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Philosophical Magazine B Volume 57, 1988 - Issue 3
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Original Articles

Hole carrier drift-mobility measurements in a-Si: H, and the shape of the valence-band tail

J. M. Marshall Department of Materials Engineering, University College of Swansea, Singleton Park, Swansea, SA2 8PP, U.K.
,
R. A. Street Xerox Palo Alto Research Centre, Palo Alto, California, 94304, U.S.A.
,
M. J. Thompson Xerox Palo Alto Research Centre, Palo Alto, California, 94304, U.S.A.
&
W. B. Jackson Xerox Palo Alto Research Centre, Palo Alto, California, 94304, U.S.A.
Pages 387-397 | Received 12 Jun 1987, Accepted 29 Jun 1987, Published online: 20 Aug 2006

Citations (40)

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Read on this site (6)

J.M. Marshall. (2000) The interpretation of pulsed-excitation transient photoconductivity in disordered semiconductors. Philosophical Magazine B 80:9, pages 1705-1726.
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P.A. Bayley & J.M. Marshall. (1996) Transient photoconductivity in a-Si1− C :H thin films. Philosophical Magazine B 73:3, pages 429-444.
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J.H. Zhou & S.R. Elliott. (1994) Deep trapping and recombination in hydrogenated amorphous silicon. Philosophical Magazine B 69:2, pages 147-157.
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F. Schauer, M. Nesládek & J. Stuchlík. (1991) Tail-state distribution in the density of states of p-type a-Si:H. Philosophical Magazine Letters 64:5, pages 321-326.
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J. Kočka, C.E. Nebel & C.D. Abel. (1991) Solution of the μτ problem in a-Si: H. Philosophical Magazine B 63:1, pages 221-246.
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K.P. Chik, P.H. Chan, K.H. Tam, B.Y. Tong, S.K. Wong & P.K. John. (1989) Thermoelectric power and electronic transport in thermal-LPCVD amorphous silicon-boron films. Philosophical Magazine B 59:5, pages 543-559.
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Articles from other publishers (34)

