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Philosophical Magazine B Volume 57, 1988 - Issue 5
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Original Articles

Recombination at dangling bonds and band tails: Temperature dependence of photoconductivity in hydrogenated amorphous silicon

F. Vaillant Laboratoire d'Etudes des Propriétés Electroniques des Solides (associé au Université Scientifique, Technologique et Médicale de Grenoble), Centre National de la Recherche Scientifique, B.P. 166, 38042, Grenoble, Cédex, France
,
D. Jousse Laboratoire d'Etudes des Propriétés Electroniques des Solides (associé au Université Scientifique, Technologique et Médicale de Grenoble), Centre National de la Recherche Scientifique, B.P. 166, 38042, Grenoble, Cédex, France
&
J.-C. Bruyere Laboratoire d'Etudes des Propriétés Electroniques des Solides (associé au Université Scientifique, Technologique et Médicale de Grenoble), Centre National de la Recherche Scientifique, B.P. 166, 38042, Grenoble, Cédex, France
Pages 649-661 | Received 29 May 1987, Accepted 15 Sep 1987, Published online: 20 Aug 2006

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M. Pomoni & P. Kounavis. (2014) Determination of trapping–detrapping events, recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon. Philosophical Magazine 94:21, pages 2447-2471.
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F. Gaspari, T. Kosteski, S. Zukotynski, N.P. Kherani & W.T. Shmayda. (2000) Time evolution of the density of states of tritiated hydrogenated amorphous silicon. Philosophical Magazine B 80:4, pages 561-569.
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MinhQ. Tran. (1995) On thermal quenching of the photoconductivity in hydrogenated amorphous silicon. Philosophical Magazine B 72:1, pages 35-66.
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Hong Wang, Xuanying Lin, Kuixun Lin, Meifang Zhu & Dejuan Zheng. (1994) Calculation of electronic potential energy distributions and photoconductivity in hydrogenated amorphous silicon/hydrogenated amorphous silicon nitride superlattices. Philosophical Magazine B 70:2, pages 253-261.
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J.Z. Liu. (1992) The role of the quasi-Fermi energy in steady-state recombination in hydrogenated amorphous silicon. Philosophical Magazine Letters 66:2, pages 85-89.
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T. Smaïl & T. Mohammed-Brahim. (1991) Temperature dependence of steady-state photoconductivity in hydrogenated amorphous silicon. Philosophical Magazine B 64:6, pages 675-688.
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E. Morgado. (1991) Recombination at correlated dangling bonds and the effects of Fermi level position on steady-state photoconductwiry in amorphous silicon. Philosophical Magazine B 63:2, pages 529-542.
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J. Kočka, C.E. Nebel & C.D. Abel. (1991) Solution of the μτ problem in a-Si: H. Philosophical Magazine B 63:1, pages 221-246.
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Articles from other publishers (24)

