, S. Yamasaki, H. Oheda & K. Yamabe. (2003) Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method. Physical Review B 67:19.
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A.M. Stoneham. 2001. Encyclopedia of Materials: Science and Technology. Encyclopedia of Materials: Science and Technology 6579 6586 .
J K Chen, J E Beraun & D Y Tzou. (2000) A dual-phase-lag diffusion model for predicting thin film growth. Semiconductor Science and Technology 15:3, pages 235-241.
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J. D. Evans & J. R. King. (2000) On the Derivation of Heterogeneous Reaction Kinetics from a Homogeneous Reaction Model. SIAM Journal on Applied Mathematics 60:6, pages 1977-1996.
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D.R Wolters & A.T.A Zegers-van Duijnhoven. (1998) Advanced modeling of silicon oxidation. Microelectronics Reliability 38:2, pages 259-264.
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Hisashi Ohsaki, Yuko Tachibana, Kazuo Kadowaki, Yasuo Hayashi & Koichi Suzuki. (1997) Bendable and temperable solar control glass. Journal of Non-Crystalline Solids 218, pages 223-229.
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A Szekeres & P Danesh. (1996) Mechanical stress in structures formed by thermal oxidation of amorphous and crystalline silicon. Semiconductor Science and Technology 11:8, pages 1225-1230.
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E. P. Gusev, H. C. Lu, T. Gustafsson & E. Garfunkel. (1995) Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering. Physical Review B 52:3, pages 1759-1775.
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Luca Verdi, Antonio Miotello & Roger Kelly. (1994) Oxide growth at a Si surface and role of radiation effects. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 91:1-4, pages 648-653.
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L. Verdi, A. Miotello & R. Kelly. (1994) Oxide growth at a Si surface. Thin Solid Films 241:1-2, pages 383-387.
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Ralph J. Jaccodine. 1993. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 45 54 .
J.R. Engstrom, D.J. Bonser & Thomas Engel. (1992) The reaction of atomic oxygen with Si(100) and Si(111). Surface Science 268:1-3, pages 238-264.
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T. Bekkay, K. Piyakis, Y. Diawara, E. Sacher, A. Yelon & J.F. Currie. (1991) Band bending and Fermi level shifts in phosphorus-doped hydrogenated amorphous silicon studied by X-ray photoelectron spectroscopy. Surface Science 258:1-3, pages 190-196.
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E. A. Taft. (1991) Thin thermal oxides of silicon and the orientation effect: An empirical approach. Journal of Applied Physics 69:6, pages 3733-3738.
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Shou-Chen Kao & Robert H. Doremus. (2011) Comparison of Different Thickness Measurements of Oxide Films on Silicon. MRS Proceedings 238.
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M.H Mintz, P Shuker & J Fine. (1990) Direct detection of atom vaporization by laser resonance ionization as a probe of gas-surface chemisorption mechanisms. Surface Science 238:1-3, pages L473-L477.
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S Alexandrova, A Szekeres & J Koprinarova. (1989) The role of stress on silicon dry oxidation kinetics. Semiconductor Science and Technology 4:10, pages 876-878.
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D.R. Wolters & A.T.A. Zegers-Van Duynhoven. (1989) Kinetics of dry oxidation of silicon. Applied Surface Science 39:1-4, pages 81-88.
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E. Farr?s, J. Su??I. Placencia, N. Barniol & X. Aymerich. (1989) The Thermal Growth of Very Thin SiO2 Films A Diffusion-Controlled Process. Physica Status Solidi (a) 114:1, pages 167-175.
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D. R. Wolters & A. T. A. Zegers-van Duynhoven. (1989) Kinetics of dry oxidation of silicon. II. Conditions affecting the growth. Journal of Applied Physics 65:12, pages 5134-5141.
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D. R. Wolters & A. T. A. Zegers-van Duynhoven. (1989) Kinetics of dry oxidation of silicon. I. Space-charge-limited growth. Journal of Applied Physics 65:12, pages 5126-5133.
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E. Farr?s, J. Su??I. Placencia, N. Barniol & X. Aymerich. (1989) Si?SiO2 interfacial atomic scale roughness caused by inhomogeneous thermal oxidation. Physica Status Solidi (a) 113:1, pages 83-96.
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Bruce E. Deal. 1988. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 5 16 .

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