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Philosophical Magazine B Volume 56, 1987 - Issue 4
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Original Articles

Experimental determination of the density of gap states in amorphous silicon by Schottky barrier admittance

I. W. Archibald School of Engineering and Applied Science, University of Durham, South Road, Durham, England
&
R. A. Abram School of Engineering and Applied Science, University of Durham, South Road, Durham, England
Pages 429-441 | Received 17 Nov 1986, Accepted 16 Feb 1987, Published online: 20 Aug 2006

Citations (6)

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Read on this site (1)

F. Di Quarto & M. Santamaria. (2004) Semiconductor electrochemistry approach to passivity and passivity breakdown of metals and metallic alloys. Corrosion Engineering, Science and Technology 39:1, pages 71-81.
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Articles from other publishers (5)

F. Di Quarto, F. La Mantia & M. Santamaria. (2007) Recent advances on physico-chemical characterization of passive films by EIS and differential admittance techniques. Corrosion Science 49:1, pages 186-194.
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F. Di Quarto, F. La Mantia & M. Santamaria. (2005) Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies. Electrochimica Acta 50:25-26, pages 5090-5102.
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Xing Chen & Chen-Yu Tai. (1989) Optical-bias-enhanced transient photocurrent in amorphous silicon. Physical Review B 40:14, pages 9652-9660.
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I. Balberg & S. Z. Weisz. (1989) State distribution and ambipolar diffusion length in n -type hydrogenated amorphous silicon . Journal of Applied Physics 66:1, pages 215-218.
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Xing Chen & Chen-Yu Tai. (2011) Optical Bias Enhanced Transient Photoconductivity in a-Si:H. MRS Proceedings 149.
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