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Philosophical Magazine B Volume 56, 1987 - Issue 5
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Original Articles

Calculation of localized-state energy distributions from transient-photoresponse data

J. M. Marshall Department of Materials Engineering, University College Swansea, Singleton Park, Swansea, SA2 8PP, Wales
,
J. Berkin Department of Physics, Dundee College of Technology, Bell Street, Dundee, DD1 1HG, Scotland
&
C. Main Department of Physics, Dundee College of Technology, Bell Street, Dundee, DD1 1HG, Scotland
Pages 641-652 | Received 02 Apr 1987, Accepted 05 May 1987, Published online: 20 Aug 2006

Citations (47)

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Read on this site (10)

J.M. Marshall. (2000) The interpretation of pulsed-excitation transient photoconductivity in disordered semiconductors. Philosophical Magazine B 80:9, pages 1705-1726.
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Baojie Yan, GuyJ. Adriaenssens & Astrid Eliat. (1996) Influence of light intensity on hole transport in a-Si: H transient photocurrents. Philosophical Magazine B 73:3, pages 543-554.
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P.A. Bayley & J.M. Marshall. (1996) Transient photoconductivity in a-Si1− C :H thin films. Philosophical Magazine B 73:3, pages 429-444.
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A.K. Browne, J.M. Marshall, D.M. Goldie & A.R. Hepburn. (1994) Transport properties of glow-discharge amorphous silicon grown under different deposition conditions. Philosophical Magazine B 69:2, pages 349-358.
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F. Schauer, M. Nesládek & J. Stuchlík. (1991) Tail-state distribution in the density of states of p-type a-Si:H. Philosophical Magazine Letters 64:5, pages 321-326.
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G.J. Adriaenssens. (1990) Distribution of gap states in a-As2Se3 . Philosophical Magazine B 62:1, pages 79-87.
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C. Longeaud & R. Vanderhaghen. (1990) Determination of the density of states of the conduction-band tail in amorphous materials: Application to a-Si1−xGex:H alloys. Philosophical Magazine B 61:2, pages 277-291.
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C.E. Nebel & G.H. Bauer. (1989) Tail-state distribution and trapping probability in a-Si:H investigated by time-of-flight experiments and computer simulations. Philosophical Magazine B 59:4, pages 463-479.
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G. Seynhaeve, G.J. Adriaenssens, H. Michiel & H. Overhof. (1988) Analysis of time-of-flight transit times based on the multiple-trapping model of charge-carrier transport. Philosophical Magazine B 58:4, pages 421-432.
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J.M. Marshall, R.A. Street, M.J. Thompson & W.B. Jackson. (1988) Hole carrier drift-mobility measurements in a-Si: H, and the shape of the valence-band tail. Philosophical Magazine B 57:3, pages 387-397.
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Articles from other publishers (37)

