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Philosophical Magazine B Volume 60, 1989 - Issue 2
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Original Articles

Static versus electron-phonon disorder in amorphous Si: H and its alloys

T. M. Searle Department of Physics, The University of Sheffield, Sheffield, S3 7RH, England
&
W. A. Jackson Department of Physics, The University of Sheffield, Sheffield, S3 7RH, England
Pages 237-255 | Received 15 Sep 1988, Accepted 08 Nov 1988, Published online: 28 Jun 2007

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M. Anutgan, T. Anutgan, I. Atilgan & B. Katircioglu. (2013) Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode. Philosophical Magazine 93:24, pages 3332-3352.
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R. Einhard Carius. (2000) Optical gap and photoluminescence properties of amorphous silicon alloys. Philosophical Magazine B 80:4, pages 741-753.
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S.R. P. Silvaf, J. Robertson, Rusli, G.A. J. Amaratunga & J. Schwan. (1996) Structure and luminescence properties of an amorphous hydrogenated carbon. Philosophical Magazine B 74:4, pages 369-386.
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C. Godet. (1994) Collective phonon interaction and annealing of metastable defects in amorphous semiconductors. Philosophical Magazine B 70:4, pages 1003-1015.
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J. Robertson. (1994) Defects and hydrogen in amorphous silicon nitride. Philosophical Magazine B 69:2, pages 307-326.
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J. Robertson. (1991) Electronic structure of silicon nitride. Philosophical Magazine B 63:1, pages 47-77.
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Articles from other publishers (40)

