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Original Articles

Kinetics of the room-temperature air oxidation of hydrogenated amorphous silicon and crystalline silicon

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Pages 385-388 | Received 20 Nov 1987, Accepted 28 Jan 1988, Published online: 20 Aug 2006

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A. Domingue, K. Piyakis, E. Sacher, M. Di Renzo, S. Dénommée & T.H. Ellis. (1993) The Structure of the Irreversibly Bound Adhesion Promoter-Substrate Interfacial Layer of γ-Aminopropylsilanetriol on Crystalline Si, as Measured by XPS and FTIR. The Journal of Adhesion 40:2-4, pages 151-162.
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Articles from other publishers (23)

Feiyu Xu, Brandon Wagner, Pankaj Ghildiyal, Lorenzo Mangolini & Michael R. Zachariah. (2023) Low temperature oxidation of amorphous silicon nanoparticles. Physical Review Materials 7:4.
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Christopher L. Muhlstein & Robert O. Ritchie. 2023. Comprehensive Structural Integrity. Comprehensive Structural Integrity 311 330 .
Miguel Vazquez-Pufleau. (2020) A Simple Model for the High Temperature Oxidation Kinetics of Silicon Nanoparticle Aggregates. Silicon 13:1, pages 189-200.
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Bruno Alessi, Manuel Macias-Montero, Chiranjeevi Maddi, Paul Maguire, Vladimir Svrcek & Davide Mariotti. (2020) Bridging energy bands to the crystalline and amorphous states of Si QDs. Faraday Discussions 222, pages 390-404.
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Huashan Li, Mark T. Lusk, Reuben T. Collins & Zhigang Wu. (2012) Optimal Size Regime for Oxidation-Resistant Silicon Quantum Dots. ACS Nano 6:11, pages 9690-9699.
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D.-Q Yang, M. Meunier & E. Sacher. (2006) Room temperature air oxidation of nanostructured Si thin films with varying porosities as studied by x-ray photoelectron spectroscopy. Journal of Applied Physics 99:8.
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D.-Q. Yang, Jean-Numa Gillet, M. Meunier & E. Sacher. (2005) Room temperature oxidation kinetics of Si nanoparticles in air, determined by x-ray photoelectron spectroscopy. Journal of Applied Physics 97:2.
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C.L. Muhlstein & R.O. Ritchie. 2003. Comprehensive Structural Integrity. Comprehensive Structural Integrity 467 487 .
C.L Muhlstein, E.A Stach & R.O Ritchie. (2002) A reaction-layer mechanism for the delayed failure of micron-scale polycrystalline silicon structural films subjected to high-cycle fatigue loading. Acta Materialia 50:14, pages 3579-3595.
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Shuran Sheng, Edward Sacher, Arthur Yelon, Howard M. Branz & Denis P. Masson. (2011) Structural Changes in a-Si:H Studied by X-Ray Photoemission Spectroscopy. MRS Proceedings 557.
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Denis P. Masson, Abdelhak Ouhlal & Arthur Yelon. (1995) Long-range structural relaxation in the Staebler-Wronski effect. Journal of Non-Crystalline Solids 190:1-2, pages 151-156.
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Katsuhiko Mutoh, Shigeru Takeyama, Yuka Yamada & Takeo Miyata. (1994) In-situ Auger electron spectroscopy of silicon thin films fabricated using ArF excimer laser-induced chemical vapor deposition and the oxidation process. Applied Surface Science 79-80, pages 459-464.
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T. Bekkay, E. Sacher & A. Yelon. (1992) Ultraviolet photoelectron spectroscopic study of the surface etching of air-oxidized hydrogenated amorphous silicon by aqueous hydrofluoric acid solution. Applied Surface Science 59:3-4, pages 239-243.
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T. Bekkay, K. Piyakis, Y. Diawara, E. Sacher, A. Yelon & J.F. Currie. (1991) Band bending and Fermi level shifts in phosphorus-doped hydrogenated amorphous silicon studied by X-ray photoelectron spectroscopy. Surface Science 258:1-3, pages 190-196.
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B. Lamontagne, E. Sacher & M.R. Wertheimer. (1991) Silicon-carbon reaction provoked by the sputter cleaning of lightly contaminated crystalline silicon. Applied Surface Science 52:1-2, pages 71-76.
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E. Sacher & A. Yelon. (1991) Comment on ‘‘Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation’’. Physical Review Letters 66:12, pages 1647-1647.
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Tun-Wen Pi, A.-B. Yang, C. G. Olson & D. W. Lynch. (1990) Photoemission study of Au on a -Si:H . Physical Review B 42:15, pages 9566-9574.
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Z. H. Lu, S. Poulin-Dandurand, E. Sacher & A. Yelon. (1990) Ga configurations in hydrogenated amorphous silicon as studied by x-ray photoemission spectroscopy. Physical Review B 42:8, pages 5186-5190.
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T. Bekkay, R. Izquierdo, M. St-Denis, E. Sacher & A. Yelon. (1989) The presence of silane gas in plasma-deposited hydrogenated amorphous silicon. Surface Science Letters 222:2-3, pages L831-L836.
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T. Bekkay, R. Izquierdo, M. St-Denis, E. Sacher & A. Yelon. (1989) The presence of silane gas in plasma-deposited hydrogenated amorphous silicon. Surface Science 222:2-3, pages L831-L836.
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T. Bekkay, E. Sacher & A. Yelon. (1989) Surface reaction during the argon ion sputter cleaning of surface oxidized crystalline silicon (111). Surface Science Letters 217:1-2, pages L377-L381.
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T. Bekkay, E. Sacher & A. Yelon. (1989) Surface reaction during the argon ion sputter cleaning of surface oxidized crystalline silicon (111). Surface Science 217:1-2, pages L377-L381.
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A. M. Okoniewski & A. Yelon. (1988) Investigation of intrinsic crystalline Si(111) and amorphous silicon surfaces in air with STM. Journal of Microscopy 152:2, pages 481-486.
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