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Philosophical Magazine B Volume 58, 1988 - Issue 4
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Original Articles

Gap-state distribution in a-Si:H by modulated photocurrent: Shallow-state-deep-state conversion and temperature shift of the electron-transport path

G. Schumm Institut für physikalische Elektronik, Universität Stuttgart Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R., Germany
,
K. Nitsch Institut für physikalische Elektronik, Universität Stuttgart Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R., Germany; Instytut Technologii Elektronowej, Politechniki Wroclawskiej, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland
&
G. H. Bauer Institut für physikalische Elektronik, Universität Stuttgart Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R., Germany
Pages 411-420 | Received 15 Dec 1987, Accepted 21 Apr 1988, Published online: 20 Aug 2006

Citations (19)

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M. Pomoni, A. Giannopoulou & P. Kounavis. (2010) The role of the recombination centers on the modulated photocurrent: Determination of the gap state parameters of semiconductors. Philosophical Magazine 90:25, pages 3441-3461.
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J. Bullot, P. Cordier & M. Gauthier. (1993) Photoconductivity in hydrogenated amorphous silicon. I. Thermal emission and hopping of trapped charges. Philosophical Magazine B 67:6, pages 751-762.
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R. Brüuggemann, C. Main, J. Berkin & S. Reynolds. (1990) An evaluation of phase-shift analysis of modulated photocurrents. Philosophical Magazine B 62:1, pages 29-45.
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T.J. McMahon & RichardS. Crandall. (1990) Safe hole traps—a source of metastable light-induced dangling bonds in a-Si:H. Philosophical Magazine B 61:3, pages 425-435.
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W. Grevendonk, M. Verluyten, J. Dauwen, G.J. Adriaenssens & J. Bezemer. (1990) Optical modulation spectroscopy of dangling bonds in a-Si: H. Philosophical Magazine B 61:3, pages 393-402.
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Articles from other publishers (14)

T. Agostinelli, M. Caironi, D. Natali, M. Sampietro, M. Arca, F.A. Devillanova & V. Ferrero. (2007) Trapping effects on the frequency response of dithiolene-based planar photodetectors. Synthetic Metals 157:22-23, pages 984-987.
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P. Kounavis. (2005) Light-induced changes in the gap states above midgap of hydrogenated amorphous silicon. Journal of Applied Physics 97:2, pages 023707.
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E. Morgado. (2004) Influence of light-soaking and annealing on electron and hole mobility–lifetime products in a-Si:H. Journal of Non-Crystalline Solids 338-340, pages 386-389.
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Stephan Heck & Howard M. Branz. (2001) Fingerprints of two distinct defects causing light-induced photoconductivity degradation in hydrogenated amorphous silicon. Applied Physics Letters 79:19, pages 3080-3082.
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P. Kounavis. (2001) Analysis of the modulated photocurrent experiment. Physical Review B 64:4.
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Stephan Heck & Howard M. Branz. (2011) New experiments on the relationship between light-induced defects and photoconductivity degradation. MRS Proceedings 664.
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P Grygiel & W Tomaszewicz. (2000) Modulated photocurrents in a sandwich-cell structure. Journal of Physics: Condensed Matter 12:24, pages 5209-5223.
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Baojie Yan, Daxing Han & Guy J. Adriaenssens. (1996) Analysis of post-transit photocurrents and electroluminescence spectra from a -Si:H solar cells . Journal of Applied Physics 79:7, pages 3597-3602.
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Baojie Yan & Guy J. Adriaenssens. (1995) Electron emission from deep states and evaluation of the density of states in a-Si:H. Journal of Applied Physics 77:11, pages 5661-5668.
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G. Amato, F. Giorgis, F. Fizzotti & C. Manfredotti. (1993) Depth profiling of defects in a-Si:H films by means of modulated photocurrent. Solid State Communications 86:5, pages 277-280.
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C. Longeaud & J. P. Kleider. (1992) General analysis of the modulated-photocurrent experiment including the contributions of holes and electrons. Physical Review B 45:20, pages 11672-11684.
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J.P. Kleider, C. Longeaud & O. Glodt. (1991) Study of the density of states of hydrogenated amorphous silicon from time-of-flight and modulated photocurrent experiments. Journal of Non-Crystalline Solids 137-138, pages 447-450.
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G. Schumm & G. H. Bauer. (1989) Spatially resolved and energy-resolved defect kinetics in a -Si:H: A comprehensive study by phase-shift analysis of modulated photocurrents . Physical Review B 39:8, pages 5311-5326.
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G. Schumm & G. H. Bauer. (2011) Defect Distribution and Defect Kinetics in Undoped and Boron-Doped A-Si:H Investigated by Modulated Photocurrents. MRS Proceedings 149.
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