Nikolas J. Podraza, David B. Saint John, Maxwell M. Junda & Robert W. Collins. (2021) Mean Free Path of Photoelectronic Excitations in Hydrogenated Amorphous Silicon and Silicon Germanium Alloy Semiconductors. physica status solidi (b) 258:9, pages 2000473.
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Christina Kaiser, Oskar J. Sandberg, Nasim Zarrabi, Wei Li, Paul Meredith & Ardalan Armin. (2021) A universal Urbach rule for disordered organic semiconductors. Nature Communications 12:1.
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Giácomo B.F. Bosco, Zahra Khatami, Jacek Wojcik, Peter Mascher & Leandro R. Tessler. (2018) Excitation mechanism of Tb3+ in a-Si3N4:H under sub-gap excitation. Journal of Luminescence 202, pages 327-331.
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İbrahim Güneş & Kıvanç Sel. (2017) Effects of carbon content and plasma power on room temperature photoluminescence characteristics of hydrogenated amorphous silicon carbide thin films deposited by PECVD. Thin Solid Films 636, pages 85-92.
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Janusz Jaglarz, Maria Jurzecka-Szymacha, Katarzyna Tkacz-Śmiech & Bouchta Sahraoui. (2015) Optical characteristics of a-Si:H layers deposited by PACVD at various temperatures. Optical Materials 39, pages 26-33.
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Arif Khan, Saeed Ganji & S. Noor Mohammad. 2013. Toward Quantum FinFET. Toward Quantum FinFET 25 53 .
Kıvanç Sel & İbrahim Güneş. (2012) Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films. Thin Solid Films 520:24, pages 7062-7065.
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S Noor Mohammad. (2012) Quantum-confined nanowires as vehicles for enhanced electrical transport. Nanotechnology 23:28, pages 285707.
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Mustafa Anutgan, Tamila Anutgan, Ismail Atilgan & Bayram Katircioglu. (2011) Electroforming of Amorphous Silicon Nitride Heterojunction $pin$ Visible Light Emitter. IEEE Transactions on Electron Devices 58:8, pages 2537-2543.
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Mustafa Anutgan, Tamila (Aliyeva) Anutgan, Ismail Atilgan & Bayram Katircioglu. (2011) Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films. Journal of Luminescence 131:7, pages 1305-1311.
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T. A. Anutgan, M. Anutgan, I. Atilgan & B. Katircioglu. (2011) Bright Visible Light Extraction from Amorphous Silicon Nitride Heterojunction Pin Diode. Electrochemical and Solid-State Letters 14:8, pages H330.
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H. L. Hao, L. K. Wu, W. Z. Shen & H. F. W. Dekkers. (2007) Origin of visible luminescence in hydrogenated amorphous silicon nitride. Applied Physics Letters 91:20.
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S. Kobayashi, N. Ohrui, Y. C. Chao, T. Aoki, H. Kobayashi & T. Asakawa. (2007) Deposition of luminescent a-SiN x :H Films with SiH4–N2 gas mixture by VHF–PECVD using novel impedance matching method. Journal of Materials Science: Materials in Electronics 18:S1, pages 29-32.
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M. Molinari, H. Rinnert & M. Vergnat. (2007) Evolution with the annealing treatments of the photoluminescence mechanisms in a-SiNx:H alloys prepared by reactive evaporation. Journal of Applied Physics 101:12.
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O.S. Panwar, Mohd. Alim Khan, B. Bhattacharjee, A.K. Pal, B.S. Satyanarayana, P.N. Dixit, R. Bhattacharyya & M.Y. Khan. (2006) Reflectance and photoluminescence spectra of as grown and hydrogen and nitrogen incorporated tetrahedral amorphous carbon films deposited using an S bend filtered cathodic vacuum arc process. Thin Solid Films 515:4, pages 1597-1606.
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M. Loulou, R. Gharbi, M.A. Fathallah, G. Ambrosone, U. Coscia, G. Abbate, A. Marino, S. Ferrero & E. Tresso. (2006) Structural, optical and electrical properties of helium diluted a-Si1−xCx:H films deposited by PECVD. Journal of Non-Crystalline Solids 352:9-20, pages 1388-1391.
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H. Kato & Y. Ohki. (2003) Structural Defects in Amorphous Silicon Oxynitride and Silicon Nitride. Defect and Diffusion Forum 218-220, pages 39-50.
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Hiromitsu Kato, Hidefumi Sato, Yoshimichi Ohki, Kwang Soo Seol & Takashi Noma. (2003) Similarities in the electrical conduction processes in hydrogenated amorphous silicon oxynitride and silicon nitride. Journal of Physics: Condensed Matter 15:13, pages 2197-2205.
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Hiromitsu Kato, Norihide Kashio, Yoshimichi Ohki, Kwang Soo Seol & Takashi Noma. (2003) Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films. Journal of Applied Physics 93:1, pages 239-244.
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Yan Wang, Ruifeng Yue & Litian Liu. (2002) Structural properties of hydrogenated amorphous silicon carbide alloys. Applied Surface Science 193:1-4, pages 138-143.
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J. Cui, Rusli, S. F. Yoon, M. B. Yu, K. Chew, J. Ahn, Q. Zhang, E. J. Teo, T. Osipowicz & F. Watt. (2001) Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition. Journal of Applied Physics 89:5, pages 2699-2705.
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F. Giorgis, C. Vinegoni & L. Pavesi. (2000) Optical absorption and photoluminescence properties of films deposited by plasma-enhanced CVD . Physical Review B 61:7, pages 4693-4698.
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F. Giorgis, C. F. Pirri, C. Vinegoni & L. Pavesi. (1999) Luminescence processes in amorphous hydrogenated silicon-nitride nanometric multilayers. Physical Review B 60:16, pages 11572-11576.
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K. J. Price, L. E. McNeil, A. Suvkanov, E. A. Irene, P. J. MacFarlane & M. E. Zvanut. (1999) Characterization of the luminescence center in photo- and electroluminescent amorphous silicon oxynitride films. Journal of Applied Physics 86:5, pages 2628-2637.
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J. Cui Rusli, S. F. Yoon, M. B. Yu, K. Chew, J. Ahn & Q. Zhang. (2011) Observation of Blue Emission from ECR-CVD Deposited Amorphous Hydrogenated Silicon Carbide. MRS Proceedings 593.
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F. Giorgis, C.F. Pirri, C. Vinegoni & L. Pavesi. (1998) Radiative emission properties of a-SiN:H based nanometric multilayers for light emitting devices. Journal of Luminescence 80:1-4, pages 423-427.
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S. Liu, S. Gangopadhyay, G. Sreenivas, S. S. Ang & H. A. Naseem. (1997) Photoluminescence studies of hydrogenated amorphous carbon and its alloys. Journal of Applied Physics 82:9, pages 4508-4514.
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Rusli, J. Robertson & G. A. J. Amaratunga. (1996) Photoluminescence behavior of hydrogenated amorphous carbon. Journal of Applied Physics 80:5, pages 2998-3003.
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T.-H. Wang & T.M. Searle. (1996) A rigid band model for recombination in a-Si alloys. Journal of Non-Crystalline Solids 198-200, pages 280-283.
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Leandro R. Tessler & Lucicleide R. Cirino. (2011) Time-Resolved Photoluminescence in a-Si 1-x C x :H . MRS Proceedings 420.
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H. Oheda. (1995) Photoluminescence mechanism in hydrogenated amorphous silicon studied by frequency-resolved spectroscopy. Physical Review B 52:23, pages 16530-16541.
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Leandro R. Tessler & Ionel Solomon. (1995) Photoluminescence of tetrahedrally coordinated a - :H . Physical Review B 52:15, pages 10962-10971.
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B. H. Augustine, E. A. Irene, Y. J. He, K. J. Price, L. E. McNeil, K. N. Christensen & D. M. Maher. (1995) Visible light emission from thin films containing Si, O, N, and H. Journal of Applied Physics 78:6, pages 4020-4030.
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Leandro R. Tessler & Ionel Solomon. (2011) Efficient Visible Room Temperature Photoluminescence in Wide Gap Hydrogenated Amorphous Silicon-Carbon Alloys. MRS Proceedings 336.
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C. Schmidt de Magalhães, C. Bittencourt, L.R. Tessler & F. Alvarez. (1993) Photoluminescence studies on silicon carbon alloys. Journal of Non-Crystalline Solids 164-166, pages 1027-1030.
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T.M. Searle, A. Dimba, T.-H. Wang, M. Sendova-Vassileva & F. Alvarez. (1993) The shape of the PL band in a-Si:H and its alloys of carbon and nitrogen. Journal of Non-Crystalline Solids 164-166, pages 615-618.
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C. Palsule, S. Gangopadhyay, D. Cronauer & B. Schröder. (1993) Photoluminescence characterization of a - :H alloys prepared by cosputtering . Physical Review B 48:15, pages 10804-10814.
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C Schmidt de Magalhaes, F Alvarez, M Sebastiani, P Fiorini, F Pozzili & F Evangelisti. (1993) Properties of amorphous silicon-carbon alloys with very low densities of states. Journal of Physics: Condensed Matter 5:33A, pages A329-A330.
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John Robertson. (2011) Electronic Structure of Defects in Amorphous Silicon Nitride. MRS Proceedings 284.
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William Pickin. (1989) Low-temperature photoluminescence spectrum of amorphous semiconductors. Physical Review B 40:17, pages 12030-12033.
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