Hiroyoshi Naito. (2021) Modulation Spectroscopies for the Characterization of Electronic Properties in Organic Semiconductor Devices. Modulation Spectroscopies for the Characterization of Electronic Properties in Organic Semiconductor Devices.
Makoto Takada, Takashi Nagase, Takashi Kobayashi & Hiroyoshi Naito. (2019) 19‐5: Late‐News Paper: Characterization of carrier transport properties in working polymer light‐emitting diodes . SID Symposium Digest of Technical Papers 50:1, pages 263-266.
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Makoto Takada, Takashi Nagase, Takashi Kobayashi & Hiroyoshi Naito. (2019) Full characterization of electronic transport properties in working polymer light-emitting diodes via impedance spectroscopy. Journal of Applied Physics 125:11.
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Jens Lorrmann, Manuel Ruf, David Vocke, Vladimir Dyakonov & Carsten Deibel. (2014) Distribution of charge carrier transport properties in organic semiconductors with Gaussian disorder. Journal of Applied Physics 115:18.
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H. Belgacem & A. Merazga. (2008) Determination of the density of localized states in semiconductors from the pre-recombination transient photoconductivity. Solid-State Electronics 52:1, pages 73-77.
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J. M. Marshall. 2006. Functional Properties of Nanostructured Materials. Functional Properties of Nanostructured Materials 29 44 .
Monica Brinza, Evguenia V. Emelianova & Guy J. Adriaenssens. (2005) Nonexponential distributions of tail states in hydrogenated amorphous silicon. Physical Review B 71:11.
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K. Koughia, Z. Shakoor, S. O. Kasap & J. M. Marshall. (2005) Density of localized electronic states in a-Se from electron time-of-flight photocurrent measurements. Journal of Applied Physics 97:3.
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J. M. Marshall & C. Main. 2005. Nanostructured and Advanced Materials for Applications in Sensor, Optoelectronic and Photovoltaic Technology. Nanostructured and Advanced Materials for Applications in Sensor, Optoelectronic and Photovoltaic Technology 51 76 .
K.V. Koughia, B. Fogal, G. Belev, R.E. Johanson & S.O. Kasap. (2004) Density of states in the mobility gap of stabilized a-Se from electron time-of-flight photocurrent analysis. Journal of Non-Crystalline Solids 338-340, pages 569-573.
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J. M. Marshall. 2002. Photovoltaic and Photoactive Materials — Properties, Technology and Applications. Photovoltaic and Photoactive Materials — Properties, Technology and Applications 49 66 .
S. Grabtchak, C. Main & S. Reynolds. (2000) Interpreting transient photocurrents as a signature of the density of states distribution: the profound importance of the short-time decay. Journal of Non-Crystalline Solids 266-269, pages 362-366.
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H.-Z. Song, G. J. Adriaenssens, E. V. Emelianova & V. I. Arkhipov. (1999) Distribution of gap states in amorphous selenium thin films. Physical Review B 59:16, pages 10607-10613.
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D. P. Webb, C. Main, S. Reynolds, Y. C. Chan, Y. W. Lam & S. K. O’Leary. (1998) Effects of bandwidth limitations on the localized state distribution calculated from transient photoconductivity data. Journal of Applied Physics 83:9, pages 4782-4787.
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Guy J. Adriaenssens. 1997. Amorphous Insulators and Semiconductors. Amorphous Insulators and Semiconductors 437 468 .
P.A. Bayley, J.M. Marshall, C. Main, D.P. Webb, R.A.C.M.M. Van Swaaij & J. Bezemer. (1996) Determination of the density of states in amorphous silicon-carbon alloys using a Fourier transformation of transient photocurrent data. Journal of Non-Crystalline Solids 198-200, pages 161-164.
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O.I. Konkov, E.I. Terukov, I.N. Trapeznikova & V.E. Chelnokov. (1994) A model of density of states in amorphous Si, C and SiC from time-of-flight measurement. Diamond and Related Materials 3:11-12, pages 1356-1359.
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F. Schauer, A. Eliat, M. Nesládek & G. J. Adriaenssens. (1994) Transient space-charge-limited currents: The time-of-flight and post-transit analysis in hydrogenated amorphous silicon. Applied Physics Letters 64:22, pages 3009-3011.
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Christoph E. Nebel & R. A. Street. (2011) Interpretation of High Field Transport in A-Si:H Based on the Effective Temperature Definition. MRS Proceedings 336.
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V.I. Arkhipov. (1993) An adiabatic model of trap-controlled dispersive transport and recombination. Journal of Non-Crystalline Solids 163:3, pages 274-282.
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A. Eliat, J. Jansen, S. Usala & G.J. Adriaenssens. (1993) Time-of-flight and constant-photocurrent measurements in a-Si:S:H alloys. Journal of Non-Crystalline Solids 164-166, pages 1093-1096.
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P.A. Bayley, A.K. Browne, J.M. Marshall, R.A.C.M.M. Van Swaaij & A.R. Hepburn. (1993) Study of the temperature and field dependence of electron drift mobility in α-Si1−χCχ:H using the time-of-flight technique. Journal of Non-Crystalline Solids 164-166, pages 521-524.
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Rudi Brüggemann, Norbert Bernhard, Charles Main & Gottfried H. Bauer. (1993) Numerical Simulation and Experimental Investigation of the Time-Of-Flight Technique Applied to a-Si:H/a-SiGe:H-Heterojunctions. MRS Proceedings 297.
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C. E. Nebel, R. A. Street, N. M. Johnson & J. Kocka. (1992) High-electric-field transport in a -Si:H. I. Transient photoconductivity . Physical Review B 46:11, pages 6789-6802.
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C. Main, R. Brüggemann, D.P. Webb & S. Reynolds. (1992) Determination of gap-state distributions in amorphous semiconductors from transient photocurrents using a fourier transform technique. Solid State Communications 83:6, pages 401-405.
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W. B. Jackson & C. C. Tsai. (1992) Hydrogen transport in amorphous silicon. Physical Review B 45:12, pages 6564-6580.
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O. Gutschker & R. Bindemann. (2006) Relaxation and Recombination of Photoexcited Carriers in a‐Si: H Calculated by Monte‐Carlo Simulations. physica status solidi (b) 170:1, pages 339-351.
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Robert E. Johanson. (1992) Drift mobility of amorphous semiconductors measured by the traveling-wave technique. Physical Review B 45:8, pages 4089-4112.
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Ross Brown & Nikolai A. Efremov. (1991) New Monte Carlo simulations of many-particle stochastic dynamics: Growth of correlations and local self-ordering during annihilation of like particles. Chemical Physics 155:3, pages 357-368.
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S. Usala, G.J. Adriaenssens, Ö. Öktü & M. Nesladek. (1991) Post-transit-time analysis of time-of-flight photocurrents. Applied Surface Science 50:1-4, pages 265-268.
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J.M. Marshall & A.R. Hepburn. (1991) Excess carrier and structural relaxation phenomena in amorphous semiconductor materials and devices. Journal of Non-Crystalline Solids 131-133, pages 1250-1253.
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C. Main, J. Berkin, R. Brüggemann & J.M. Marshall. (1991) Excess carrier dispersion in conventionally dispersive amorphous semiconductors and the mobility-lifetime anomaly in a-Si:H. Journal of Non-Crystalline Solids 137-138, pages 439-442.
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R. Hattori & J. Shirafuji. (1990) Longitudinal electron transport in hydrogenated amorphous silicon/silicon nitride multilayer structures. Applied Physics Letters 56:3, pages 259-261.
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R. Hattori, T. Enomoto & J. Shirafuji. (1989) Time-of-flight measurement of longitudinal electron transport in amorphous semiconductor multilayers. Journal of Non-Crystalline Solids 114, pages 711-713.
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J.M. Marshall, C. Pickup, A. Browne, J. McNeil, C. Hotham, C. Main & J. Berkin. (1989) Band tail states in a-Si:H — influence of preparation conditions and techniques for characterisation. Journal of Non-Crystalline Solids 114, pages 339-341.
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R. Vanderhaghen. (1988) Electron-transport parameters and tail-state distribution in hydrogenated amorphous silicon obtained from position and tail-state matrix simulation of drift experiments. Physical Review B 38:15, pages 10755-10775.
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Finley R. Shapiro & Yaneer Bar-Yam. (1988) Microscopic transient simulation of semiconductors and insulators. Journal of Applied Physics 64:4, pages 2185-2188.
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