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Philosophical Magazine B Volume 58, 1988 - Issue 4
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Original Articles

The conduction band in non-crystalline semiconductors

N. F. Mott Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 OHE
Pages 369-384 | Received 28 Feb 1988, Accepted 17 Apr 1988, Published online: 20 Aug 2006

Citations (28)

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T. Drüsedau, A. Annen, H. Freistedt, B. Schrouml;der & H. Oechsner. (1992) Compensational boron doping and the determination of the mobility gap of hydrogenated amorphous Ge. Philosophical Magazine Letters 66:4, pages 175-179.
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N.F. Mott & M. Kaveh. (1990) Quantum interference in liquid metals. Philosophical Magazine B 61:2, pages 147-154.
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Bernhard Kramer. (1989) Transport at the mobility edge in amorphous semiconductors. The importance of mesoscopic fluctuations. Philosophical Magazine Letters 60:2, pages 73-78.
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Articles from other publishers (25)

John Robertson. (2016) Mott lecture: How bonding concepts can help understand amorphous semiconductor behavior. physica status solidi (a) 213:7, pages 1641-1652.
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Toshiaki FUJITA, Hiroshi TANAKA, Hitoshi INABA & Noriaki NAGATOMO. (2016) Development and electrical properties of wurtzite (Al,Ti)N materials for thin film thermistors. Journal of the Ceramic Society of Japan 124:6, pages 653-658.
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Rodrigo Noriega & Alberto Salleo. 2012. Organic Electronics II. Organic Electronics II 67 104 .
Chen Li, Miaoyin Liu, Neil G. Pschirer, Martin Baumgarten & Klaus Müllen. (2010) Polyphenylene-Based Materials for Organic Photovoltaics. Chemical Reviews 110:11, pages 6817-6855.
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John Robertson. (2008) Physics of amorphous conducting oxides. Journal of Non-Crystalline Solids 354:19-25, pages 2791-2795.
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John Robertson. (2008) Disorder, band offsets and dopability of transparent conducting oxides. Thin Solid Films 516:7, pages 1419-1425.
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P. Ganguly. (2004) Metallization and metallicity: Universal conductivity limits. Current Opinion in Solid State and Materials Science 8:6, pages 385-395.
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Thorsten Koslowski. (1999) Localized and extended electronic eigenstates in proteins: A tight-binding approach. The Journal of Chemical Physics 110:24, pages 12233-12239.
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A. Schroeder, R. Pelster, V. Grunow, W. Lennartz, G. Nimtz & K. Friederich. (1996) Charge transport in silicon carbide: Atomic and microscopic effects. Journal of Applied Physics 80:4, pages 2260-2268.
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D. Comedi, F. Fajardo & I. Chambouleyron. (1995) Properties of gallium-doped hydrogenated amorphous germanium. Physical Review B 52:7, pages 4974-4985.
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Y. Katayama, D. C. Tsui & M. Shayegan. (1994) Experimental study of ( T ) for quasiparticle charge determination in the fractional quantum Hall effect . Physical Review B 49:11, pages 7400-7407.
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T. DrÜsedau, A. Annen & B. SchrÖder. (1993) Doping and Alloying of Hydrogenated Amorphous Germanium Films Prepared by DC-Magnetron Sputtering. MRS Proceedings 297.
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J. Wen & J. Kakalios. (2011) Tunneling Spectroscopy of Amorphous Semiconductors. MRS Proceedings 258.
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P.M. Fauchet, R. Vanderhaghen, A. Mourchid & D. Hulin. (2011) The Extended State Mobility in Amorphous Silicon Alloys. MRS Proceedings 258.
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Y. B. Band, H. U. Baranger & Y. Avishai. (1992) Relationship between resistance, localization length, and inelastic-scattering length. Physical Review B 45:3, pages 1488-1491.
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A. Brezini & N. Zekri. (1991) Metal-non-metal transitions in doped semiconductors. Physics Letters A 161:3, pages 301-313.
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A. Brezini & N. Zekri. (2006) Metal–Non‐Metal Transitions in Doped Si and Ge. physica status solidi (b) 167:1.
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Cronin B. Vining. (1991) A model for the high-temperature transport properties of heavily doped n -type silicon-germanium alloys . Journal of Applied Physics 69:1, pages 331-341.
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T. F. Rosenbaum, S. Pepke, R. N. Bhatt & T. V. Ramakrishnan. (1990) Electronic states in a disordered metal: Magnetotransport in doped germanium. Physical Review B 42:17, pages 11214-11217.
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I. H. Campbell, P. M. Fauchet, S. A. Lyon & R. J. Nemanich. (1990) Photoluminescence above the Tauc gap in a -Si:H . Physical Review B 41:14, pages 9871-9879.
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J. Kakalios. (1989) A physical interpretation of the Hall effect in amorphous semiconductors. Journal of Non-Crystalline Solids 114, pages 372-374.
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R Meaudre, P Jensen, M Meaudre & C Godet. (1989) The preexponential factor of the electrical conductivity of undoped amorphous silicon. Journal of Non-Crystalline Solids 114, pages 360-362.
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Bernhard Kramer & Michael Schreiber. (1989) Mesoscopic effects in the conductivity of amorphous semiconductors. Journal of Non-Crystalline Solids 114, pages 330-332.
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R.A. Street. (1989) Thermal equilibrium electronic properties of a-Si:H. IEEE Transactions on Electron Devices 36:12, pages 2770-2774.
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N.F. Mott. (1989) Doped antiferromagnetic insulators : a model for high temperature superconductivity. Journal de Physique 50:18, pages 2811-2822.
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