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Philosophical Magazine B Volume 60, 1989 - Issue 5
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Original Articles

Measurement of gap states in undoped a-SiGe: H alloys by modulated photocurrent spectroscopy

Yasuo Tsutsumi Electrical Engineering, Akashi Technological College, Akashi, Hyogo, 674, Japan
,
Hiroaki Okamoto Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
&
Yoshihiro Hamakawa Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
Pages 695-712 | Received 12 Oct 1988, Accepted 25 Jan 1989, Published online: 20 Aug 2006

Citations (4)

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Read on this site (1)

Xixiang Xu & Tatsuo Shimizu. (1990) Relation between thermal equilibrium temperature and bandgap in undoped hydrogenated amorphous silicon-based alloys. Philosophical Magazine Letters 62:2, pages 119-123.
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Articles from other publishers (3)

Qi Long, Steluta Dinca, Eric A. Schiff, Baojie Yan, Jeff Yang & Subhendu Guha. (2011) Electron emission from deep traps in hydrogenated amorphous silicon and silicon-germanium: Meyer-Neldel behavior and ionization entropy. MRS Proceedings 1321.
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M. Meaudre, M. E. Gueunier-Farret, R. Meaudre, J. P. Kleider, S. Vignoli & B. Canut. (2005) Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films. Journal of Applied Physics 98:3.
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R. Meaudre, M. Meaudre & J. Chanel. (1991) Temperature dependence of the dc conductivity of undoped a - :H alloys: Influence of metastability . Physical Review B 43:12, pages 9792-9798.
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