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Philosophical Magazine B Volume 60, 1989 - Issue 2
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Original Articles

Oxidation of silicon

N. F. Mott Cavendish Laboratory, Madingley Road, Cambridge, CB3 OHE, U.K
,
S. Rigo Groupe de Physique des Solides de I'École Normale Supérieure, Université de Paris VII, Tour 23, 2 Place Jussieu, 75251, Paris, Cedex, 05, France
,
F. Rochet Groupe de Physique des Solides de I'École Normale Supérieure, Université de Paris VII, Tour 23, 2 Place Jussieu, 75251, Paris, Cedex, 05, France
&
A. M. Stoneham Theoretical Physics Division Harwell Laboratory, Didcot Oxon OX 11 ORA, U.K
Pages 189-212 | Received 17 Nov 1988, Accepted 21 Nov 1988, Published online: 28 Jun 2007

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F. FANG, M.J. HA, X.Y. QIU & J.M. LIU. (2005) AN INTERFACE KINETICS STUDY OF OXIDATION PROCESS OF SILICON. Integrated Ferroelectrics 74:1, pages 31-43.
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Luca Verdi & Antonio Miotello. (1995) New structural features of non-crystalline SiO2 as revealed by the analysis of the transport properties of hydrogen and oxygen. Philosophical Magazine B 71:4, pages 741-750.
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A. Szekeres, K. Christova & P. Danesh. (1993) Oxidation of a-Si:H Stress behaviour in the grown oxide. Philosophical Magazine B 68:1, pages 29-37.
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R. Jones, S. Oberg, M.I. Heggie & P. Tole. (1992) Ab initio calculation of the structure of molecular water in quartz. Philosophical Magazine Letters 66:2, pages 61-66.
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A. Szekeres, K. Christova & A. Paneva. (1992) Stress-induced refractive index variation in dry SiO2 . Philosophical Magazine B 65:5, pages 961-966.
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M.I. Heggie, R. Jones, C.D. Latham, S.C. P. Maynard & P. Tole. (1992) Molecular diffusion of oxygen and water in crystalline and amorphous silica. Philosophical Magazine B 65:3, pages 463-471.
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P.M. Ajayan, T. Ichihashi & S. Iijima. (1991) Electron irradiation damage and sputtering from oxidized silicon particles supported on amorphous carbon. Radiation Effects and Defects in Solids 118:3, pages 281-286.
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S.L. Zhang & F.M. D'Heurle. (1991) A note on the linear-parabolic law of phase formation. Philosophical Magazine A 64:3, pages 619-627.
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M.P. Murrell, C.J. Sofield & S. Sugden. (1991) Silicon transport during oxidation. Philosophical Magazine B 63:6, pages 1277-1287.
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F.M. Ross & W.M. Stobbs. (1991) A study of the initial stages of the oxidation of silicon using the Fresnel method. Philosophical Magazine A 63:1, pages 1-36.
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