F.A. Rubinelli. (2016) Complementary photogating effect in microcrystalline silicon n-i-p structures. Thin Solid Films 619, pages 102-111.
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Francisco A. Rubinelli & Helena Ramirez. (2015) Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling. Journal of Applied Physics 117:10.
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A. Tsormpatzoglou, N. A. Hastas, M. K. Hatalis & C. A. Dimitriadis. (2014) Analytical unified drain current model of amorphous IGZO thin film transistors considering a Gaussian distribution of tail states. Analytical unified drain current model of amorphous IGZO thin film transistors considering a Gaussian distribution of tail states.
A. Tsormpatzoglou, N. A. Hastas, M. K. Hatalis & C. A. Dimitriadis. (2014) Parameter extraction methodology for amorphous IGZO thin film transistors. Parameter extraction methodology for amorphous IGZO thin film transistors.
A. Tsormpatzoglou, N. A. Hastas, N. Choi, F. Mahmoudabadi, M. K. Hatalis & C. A. Dimitriadis. (2013) Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors. Journal of Applied Physics 114:18, pages 184502.
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Ana Kanevce & Wyatt K. Metzger. (2009) The role of amorphous silicon and tunneling in heterojunction with intrinsic thin layer (HIT) solar cells. Journal of Applied Physics 105:9.
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J. M. Marshall. 2006. Functional Properties of Nanostructured Materials. Functional Properties of Nanostructured Materials 29 44 .
Monica Brinza, Evguenia V. Emelianova & Guy J. Adriaenssens. (2005) Nonexponential distributions of tail states in hydrogenated amorphous silicon. Physical Review B 71:11.
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A.O. Kodolbaş, B. Çomak, A. Bacıogˇlu & Ö. Öktü. (2005) Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films. Journal of Non-Crystalline Solids 351:5, pages 426-431.
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J. M. Marshall & C. Main. 2005. Nanostructured and Advanced Materials for Applications in Sensor, Optoelectronic and Photovoltaic Technology. Nanostructured and Advanced Materials for Applications in Sensor, Optoelectronic and Photovoltaic Technology 51 76 .
Gautam Ganguly, Isao Sakata & Akihisa Matsuda. (1996) Time of flight mobility measurements in a-Si:H grown under controlled-energy ion-bombardment. Journal of Non-Crystalline Solids 198-200, pages 300-303.
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F. Wang & R. Schwarz. (1995) Comprehensive numerical simulation of defect density and temperature-dependent transport properties in hydrogenated amorphous silicon. Physical Review B 52:20, pages 14586-14597.
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Qing Gu, Qi Wang, Eric A. Schiff, Yuan-Min Li & Charles T. Malone. (1994) Hole drift mobility measurements in amorphous silicon-carbon alloys. Journal of Applied Physics 76:4, pages 2310-2315.
Crossref
Qing Gu, Qi Wang, E. A. Schiff, Yuañ-Min Li & Charles T. Malone. (2011) Hole Drift Mobility in a-Si 1−x C x :H . MRS Proceedings 336.
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Howard M. Branz, Arthur Yelon & Bijan Movaghar. (2011) Physics of the Meyer-Neldel Rule in Amorphous Silicon. MRS Proceedings 336.
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V.I. Arkhipov. (1993) An adiabatic model of trap-controlled dispersive transport and recombination. Journal of Non-Crystalline Solids 163:3, pages 274-282.
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M. Nesl?dek, F. Schauer, P. Brada, G.J. Adriaenssens & L.M. Stals. (1993) Electric field relaxation in prolonged-time photocurrent experiments. Journal of Non-Crystalline Solids 164-166, pages 505-508.
Crossref
Hidetoshi Oheda. 1993. Current Topics in Amorphous Materials. Current Topics in Amorphous Materials 339 344 .
C. E. Nebel, R. A. Street, N. M. Johnson & J. Kocka. (1992) High-electric-field transport in a -Si:H. I. Transient photoconductivity . Physical Review B 46:11, pages 6789-6802.
Crossref
Homer Antoniadis & E. A. Schiff. (1991) Nonlinear photocarrier drift in hydrogenated amorphous silicon-germanium alloys. Physical Review B 43:17, pages 13957-13966.
Crossref
Hidetoshi Oheda. (1991) Spatial carrier separation evaluated with a relaxation time distribution in doping-modulated amorphous silicon multilayers. Journal of Applied Physics 69:9, pages 6542-6546.
Crossref
Richard S. Crandall & I. Balberg. (1991) Mobility-lifetime products in hydrogenated amorphous silicon. Applied Physics Letters 58:5, pages 508-510.
Crossref
H. Kakinuma, M. Mohri, M. Sakamoto & H. Sawai. (1991) Gap-state density of lightly P- and B-doped a -Si:H deduced from space-charge-limited photocurrents . Physical Review B 43:6, pages 4871-4878.
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C. E. Nebel & J. Kocka. (2011) Electron Transport in a-Si:H at Low Temperatures. MRS Proceedings 219.
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J.M. Marshall, W. Pickin, A.R. Hepburn, C. Main & R. Brüggemann. (1991) Evaluation of the constant photocurrent method for determining the energy distribution of localised states in disordered semiconductors. Journal of Non-Crystalline Solids 137-138, pages 343-346.
Crossref
Yang‐Fang Chen. (2006) Persistent Photoconductivity in Doping‐Modulated Amorphous Silicon Multilayers. physica status solidi (b) 160:2.
Crossref
R.S. Crandall & H.M. Branz. (1990) Band bending due to charged dangling bonds in amorphous silicon p-i-n solar cells. Band bending due to charged dangling bonds in amorphous silicon p-i-n solar cells.
H. Kakinuma, M. Mouri, M. Sakamoto & H. Sawai. (1990) Density-of-states determination of amorphous silicon from space-charge-limited photocurrents. Journal of Applied Physics 67:1, pages 558-560.
Crossref
C.E Nebel & G.H Bauer. (1989) Deep valence-band trap defect conversion by light soaking of a-Si:H. Journal of Non-Crystalline Solids 114, pages 600-602.
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Howard M. Branz & Richard S. Crandall. (1989) Defect equilibrium thermodynamics in hydrogenated amorphous silicon: Consequences for solar cells. Solar Cells 27:1-4, pages 159-168.
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G. F. Seynhaeve, R. P. Barclay, G. J. Adriaenssens & J. M. Marshall. (1989) Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous silicon. Physical Review B 39:14, pages 10196-10205.
Crossref
M.J. Powell. (1989) The physics of amorphous-silicon thin-film transistors. IEEE Transactions on Electron Devices 36:12, pages 2753-2763.
Crossref
Harald Overhof & Peter ThomasHarald Overhof & Peter Thomas. 1989. Electronic Transport in Hydrogenated Amorphous Semiconductors. Electronic Transport in Hydrogenated Amorphous Semiconductors 39 61 .
W. B. Jackson. (1988) Connection between the Meyer-Neldel relation and multiple-trapping transport. Physical Review B 38:5, pages 3595-3598.
Crossref

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