Azuma Suzuki. (2021) Simulation of hydrogenated amorphous silicon: temperature dependence of nonequilibrium distribution functions for trap states. Journal of Computational Electronics 20:4, pages 1471-1483.
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Sanjay K. Ram, Satyendra Kumar & P. Roca i Cabarrocas. (2007) Numerical modeling of steady state photoconductivity process in highly crystallized undoped μc-Si:H films. Thin Solid Films 515:19, pages 7576-7580.
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Sanjay K. Ram, Satyendra Kumar, R. Vanderhaghen, B. Drevillon & P. Rocca i Cabarrocas. (2006) Recombination traffic in highly crystallized undoped microcrystalline Si films studied by steady state photoconductivity. Thin Solid Films 511-512, pages 556-561.
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A Merazga, S Tobbeche, C Main, A Al-Shahrani & S Reynolds. (2006) Numerical simulation of the steady state photoconductivity in hydrogenated amorphous silicon including localized state electron hopping. Journal of Physics: Condensed Matter 18:15, pages 3721-3734.
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S.V. Kuznetsov. (2003) Independence of photoconductivity of p-type a-Si:H films on doping level and defect concentration. Journal of Non-Crystalline Solids 316:2-3, pages 217-227.
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Pietro P. Altermatt & Gernot Heiser. (2002) Predicted electronic properties of polycrystalline silicon from three-dimensional device modeling combined with defect-pool model. Journal of Applied Physics 92:5, pages 2561-2574.
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S. V. Kuznetsov. (2001) Numerical calculation of the temperature dependences of photoconductivity in the p-type a-Si:H. Semiconductors 35:10, pages 1191-1196.
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I. Balberg, R. Naidis, L. F. Fonseca, S. Z. Weisz, J. P. Conde, P. Alpuim & V. Chu. (2001) Sensitization of the electron lifetime in a -Si:H: The story of oxygen . Physical Review B 63:11.
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S.V. Kuznetsov. (2001) New feature of the photoconductivity in p-type a-Si:H: independence of photoconductivity of p-type a-Si:H films on doping level and defect concentration. Thin Solid Films 383:1-2, pages 261-263.
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Sukti Hazra, A R Middya & Swati Ray. (1997) Reduction of light-induced metastable changes in a-SiGe:H prepared by using helium dilution: comparison of metastability of helium- and hydrogen-diluted a-SiGe:H alloys. Journal of Physics D: Applied Physics 30:3, pages 325-329.
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E. Morgado, M. Rebelo da Silva & R. T. Henriques. (2011) Light-Soaking Effects on Photoconductivity in a-Si:H Thin Films. MRS Proceedings 467.
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A. Akkaya & G. Aktaş. (1995) The effect of light-soaking on the dc conductivity of a-Si:H. Materials Letters 22:5-6, pages 271-274.
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I. Balberg. (1994) The two carriers’ mobility-lifetime products and their light intensity dependencies in hydrogenated amorphous silicon. Journal of Applied Physics 75:2, pages 914-923.
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Xuanying Lin, Hong Wang, Kuixun Lin, Yunpeng Yu & Shiliu Fu. (1994) Light-induced changes in the photoconductivity of rapidly-deposited hydrogenated amorphous silicon films. Thin Solid Films 237:1-2, pages 310-313.
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A. E. Belal, A. Abd El‐Mongy & N. El Dosoky. (2006) Frequency resolved photoconductivity of bulk CdS single crystals. Crystal Research and Technology 29:8, pages 1103-1108.
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C. Longeaud & J. P. Kleider. (1993) Trapping and recombination via dangling bonds in amorphous and glassy semiconductors under steady-state conditions: Application to the modulated photocurrent experiment. Physical Review B 48:12, pages 8715-8741.
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J.-H. Zhou & S. R. Elliott. (1993) Tunneling recombination and the photoconductivity of amorphous silicon in the temperature region around 100 K. Physical Review B 48:3, pages 1505-1511.
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A. Abd El-Mongy. (1993) The Density of Gap States in a-Si: H. Physica Status Solidi (a) 136:1, pages 113-117.
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D. Fischer, N. Pellaton, H. Keppner, A. Shah & C. M. Fortmann. (2011) Effects of Low Level Graded I-Layer Doping on the Stability of A-SI:H Solar Cells. MRS Proceedings 258.
Crossref
J. Z. Liu. (2011) Quasi-Fermi Energy and Steady-State Recombination Demarcation Level in a-Si:H. MRS Proceedings 258.
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H. Fritzsche, B.-G. Yoon, D.-Z. Chi & M.Q. Tran. (1992) Some observations on the photoconductivity of amorphous semiconductors. Journal of Non-Crystalline Solids 141, pages 123-132.
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B. Cleve & P. Thomas. (2011) The Influence of Tunneling Transitions on Recombination and Photoconductivity of a-Si:H. MRS Proceedings 192.
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Richard H. Bube & David Redfield. (1989) Variation of photoconductivity with doping and optical degradation in hydrogenated amorphous silicon. Journal of Applied Physics 66:7, pages 3074-3081.
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J. Sopka, U. Schneider, B. Schroder, M. Favre, F. Finger & H. Oechsner. (1989) The influence of the film-substrate interface on the defect density and other properties of sputter-deposited amorphous hydrogenated silicon. IEEE Transactions on Electron Devices 36:12, pages 2848-2852.
Crossref

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